LF412 - User Web Pages
... allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit. Exceeding the negative common-mode limit on either input will cause a reversal of the phase to the output and force the amplifier output to the corresponding high or low state. Excee ...
... allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit. Exceeding the negative common-mode limit on either input will cause a reversal of the phase to the output and force the amplifier output to the corresponding high or low state. Excee ...
Noise Modeling and SiGe Profile Design Tradeoffs for RF Applications
... straint of SiGe film stability. Next, we simulated the noise parameters for various SiGe profiles at constant film stability (integrated Ge content) to determine the optimum profiles for low noise. To produce sensible results, the 2-D device structure for the standard control SiGe HBT was first cali ...
... straint of SiGe film stability. Next, we simulated the noise parameters for various SiGe profiles at constant film stability (integrated Ge content) to determine the optimum profiles for low noise. To produce sensible results, the 2-D device structure for the standard control SiGe HBT was first cali ...
FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier F FB3904
... Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's ...
... Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's ...
PHE13003A 1. Product profile NPN power transistor
... Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible ...
... Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible ...
FFG3105UCX Datasheet
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
Switched Capacitor DC-DC Converters: Topologies and Applications
... • Clk=VDD, Clk_bar=0 • Maximum voltage stress on diodes 2VDD-Vt => reliability issue • Maximum voltage stress on capacitors VCn =n(VDD-Vt) => reliability issue ...
... • Clk=VDD, Clk_bar=0 • Maximum voltage stress on diodes 2VDD-Vt => reliability issue • Maximum voltage stress on capacitors VCn =n(VDD-Vt) => reliability issue ...
Evaluation Board User Guide UG-336
... ESD Caution ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions sho ...
... ESD Caution ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions sho ...
IXYS UK Westcode Limited Press-pack IGBT, towards the next
... Offers reduction in number of series devices for medium voltage applications ...
... Offers reduction in number of series devices for medium voltage applications ...
AP1507 150KHz, 3A PWM BUCK DC/DC CONVERTER Description
... The internal compensation makes the feedback control have good line and load regulation without an external design. Regarding the protected function, the thermal shutdown is to prevent over ...
... The internal compensation makes the feedback control have good line and load regulation without an external design. Regarding the protected function, the thermal shutdown is to prevent over ...
MAX8727 TFT-LCD Step-Up DC-DC Converter General Description Features
... The MAX8727 is a highly efficient power supply that employs a current-mode, fixed-frequency, pulse-width modulation (PWM) architecture for fast transient response and low-noise operation. The device regulates the output voltage through a combination of an error amplifier, two comparators, and severa ...
... The MAX8727 is a highly efficient power supply that employs a current-mode, fixed-frequency, pulse-width modulation (PWM) architecture for fast transient response and low-noise operation. The device regulates the output voltage through a combination of an error amplifier, two comparators, and severa ...
SPP07N60S5 SPI07N60S5 Cool MOS™ Power Transistor
... For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide ( ...
... For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide ( ...
- aes journals
... While the space vector controller is described in [6]. The ramp comparison controller is modeled on a computer in [3] and the delta controller discussed in [4]. This paper uses two criteria of current controllers to evaluate them as a function of operating conditions. The inverter transistor average ...
... While the space vector controller is described in [6]. The ramp comparison controller is modeled on a computer in [3] and the delta controller discussed in [4]. This paper uses two criteria of current controllers to evaluate them as a function of operating conditions. The inverter transistor average ...
Design Of A Current Controlled Defibrillator
... There are different ways of controlling the discharge in biphasic defibrillators. All methods described below are assumed to be biphasic, even if it is not mentioned, i.e. the current changes directions after about half the time of discharge. For a discharge, there are three main parameters that can ...
... There are different ways of controlling the discharge in biphasic defibrillators. All methods described below are assumed to be biphasic, even if it is not mentioned, i.e. the current changes directions after about half the time of discharge. For a discharge, there are three main parameters that can ...
LM2825 Integrated Power Supply 1A DC
... of 12V, an aluminum electrolytic capacitor (Panasonic HFQ series or Nichicon PL series or equivalent) with a voltage rating greater than 15V (1.25 × VIN) would be needed. Solid tantalum input capacitors should only be used where the input source is impedance current limited. High dV/dt applied at th ...
... of 12V, an aluminum electrolytic capacitor (Panasonic HFQ series or Nichicon PL series or equivalent) with a voltage rating greater than 15V (1.25 × VIN) would be needed. Solid tantalum input capacitors should only be used where the input source is impedance current limited. High dV/dt applied at th ...
ZXGD3101T8 Synchronous rectifier controller for flyback converters. Description
... RBIAS must then be 0.6 times the value of RREF to give a bias current, IBIAS, of 1.6 times IREF. This provides a recommended typical offset voltage of -20mV. External gate resistors are optional. They can be inserted to control the rise times which may help with EMI issues, power supply consumption ...
