LMV710, LMV711, LMV715 (Rev. A)
... low power, low cost, and small size required by battery-powered portable electronics. These devices have an input common-mode voltage range that exceeds the rails, rail-to-rail output, and high output-current drive. The devices offer a bandwidth of 5 MHz and a slew rate of 5 V/µs. On the LMV711 and ...
... low power, low cost, and small size required by battery-powered portable electronics. These devices have an input common-mode voltage range that exceeds the rails, rail-to-rail output, and high output-current drive. The devices offer a bandwidth of 5 MHz and a slew rate of 5 V/µs. On the LMV711 and ...
Design of High Speed Low Power 15-4 Compressor
... Multiplication is the basic arithmetic operation in several microprocessors and digital signal processing applications. Digital Signal Processing systems require multipliers to implement DSP algorithms such as convolution and filtering where the multiplier lies directly within the critical path. Hen ...
... Multiplication is the basic arithmetic operation in several microprocessors and digital signal processing applications. Digital Signal Processing systems require multipliers to implement DSP algorithms such as convolution and filtering where the multiplier lies directly within the critical path. Hen ...
MAX8822 Ultra-Efficient Negative Charge-Pump LED General Description
... The MAX8822 drives up to four white light-emitting diodes (LEDs) with regulated constant current for display backlighting in cell phones, digital cameras, PDAs, and other handheld devices. By utilizing a proprietary negative 0.5x inverting charge pump and innovative independent low-dropout (LDO) ada ...
... The MAX8822 drives up to four white light-emitting diodes (LEDs) with regulated constant current for display backlighting in cell phones, digital cameras, PDAs, and other handheld devices. By utilizing a proprietary negative 0.5x inverting charge pump and innovative independent low-dropout (LDO) ada ...
Effective Drive Current in CMOS Inverters for Sub
... (IPEAK + IM + IL )/3 results in the best correlation between the analytical and HSPICE extracted Ieff , with a slope of 0.923 compared to the 0.841 slope of the two-point Ieff definition. In each case where IH is replaced with IPEAK, there is a noted improvement in correlation, with an overall 7.2% ...
... (IPEAK + IM + IL )/3 results in the best correlation between the analytical and HSPICE extracted Ieff , with a slope of 0.923 compared to the 0.841 slope of the two-point Ieff definition. In each case where IH is replaced with IPEAK, there is a noted improvement in correlation, with an overall 7.2% ...
A Power Converter for Photovoltaic Applications
... the same characteristics and are equally illuminated (i.e., identical iv-cures), they will behave as a single cell, but with a voltage N times higher and, therefore, N times the power of one cell. In reality, PV-cells cannot be produced identically and even if they could, they would not have identic ...
... the same characteristics and are equally illuminated (i.e., identical iv-cures), they will behave as a single cell, but with a voltage N times higher and, therefore, N times the power of one cell. In reality, PV-cells cannot be produced identically and even if they could, they would not have identic ...
Read the pdf
... SRAM cell have difficulty meeting the growing demand for a larger memory capacity in mobile applications [2]. Studies show that the power dissipated by the cell is usually a significant part of the total chip power [1]. Cell accesses consume a significant fraction (30-60%) of total power dissipation in ...
... SRAM cell have difficulty meeting the growing demand for a larger memory capacity in mobile applications [2]. Studies show that the power dissipated by the cell is usually a significant part of the total chip power [1]. Cell accesses consume a significant fraction (30-60%) of total power dissipation in ...
Datasheet
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
— mWSaver™ PWM Controller FAN6757 FAN 6
... The HV pin is typically connected to the AC line input through two external diodes and one resistor (R HV), as shown in Figure 24. When the AC line voltage is applied, the VDD hold-up capacitor is charged by the line voltage through the diodes and resistor. After VDD reaches the turn-on threshold vo ...
... The HV pin is typically connected to the AC line input through two external diodes and one resistor (R HV), as shown in Figure 24. When the AC line voltage is applied, the VDD hold-up capacitor is charged by the line voltage through the diodes and resistor. After VDD reaches the turn-on threshold vo ...
TLVx313 Low-Power, Rail-to-Rail In/Out, 500
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
Amplifiers Explained File
... Generally, large signal or power amplifiers are used in the output stages of audio amplifier systems to drive a loudspeaker load. A typical loudspeaker has an impedance of between 4Ω and 8Ω, thus a power amplifier must be able to supply the high peak currents required to drive the low impedance spea ...
... Generally, large signal or power amplifiers are used in the output stages of audio amplifier systems to drive a loudspeaker load. A typical loudspeaker has an impedance of between 4Ω and 8Ω, thus a power amplifier must be able to supply the high peak currents required to drive the low impedance spea ...
CHAPTER 6 Field Effect Transistors (FETs)
... to bias a JFET. R1 and R2 are used to keep the gate-source junction in reverse bias. Operation is no different from self-bias. Determining VGS for a JFET voltage-divider circuit with givenVD can be calculated with the formulas below. Source voltage,VS = IDRS Gate voltage, VG =(R2/R1+R2)VDD Gate-to-s ...
... to bias a JFET. R1 and R2 are used to keep the gate-source junction in reverse bias. Operation is no different from self-bias. Determining VGS for a JFET voltage-divider circuit with givenVD can be calculated with the formulas below. Source voltage,VS = IDRS Gate voltage, VG =(R2/R1+R2)VDD Gate-to-s ...
