electric current
... • Flowing water at the top of a waterfall has both potential and kinetic energy. • However, the large amount of natural potential and kinetic energy available from resources such as Niagara Falls are of little use to people or manufacturers who are 100 km away, unless that energy can be transported ...
... • Flowing water at the top of a waterfall has both potential and kinetic energy. • However, the large amount of natural potential and kinetic energy available from resources such as Niagara Falls are of little use to people or manufacturers who are 100 km away, unless that energy can be transported ...
RE1L002SN
... Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no respo ...
... Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no respo ...
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel
... Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the devic ...
... Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the devic ...
Eine 100 Watt Endstufe
... in as little as five seconds as illustrated in Figure 8. Prolonged key-down transmissions should be avoided for this reason. Under intermittent CW conditions, the situation is very different. Transistor-case temperatures reached 66°C after operating four minutes under simulated CW conditions at 20 W ...
... in as little as five seconds as illustrated in Figure 8. Prolonged key-down transmissions should be avoided for this reason. Under intermittent CW conditions, the situation is very different. Transistor-case temperatures reached 66°C after operating four minutes under simulated CW conditions at 20 W ...
FAN3111 — Single 1A High-Speed, Low-Side Gate Driver
... 1. Estimates derived from thermal simulation; actual values depend on the application. 2. Theta_JL (ΘJL): Thermal resistance between the semiconductor junction and the bottom surface of all the leads (including any thermal pad) that are typically soldered to a PCB. 3. Theta_JT (ΘJT): Thermal resista ...
... 1. Estimates derived from thermal simulation; actual values depend on the application. 2. Theta_JL (ΘJL): Thermal resistance between the semiconductor junction and the bottom surface of all the leads (including any thermal pad) that are typically soldered to a PCB. 3. Theta_JT (ΘJT): Thermal resista ...
AP8801 500mA LED STEP-DOWN CONVERTER Description
... When a low frequency PWM signal with voltages between 2.5V and a low level of zero is applied to the CTRL pin the output current will be switched on and off at the PWM frequency. The resultant LED current ILEDavg will be proportional to the PWM duty cycle. See figure 18. A Pulse Width Modulated (PWM ...
... When a low frequency PWM signal with voltages between 2.5V and a low level of zero is applied to the CTRL pin the output current will be switched on and off at the PWM frequency. The resultant LED current ILEDavg will be proportional to the PWM duty cycle. See figure 18. A Pulse Width Modulated (PWM ...
A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology
... The parameter A represents the INL specification in the units of LSB, which is 0.5 for this design. The parameter N represents the number of bits resolution of the DAC. The INL yield requirement determines Z(Y), which is well tabulated in the literature and is derived via Monte Carlo simulations. An ...
... The parameter A represents the INL specification in the units of LSB, which is 0.5 for this design. The parameter N represents the number of bits resolution of the DAC. The INL yield requirement determines Z(Y), which is well tabulated in the literature and is derived via Monte Carlo simulations. An ...
A4988 - ICTP Scientific FabLab
... When stepping, if the new output levels of the DACs are lower than their previous output levels, then the decay mode for the active full-bridge is set to Mixed. If the new output levels of the DACs are higher than or equal to their previous levels, then the decay mode for the active full-bridge is s ...
... When stepping, if the new output levels of the DACs are lower than their previous output levels, then the decay mode for the active full-bridge is set to Mixed. If the new output levels of the DACs are higher than or equal to their previous levels, then the decay mode for the active full-bridge is s ...
FDPC8011S PowerTrench Power Clip
... and GND / GND(LSS) PAD to help reduce parasitic inductance and high frequency ringing. Several capacitors may be placed in parallel, and capacitors may be placed on both the top and bottom side of the board. The capacitor located immediately adjacent to the Power Clip will be the most effective at r ...
... and GND / GND(LSS) PAD to help reduce parasitic inductance and high frequency ringing. Several capacitors may be placed in parallel, and capacitors may be placed on both the top and bottom side of the board. The capacitor located immediately adjacent to the Power Clip will be the most effective at r ...
Voltage-Divider Bias Circuits
... The selection of a proper DC operating point or quiescent point, generally depends on the following factors: (a) The amplitude of the ac signal to be handled by the amplifier and distortion level in signal. Applying large ac voltages to the base would result in driving the collector current into s ...
... The selection of a proper DC operating point or quiescent point, generally depends on the following factors: (a) The amplitude of the ac signal to be handled by the amplifier and distortion level in signal. Applying large ac voltages to the base would result in driving the collector current into s ...
MAX15026 Low-Cost, Small, 4.5V to 28V Wide Operating General Description
... The MAX15026 synchronous step-down controller operates from a 4.5V to 28V input voltage range and generates an adjustable output voltage from 85% of the input voltage down to 0.6V while supporting loads up to 25A. As long as the device supply voltage is within 5.0V to 5.5V, the input power bus (VIN) ...
... The MAX15026 synchronous step-down controller operates from a 4.5V to 28V input voltage range and generates an adjustable output voltage from 85% of the input voltage down to 0.6V while supporting loads up to 25A. As long as the device supply voltage is within 5.0V to 5.5V, the input power bus (VIN) ...
Passivation of GaAs/AlGaAs heterojunction bipolar transistors by
... and a decrease of the minimum base injection current by a factor of 1.3–10 are demonstrated. In addition the offset voltage V off and the series resistance R s in the saturation region of the output characteristic are also decreased. It means that the overall dc characteristics of the HBTs are impro ...
... and a decrease of the minimum base injection current by a factor of 1.3–10 are demonstrated. In addition the offset voltage V off and the series resistance R s in the saturation region of the output characteristic are also decreased. It means that the overall dc characteristics of the HBTs are impro ...
FDML7610S PowerTrench Power Stage
... 1. Input ceramic bypass capacitors C1 and C2 must be placed close to the D1 and S2 pins of Power Stage to help reduce parasitic inductance and high frequency conduction loss induced by switching operation. C1 and C2 show the bypass capacitors placed close to the part between D1 and S2. Input capaci ...
... 1. Input ceramic bypass capacitors C1 and C2 must be placed close to the D1 and S2 pins of Power Stage to help reduce parasitic inductance and high frequency conduction loss induced by switching operation. C1 and C2 show the bypass capacitors placed close to the part between D1 and S2. Input capaci ...
BA4558YF-M
... Power dissipation (total loss) indicates the power that the IC can consume at Ta=25°C (normal temperature). As the IC consumes power, it heats up, causing its temperature to be higher than the ambient temperature. The allowable temperature that the IC can accept is limited. This depends on the circu ...
... Power dissipation (total loss) indicates the power that the IC can consume at Ta=25°C (normal temperature). As the IC consumes power, it heats up, causing its temperature to be higher than the ambient temperature. The allowable temperature that the IC can accept is limited. This depends on the circu ...
DMN65D8L Product Summary Features
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
AP1115 Description Pin Assignments
... VIN = 3.3V, VADJ = 0,0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 3V, 0mA < Io < 0.6A,TA = +25°C (Notes 4 & 5) VIN = 3.3V, 0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 4V, 0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 4.3V, 0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 5V, 0 ≤ IOUT ≤ 0.6A, ...
... VIN = 3.3V, VADJ = 0,0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 3V, 0mA < Io < 0.6A,TA = +25°C (Notes 4 & 5) VIN = 3.3V, 0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 4V, 0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 4.3V, 0mA < Io < 0.6A, TA = +25°C (Notes 4 & 5) VIN = 5V, 0 ≤ IOUT ≤ 0.6A, ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.