S2000C
... Combination audible/visual appliances shall incorporate a Xenon flashtube enclosed in a rugged Lexan® lens or equivalent with solid state circuitry. Strobe shall produce a flash rate of one (1) flash per second minimum over the voltage range. The strobe intensity shall be rated per CAN/ULC-S525-99 f ...
... Combination audible/visual appliances shall incorporate a Xenon flashtube enclosed in a rugged Lexan® lens or equivalent with solid state circuitry. Strobe shall produce a flash rate of one (1) flash per second minimum over the voltage range. The strobe intensity shall be rated per CAN/ULC-S525-99 f ...
Single and Three Phase Overhead Transformer
... b) Coordinated itll protectiv e link, trips on an external short or overload before the link blows, and only if th e overload is large or continUous. c) If overload is small or temporary a load managcnlcnt light signals the need for change-out to a lal ;cr unit for more optiniiicd tlansforrncr' load ...
... b) Coordinated itll protectiv e link, trips on an external short or overload before the link blows, and only if th e overload is large or continUous. c) If overload is small or temporary a load managcnlcnt light signals the need for change-out to a lal ;cr unit for more optiniiicd tlansforrncr' load ...
Consideration of Operating Characteristics for Bi
... Moreover, the circuit operations of bi-direction mode are investigated in detail. From experimental results, it is confirmed that the voltage conversion characteristics are similar to analytical characteristics. From experimental waveforms, the soft-switching operation is confirmed. ...
... Moreover, the circuit operations of bi-direction mode are investigated in detail. From experimental results, it is confirmed that the voltage conversion characteristics are similar to analytical characteristics. From experimental waveforms, the soft-switching operation is confirmed. ...
AS Electricity Part I
... If each resistive strip is 2.5 mm wide and of length 0.80 m, determine the thickness of each strip. Resistivity of the resistive material = 5.0 × 10–5 Ωm. ...
... If each resistive strip is 2.5 mm wide and of length 0.80 m, determine the thickness of each strip. Resistivity of the resistive material = 5.0 × 10–5 Ωm. ...
Noise - ISY@LiU
... resistances in their base, emitter, and collector regions, all of which generate thermal noise. Moreover, they also suffer from “shot noise” associated with the transport of carriers across the baseemitter junction. • In low-noise bipolar circuits, the base resistance thermal noise and the collector ...
... resistances in their base, emitter, and collector regions, all of which generate thermal noise. Moreover, they also suffer from “shot noise” associated with the transport of carriers across the baseemitter junction. • In low-noise bipolar circuits, the base resistance thermal noise and the collector ...
Design Considerations for Correlation Radiometers
... The phase switching patterns in Figure 2 are low-order Walsh functions [15, ch. 7.5]. We experimented briefly with higher-order Walsh function switching sequences. These take higherorder derivatives of the input stream and should remove drifts and curvature as well as the constant term that the lowe ...
... The phase switching patterns in Figure 2 are low-order Walsh functions [15, ch. 7.5]. We experimented briefly with higher-order Walsh function switching sequences. These take higherorder derivatives of the input stream and should remove drifts and curvature as well as the constant term that the lowe ...
ADM6819 数据手册DataSheet 下载
... When the primary supply is above the desired threshold, the ADM6819/ADM6820 are designed to control the N-channel FET in the secondary power path to enable the secondary supply. The GATE pin is held low while both VCC1 and VCC2 are below the undervoltage threshold, ensuring that the FET is held off. ...
... When the primary supply is above the desired threshold, the ADM6819/ADM6820 are designed to control the N-channel FET in the secondary power path to enable the secondary supply. The GATE pin is held low while both VCC1 and VCC2 are below the undervoltage threshold, ensuring that the FET is held off. ...
Standard FSR Solutions - CSL-EP
... Figure 2, this saturation force is beyond 10 kg. The saturation point is more a function of pressure than force. The saturation pressure of a typical FSR is on the order of 100 to 200 psi. For the data shown in Figures 2, 3 and 4, the actual measured pressure range is 0 to 175 psi (0 to 22 lbs appli ...
