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Investigation of External Electromagnetic Disturbance in
Investigation of External Electromagnetic Disturbance in

... SiO2 . If we assume typical electric field intensity E = 3.2 kV/m at ground level from 220 kV power transmission overhead line we get negligible change in refractive indices ∆n = 8.41 · 10−18 [9]. To get more notable interaction it is worth to assume much higher electric field intensity. Faraday eff ...
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Nitrogen-vacancy center



The nitrogen-vacancy center (N-V center) is one of numerous point defects in diamond. Its most explored and useful property is photoluminescence, which can be easily detected from an individual N-V center, especially those in the negative charge state (N-V−). Electron spins at N-V centers, localized at atomic scales, can be manipulated at room temperature by applying a magnetic field, electric field, microwave radiation or light, or a combination, resulting in sharp resonances in the intensity and wavelength of the photoluminescence. These resonances can be explained in terms of electron spin related phenomena such as quantum entanglement, spin-orbit interaction and Rabi oscillations, and analysed using advanced quantum optics theory. An individual N-V center can be viewed as a basic unit of a quantum computer, and it has potential applications in novel, more efficient fields of electronics and computational science including quantum cryptography and spintronics.
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