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MAX3222E 数据资料 dataSheet 下载
MAX3222E 数据资料 dataSheet 下载

... http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requ ...
a PDF (large) - Boston Electronics Corporation
a PDF (large) - Boston Electronics Corporation

TPS62260-Q1 数据资料 dataSheet 下载
TPS62260-Q1 数据资料 dataSheet 下载

... With an wide input voltage range of 2 V to 6 V, the device supports applications powered by Li-Ion batteries with extended voltage range, two and three cell alkaline batteries, 3.3-V and 5-V input voltage rails. The TPS6226x operates at 2.25-MHz fixed switching frequency and enters Power Save Mode o ...
MAX16054 On/Off Controller with Debounce and ±15kV ESD Protection General Description
MAX16054 On/Off Controller with Debounce and ±15kV ESD Protection General Description

... output does not change state from high-to-low or lowto-high until the input is stable for at least 50ms (typ). The Functional Diagram shows the functional blocks consisting of an on-chip oscillator, counter, exclusiveNOR gate, a D flip-flop, and a T (toggle) flip-flop. When the pushbutton input does ...
SEL-351 Distribution and Transmission Relay Standard Features
SEL-351 Distribution and Transmission Relay Standard Features

... ➤ Distributed Network Protocol (DNP3) with point mapping. ➤ MIRRORED BITS® relay-to-relay communications. ➤ Integration Package, providing system-wide Sequential Events Recorder (SER) capabilities, expanded front-panel control and display functionality, and expanded control logic. ➤ Programmable Loa ...
IXYS UK Westcode Limited Press-pack IGBT, towards the next
IXYS UK Westcode Limited Press-pack IGBT, towards the next

... • 110mm device rated at 900A with integrated diode, 1375A all IGBT  Future product with 132mm electrode in development • All IGBT device with current rating of 1890A  Offers reduction in number of series devices for medium voltage applications ...
TBS. Surge protection systems/Measurement and
TBS. Surge protection systems/Measurement and

... Lightning barriers VF and VF-FS are used as precision protection devices in power supplies for computer installations, modems, ripple control installations, etc., to protect them from surges that may be caused by atmospheric discharges (storms) or switching operations. The built-in protection circui ...
[a irztegrating`
[a irztegrating`

Si4770/77-A20 - Silicon Labs
Si4770/77-A20 - Silicon Labs

... 9. RDS Synchronization Persistence is the minimum RF level at which the tuner loses synchronization to the RDS PI code as the RF level decreases from high to low levels. 10. RDS Synchronization Stability is the minimum RF level at which the tuner achieves synchronization to the RDS PI code as the RF ...
Model test (sem-II)
Model test (sem-II)

TJA 1050 CAN High-Speed Transceiver
TJA 1050 CAN High-Speed Transceiver

10-bit, 125 MS/s, 40 mW Pipelined ADC in 0.18 μm CMOS
10-bit, 125 MS/s, 40 mW Pipelined ADC in 0.18 μm CMOS

... switches and capacitors in the FADAC are comparable to those of the conventional front-end circuit. Therefore, compared to the conventional pipelined ADC, the area of the ADC is not increased by using the FADAC. Table 1 summarizes the performance of the ADC measured at a sampling rate of fs = 125 MS ...
A 23--24 GHz Low Power Frequency Synthesizer in 0.25
A 23--24 GHz Low Power Frequency Synthesizer in 0.25

09-02-2010 Dept of Aeronautical Engineering SMM Rahman MIST
09-02-2010 Dept of Aeronautical Engineering SMM Rahman MIST

... To further describe the phase relationship between two sine waves, the terms Lead and Lag are used. The amount by which one sine wave leads or lags another sine wave is measured in degrees. The positive maximum of the leading quantity occurs before the positive maximum of the lagging quantity ...
The Physics of Implantable Devices
The Physics of Implantable Devices

Self-Bias Configuration
Self-Bias Configuration

... FET’s (Field – Effect Transistors) are much like BJT’s (Bipolar Junction Transistors). FET is usually called a unipolar transistor being that the current carrier is wholly of a single type either electron or holes only. While the bipolar transistor is a dual current carrier system having both electr ...
Silicon Menagerie - Biomechatronics | MIT Media Lab
Silicon Menagerie - Biomechatronics | MIT Media Lab

Time - Weebly
Time - Weebly

Distribution Systems, Substations, and Integration of Distributed
Distribution Systems, Substations, and Integration of Distributed

Handout 3 - Engineering Class s
Handout 3 - Engineering Class s

M5100-EX Instructions
M5100-EX Instructions

... (brownouts). These unsafe conditions pose a very dangerous threat to all electronic equipment within the home. If the MAX® 5100-EX senses an unsafe power condition, it will automatically disconnect your equipment from the power to protect equipment from damage. Once the voltage returns to a safe lev ...
Industrial Registers
Industrial Registers

Process-independent resistor temperature
Process-independent resistor temperature

Signal Generators
Signal Generators

... www.electronics.dit.ie ...
MAX11040K,11060 - Maxim Integrated
MAX11040K,11060 - Maxim Integrated

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Resistive opto-isolator



Resistive opto-isolator (RO), also called photoresistive opto-isolator, vactrol (after a genericized trademark introduced by Vactec, Inc. in the 1960s), analog opto-isolator or lamp-coupled photocell, is an optoelectronic device consisting of a source and detector of light, which are optically coupled and electrically isolated from each other. The light source is usually a light-emitting diode (LED), a miniature incandescent lamp, or sometimes a neon lamp, whereas the detector is a semiconductor-based photoresistor made of cadmium selenide (CdSe) or cadmium sulfide (CdS). The source and detector are coupled through a transparent glue or through the air.Electrically, RO is a resistance controlled by the current flowing through the light source. In the dark state, the resistance typically exceeds a few MOhm; when illuminated, it decreases as the inverse of the light intensity. In contrast to the photodiode and phototransistor, the photoresistor can operate in both the AC and DC circuits and have a voltage of several hundred volts across it. The harmonic distortions of the output current by the RO are typically within 0.1% at voltages below 0.5 V.RO is the first and the slowest opto-isolator: its switching time exceeds 1 ms, and for the lamp-based models can reach hundreds of milliseconds. Parasitic capacitance limits the frequency range of the photoresistor by ultrasonic frequencies. Cadmium-based photoresistors exhibit a ""memory effect"": their resistance depends on the illumination history; it also drifts during the illumination and stabilizes within hours, or even weeks for high-sensitivity models. Heating induces irreversible degradation of ROs, whereas cooling to below −25 °C dramatically increases the response time. Therefore, ROs were mostly replaced in the 1970s by the faster and more stable photodiodes and photoresistors. ROs are still used in some sound equipment, guitar amplifiers and analog synthesizers owing to their good electrical isolation, low signal distortion and ease of circuit design.
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