... Figure 2, this saturation force is beyond 10 kg. The saturation point is more a function of pressure than force. The saturation pressure of a typical FSR is on the order of 100 to 200 psi. For the data shown in Figures 2, 3 and 4, the actual measured pressure range is 0 to 175 psi (0 to 22 lbs appli ...
BU406/406H/408 NPN Epitaxial Silicon Transistor BU406/406H/408 — NPN Epit axi
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
sn74lvcc3245a.pdf
... TI level-translation devices offer an opportunity for successful mixed-voltage signal design. A proper power-up sequence always should be followed to avoid excessive supply current, bus contention, oscillations, or other anomalies caused by improperly biased device pins. Take these precautions to gu ...
... TI level-translation devices offer an opportunity for successful mixed-voltage signal design. A proper power-up sequence always should be followed to avoid excessive supply current, bus contention, oscillations, or other anomalies caused by improperly biased device pins. Take these precautions to gu ...
STM 300 ENERGY STORAGE — Design Considerations
... devices usually have much lower leakage current than SMD alternatives. Their leakage current is typically specified after the first hundred hours charging time. This value tends to fall with time (after some charging weeks). Like electrolytic capacitors, all Supercaps age over time, meaning that the ...
... devices usually have much lower leakage current than SMD alternatives. Their leakage current is typically specified after the first hundred hours charging time. This value tends to fall with time (after some charging weeks). Like electrolytic capacitors, all Supercaps age over time, meaning that the ...
7-5 CurrentWatch™ Current Sensors ECS Series Current Switch
... The ECS can sense continuous currents from 1 to 150A and does not require any supply voltage, as the power required is induced from the monitored conductor. The output is a non-polarity-sensitive solid-state contact for switching AC and DC circuits up to 240V AC/DC. This switch also includes an LED ...
... The ECS can sense continuous currents from 1 to 150A and does not require any supply voltage, as the power required is induced from the monitored conductor. The output is a non-polarity-sensitive solid-state contact for switching AC and DC circuits up to 240V AC/DC. This switch also includes an LED ...
Primary Coil or Primary Winding
... • The power loss is converted to heat . The heat produced can be found by calculating the transformer efficiency. ...
... • The power loss is converted to heat . The heat produced can be found by calculating the transformer efficiency. ...
DS1250Y/AB 4096k Nonvolatile SRAM FEATURES PIN ASSIGNMENT
... 6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high-impedance state during this period. 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in high-impedance ...
... 6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high-impedance state during this period. 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in high-impedance ...
Resistive opto-isolator
Resistive opto-isolator (RO), also called photoresistive opto-isolator, vactrol (after a genericized trademark introduced by Vactec, Inc. in the 1960s), analog opto-isolator or lamp-coupled photocell, is an optoelectronic device consisting of a source and detector of light, which are optically coupled and electrically isolated from each other. The light source is usually a light-emitting diode (LED), a miniature incandescent lamp, or sometimes a neon lamp, whereas the detector is a semiconductor-based photoresistor made of cadmium selenide (CdSe) or cadmium sulfide (CdS). The source and detector are coupled through a transparent glue or through the air.Electrically, RO is a resistance controlled by the current flowing through the light source. In the dark state, the resistance typically exceeds a few MOhm; when illuminated, it decreases as the inverse of the light intensity. In contrast to the photodiode and phototransistor, the photoresistor can operate in both the AC and DC circuits and have a voltage of several hundred volts across it. The harmonic distortions of the output current by the RO are typically within 0.1% at voltages below 0.5 V.RO is the first and the slowest opto-isolator: its switching time exceeds 1 ms, and for the lamp-based models can reach hundreds of milliseconds. Parasitic capacitance limits the frequency range of the photoresistor by ultrasonic frequencies. Cadmium-based photoresistors exhibit a ""memory effect"": their resistance depends on the illumination history; it also drifts during the illumination and stabilizes within hours, or even weeks for high-sensitivity models. Heating induces irreversible degradation of ROs, whereas cooling to below −25 °C dramatically increases the response time. Therefore, ROs were mostly replaced in the 1970s by the faster and more stable photodiodes and photoresistors. ROs are still used in some sound equipment, guitar amplifiers and analog synthesizers owing to their good electrical isolation, low signal distortion and ease of circuit design.