MAX5976A/MAX5976B 2.7V to 18V, 7A, Hot-Swap Solution General Description Features
... capable of sinking up to 5mA when asserted. ...
... capable of sinking up to 5mA when asserted. ...
DE23640646
... advantages of two major prior approaches, the sleep transistor technique and the forced stack technique. However, unlike the sleep transistor technique, the stack keeper technique retains the original state; furthermore, unlike the forced stack technique, the stack keeper technique can utilize high- ...
... advantages of two major prior approaches, the sleep transistor technique and the forced stack technique. However, unlike the sleep transistor technique, the stack keeper technique retains the original state; furthermore, unlike the forced stack technique, the stack keeper technique can utilize high- ...
Efficiency of Electrostatic Air Moving Devices
... sink, thus rendering the efficiency comparison invalid. What matters is how much power can be cooled for a given energy input to the air moving device. The current study compares a small fan sink to the same heat sink with an integrated ionic device. An ionic air moving device is characterized by th ...
... sink, thus rendering the efficiency comparison invalid. What matters is how much power can be cooled for a given energy input to the air moving device. The current study compares a small fan sink to the same heat sink with an integrated ionic device. An ionic air moving device is characterized by th ...
"Super" Junction Transistors with Current Gains of 88 and Ultra-fast
... Silicon Carbide “Super” Junction Transistors (SJTs) are “Super-High” current gain SiC NPN BJTs currently developed by GeneSiC in 1200 V – 10 kV ratings. The SiC SJTs are Gateoxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operating area (RBSOA) and a slight ...
... Silicon Carbide “Super” Junction Transistors (SJTs) are “Super-High” current gain SiC NPN BJTs currently developed by GeneSiC in 1200 V – 10 kV ratings. The SiC SJTs are Gateoxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operating area (RBSOA) and a slight ...
A Broadband HF Amplifier using Low-Cost Power
... in as little as five seconds as illustrated in Figure 8. Prolonged key-down transmissions should be avoided for this reason. Under intermittent CW conditions, the situation is very different. Transistor-case temperatures reached 66°C after operating four minutes under simulated CW conditions at 20 W ...
... in as little as five seconds as illustrated in Figure 8. Prolonged key-down transmissions should be avoided for this reason. Under intermittent CW conditions, the situation is very different. Transistor-case temperatures reached 66°C after operating four minutes under simulated CW conditions at 20 W ...
CMOS analog integrated circuits based on weak inversion operations
... a total current drain of less than 1 flA is possible with a value of resistance R below 100 k~. In practice, this reference resist or can be realized as a strip of p-well. As in the previous circuit, ...
... a total current drain of less than 1 flA is possible with a value of resistance R below 100 k~. In practice, this reference resist or can be realized as a strip of p-well. As in the previous circuit, ...
Fast Defect Inspection and Classification of Patterned
... http://www.lycos.com/info/bipolar-junction-transistor--applications.html http://jimwarholic.com/uploaded_images/power-supply-768753.jpg ...
... http://www.lycos.com/info/bipolar-junction-transistor--applications.html http://jimwarholic.com/uploaded_images/power-supply-768753.jpg ...
BJT - Globarena
... Input characteristics for the CB configuration gives relation between the input quantities, input voltage VEB and input current IE for fixed VCB values The input circuit in CB configuration involves the emitter-base diode, which is forward biased in active region. Therefore, the relationship betwe ...
... Input characteristics for the CB configuration gives relation between the input quantities, input voltage VEB and input current IE for fixed VCB values The input circuit in CB configuration involves the emitter-base diode, which is forward biased in active region. Therefore, the relationship betwe ...
TLD1120EL Data Sheet - Infineon Technologies
... See also a typical application drawing in Chapter 8. ...
... See also a typical application drawing in Chapter 8. ...
SIGC54T65R3E
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
Impact of Temperature Fluctuations on Circuit Characteristics in
... CMOS technologies are posing greater challenges in the design of high performance integrated circuits. Variations can be categorized into die-to-die variations and within-die variations. Die-to-die fluctuations affect every element in an integrated circuit similarly. Alternatively, within-die variat ...
... CMOS technologies are posing greater challenges in the design of high performance integrated circuits. Variations can be categorized into die-to-die variations and within-die variations. Die-to-die fluctuations affect every element in an integrated circuit similarly. Alternatively, within-die variat ...
LM317 adj reg LDO.PDF
... prevent the capacitors from discharging through low current points into the regulator. Most 10 μF capacitors have low enough internal series resistance to deliver 20A spikes when shorted. Although the surge is short, there is enough energy to damage parts of the IC. When an output capacitor is conne ...
... prevent the capacitors from discharging through low current points into the regulator. Most 10 μF capacitors have low enough internal series resistance to deliver 20A spikes when shorted. Although the surge is short, there is enough energy to damage parts of the IC. When an output capacitor is conne ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.