LT1010 - Fast ±150mA Power Buffer
... buffer comes into play at high frequencies. The precision unity-gain buffer above has a 10MHz bandwidth without capacitive loading, yet it is stable for all load capacitance to over 0.3µF, again determined by RFCF . 1010fe ...
... buffer comes into play at high frequencies. The precision unity-gain buffer above has a 10MHz bandwidth without capacitive loading, yet it is stable for all load capacitance to over 0.3µF, again determined by RFCF . 1010fe ...
MAX8739 TFT, LCD, DC-DC Converter with Operational Amplifiers General Description
... regulator and two high-current operational amplifiers for active-matrix thin-film transistor (TFT) liquid-crystal displays (LCDs). The input supply voltage range of the MAX8739 is from 1.8V to 5.5V. The device also includes a logic-controlled, high-voltage switch with adjustable delay. The step-up D ...
... regulator and two high-current operational amplifiers for active-matrix thin-film transistor (TFT) liquid-crystal displays (LCDs). The input supply voltage range of the MAX8739 is from 1.8V to 5.5V. The device also includes a logic-controlled, high-voltage switch with adjustable delay. The step-up D ...
An introduction to Inverters and Applications
... operate very much the same as a normal BJT. Power BJTs are used in power converters such as inverters as frequencies of up to 10 kHz. Power MOSFETs can operate at somewhat higher frequencies (a few to several tens of kHz), but are limited to power ratings, usually 1000 V, 50 A. Insulated-gate bipola ...
... operate very much the same as a normal BJT. Power BJTs are used in power converters such as inverters as frequencies of up to 10 kHz. Power MOSFETs can operate at somewhat higher frequencies (a few to several tens of kHz), but are limited to power ratings, usually 1000 V, 50 A. Insulated-gate bipola ...
Amplifier for Sensor Interfaces
... Sensors are all around us, employed in a multitude of applications like healthcare monitoring, weather and environment monitoring, agricultural sensing, automobiles, structural monitoring of buildings and many more. Science, engineering, medicine, even economics and commerce, depend on the measureme ...
... Sensors are all around us, employed in a multitude of applications like healthcare monitoring, weather and environment monitoring, agricultural sensing, automobiles, structural monitoring of buildings and many more. Science, engineering, medicine, even economics and commerce, depend on the measureme ...
An overview of power dissipation and control techniques
... scaling down, field oxide across the gate penetrates the electron from gate to substrate and vice versa. However, the increase of high electric field cause the electrons and holes gain sufficient energy to overcome the interface potential, hence it makes direct tunnelling current through transistor ...
... scaling down, field oxide across the gate penetrates the electron from gate to substrate and vice versa. However, the increase of high electric field cause the electrons and holes gain sufficient energy to overcome the interface potential, hence it makes direct tunnelling current through transistor ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... Over the past two decades, semi conductor industry emerged considerably and demand for VLSI has grown all over the world. During the recent years. there is a great demand for portable devices like cellular phone , palm top computers, GPRS receivers, pocket calculator, and pacemakers. They all demand ...
... Over the past two decades, semi conductor industry emerged considerably and demand for VLSI has grown all over the world. During the recent years. there is a great demand for portable devices like cellular phone , palm top computers, GPRS receivers, pocket calculator, and pacemakers. They all demand ...
AAT4616A 数据资料DataSheet下载
... The AAT4616A is a single channel current limiting load switch that is intended to protect against short circuit and over current events by current limiting to a preset level. This device also provides a reverse current blocking feature, ON/OFF enable control and a fault flag to notify a system contr ...
... The AAT4616A is a single channel current limiting load switch that is intended to protect against short circuit and over current events by current limiting to a preset level. This device also provides a reverse current blocking feature, ON/OFF enable control and a fault flag to notify a system contr ...
electronic circuits
... Amplifies I (= I- - I+) between the inputs. Q3 and D1 form a current mirror (ICQ3 ID1). In practice, two matched transistors are used; the 1st transistor connected as a diode. Current into base of Q1 IB1 = I. Note that VB 0.7 for both Q1 & Q2. ...
... Amplifies I (= I- - I+) between the inputs. Q3 and D1 form a current mirror (ICQ3 ID1). In practice, two matched transistors are used; the 1st transistor connected as a diode. Current into base of Q1 IB1 = I. Note that VB 0.7 for both Q1 & Q2. ...
MAX16914/MAX16915 Ideal Diode, Reverse-Battery, and Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
... must tolerate high-voltage transient and fault conditions. These conditions include load dumps, voltage dips, and reversed input voltages. The controllers monitor the input voltage on the supply line and control two external pFETs to isolate the load from the fault condition. The external pFETs are ...
... must tolerate high-voltage transient and fault conditions. These conditions include load dumps, voltage dips, and reversed input voltages. The controllers monitor the input voltage on the supply line and control two external pFETs to isolate the load from the fault condition. The external pFETs are ...
TPS2830 数据资料 dataSheet 下载
... The drivers are designed to deliver 2.4-A peak currents into large capacitive loads. The high-side driver can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control circuit eliminates shoot-through currents through the main power FETs during switc ...
... The drivers are designed to deliver 2.4-A peak currents into large capacitive loads. The high-side driver can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control circuit eliminates shoot-through currents through the main power FETs during switc ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.