... RBIAS must then be 0.6 times the value of RREF to give a bias current, IBIAS, of 1.6 times IREF. This provides a recommended typical offset voltage of -20mV. External gate resistors are optional. They can be inserted to control the rise times which may help with EMI issues, power supply consumption ...
MAX15000/MAX15001 Current-Mode PWM Controllers with Programmable Switching Frequency General Description
... capacitor C1 (see Figure 1). During this initial period, while the voltage is less than the internal bootstrap UVLO threshold, the device typically consumes only 50µA of quiescent current. This low startup current and the large bootstrap UVLO hysteresis help to minimize the power dissipation across ...
... capacitor C1 (see Figure 1). During this initial period, while the voltage is less than the internal bootstrap UVLO threshold, the device typically consumes only 50µA of quiescent current. This low startup current and the large bootstrap UVLO hysteresis help to minimize the power dissipation across ...
SOLAR BEACH CHAIR
... The FET (Field Effect Transistor) is the major switching component of the buck converter. It will take an outside signal from the control circuitry and allow more or less current to flow through to the output depending on the output voltage. We will be using a NEXFET Power MOSFET, IRF540PbF. Accordi ...
... The FET (Field Effect Transistor) is the major switching component of the buck converter. It will take an outside signal from the control circuitry and allow more or less current to flow through to the output depending on the output voltage. We will be using a NEXFET Power MOSFET, IRF540PbF. Accordi ...
AN-9005 - Fairchild Semiconductor
... Power MOSFET technology has been developed towards higher cell density for lower on-resistance. There are, however, silicon limits for significant reduction in the onresistance with the conventional planar MOSFET technology because of its exponential increase in onresistance according to the increas ...
... Power MOSFET technology has been developed towards higher cell density for lower on-resistance. There are, however, silicon limits for significant reduction in the onresistance with the conventional planar MOSFET technology because of its exponential increase in onresistance according to the increas ...
Output Stages and Power Amplifiers
... Thermal considerations in the design and fabrication of highoutput power circuits. Oxford University Publishing Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033) ...
... Thermal considerations in the design and fabrication of highoutput power circuits. Oxford University Publishing Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033) ...
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... Figure 1.1: (a) Real MSCDN (b) Real filter reactors (c) Simplified single line of MSCDN (Kampa, 2012). ...
... Figure 1.1: (a) Real MSCDN (b) Real filter reactors (c) Simplified single line of MSCDN (Kampa, 2012). ...
Input-current-shaper based on a modified SEPIC
... constant on C1,a certain amount of capacitance should make up this capacitor. With respect to the hold-up capability, it is not indifferent where the capacitance is located. The total energy storage to be used in case of a line failure is now, for the Modified SEPIC converter with a bulk capacitor a ...
... constant on C1,a certain amount of capacitance should make up this capacitor. With respect to the hold-up capability, it is not indifferent where the capacitance is located. The total energy storage to be used in case of a line failure is now, for the Modified SEPIC converter with a bulk capacitor a ...
Effect and Utilization of Common Source Inductance in Synchronous
... Fig.7 (b) shows the simulation waveform of sync FET gate source voltage and power loss. It is clear that Cdv/dt could cause high power loss in power MOSFET without CSI. Simulation was performed with International Rectifier IRF6618 as sync FET. The power loss of a 1MHz, 12V to 1.2V converter is reduc ...
... Fig.7 (b) shows the simulation waveform of sync FET gate source voltage and power loss. It is clear that Cdv/dt could cause high power loss in power MOSFET without CSI. Simulation was performed with International Rectifier IRF6618 as sync FET. The power loss of a 1MHz, 12V to 1.2V converter is reduc ...
Introduction to Switched-Mode Power Supply (SMPS) circuits
... [Hint: VA ratng for a single phase transformer = 2.22 f BmaxAC AW δ KW , where f is supply frequency, Bmax is the peak flux density, AC : core area, AW : window area, δ : current density in copper and KW is the window utilization factor.] Answer: Volume (size) of Low frequency transformer will be 40 ...
... [Hint: VA ratng for a single phase transformer = 2.22 f BmaxAC AW δ KW , where f is supply frequency, Bmax is the peak flux density, AC : core area, AW : window area, δ : current density in copper and KW is the window utilization factor.] Answer: Volume (size) of Low frequency transformer will be 40 ...
FL7930B Single-Stage Flyback and Boundary-Mode PFC Controller for Lighting
... the amplifier. To cancel down the line input voltage effect on power factor correction, the effective control response of the PFC block should be slower than the line frequency and this conflicts with the transient response of the controller. Two-pole one-zero type compensation can meet both require ...
... the amplifier. To cancel down the line input voltage effect on power factor correction, the effective control response of the PFC block should be slower than the line frequency and this conflicts with the transient response of the controller. Two-pole one-zero type compensation can meet both require ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.