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estimating bond wire current-carrying capacity
estimating bond wire current-carrying capacity

... lengths in the 2- to 3-mm range or longer. A wire’s currentcarrying capability varies dramatically as conductor length changes, which the equation fails to consider. Given these limitations, a new approach is necessary that accounts for known geometry and material properties and on limitations typic ...
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SiC technology will meet the military`s future needs
SiC technology will meet the military`s future needs

... at these temperatures. Therefore, new packaging materials must be a backside electrical connection; therefore, non-conductive (or selected or developed. An important critical step in choosing packag- highly resistive) epoxies may be used as well as high-temperature ing materials is matching the coef ...
A Sub-1-V CMOS Bandgap using Forward Body Bias of the PMOS
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MAX8863T/S/R, MAX8864T/S/R Low-Dropout, 120mA Linear Regulators __________________General Description
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LF411 Low Offset Low Drift JFET Input Operational Amplifier
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... STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of Ameri ...
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Conference Paper - UCF EECS - University of Central Florida
Conference Paper - UCF EECS - University of Central Florida

... Silicon-based MOSFETs and particularly CMOS can function better at low temperatures as opposed to bipolar transistors. For low temperatures, enhancement mode CMOS integrated circuits are used because they are expected to give the best overall performance in high speed/high density electronic systems ...
DRV8801-Q1 DMOS Full-Bridge Motor Drivers
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top-40 multi-sensor heat and flame detector - Polon-Alfa

... Both sensors constitute a detection circuit sending information about fire factor sources subjected to analysis and evaluation of a fire hazard by the microprocessor controlling the detector. In an event the pre-set increase value or the fire hazard threshold is exceeded, the electronic system of the d ...
A CMOS Temperature-to-Frequency Converter With an Inaccuracy
A CMOS Temperature-to-Frequency Converter With an Inaccuracy

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Thermal runaway



Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.
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