SICAM-Q200
... monitoring and recording with magnitude and time stamp (duration) Rapid voltage changes (RVC) Limit value violations Waveform capture of triggered events of voltage and current. Up to 10 seconds records must be possible. ...
... monitoring and recording with magnitude and time stamp (duration) Rapid voltage changes (RVC) Limit value violations Waveform capture of triggered events of voltage and current. Up to 10 seconds records must be possible. ...
Uttar Pradesh Power Corporation Limited Subject
... A 220 V single phase meter has a constant load current of 5A passing through it for 2Hr, at unity power factor. If the meter disc makes 1056 revolutions during this period, what is the meter constant in revolution / kWh? ...
... A 220 V single phase meter has a constant load current of 5A passing through it for 2Hr, at unity power factor. If the meter disc makes 1056 revolutions during this period, what is the meter constant in revolution / kWh? ...
SET2011, 10th International Conference on Sustainable Energy
... the production of electricity, in this context, Photovoltaic systems are the most resources used in the world wide (solar electric power systems has grown gradually from last (10-15) years) [1]. In photovoltaic field, the solar cell allows to obtaining the electricity directly by converting sunlight ...
... the production of electricity, in this context, Photovoltaic systems are the most resources used in the world wide (solar electric power systems has grown gradually from last (10-15) years) [1]. In photovoltaic field, the solar cell allows to obtaining the electricity directly by converting sunlight ...
IXYS publish a new MOSFET brochure (Mar 2014) - H
... The drain current of a depletion-mode Power MOSFET flows when its gate terminal is at zero volt, and hence the name ‘normally-on.’ A negative bias voltage is required to turn the device off, reducing the current to micro amperes. These devices, therefore, need only simple biasing schemes. And with a h ...
... The drain current of a depletion-mode Power MOSFET flows when its gate terminal is at zero volt, and hence the name ‘normally-on.’ A negative bias voltage is required to turn the device off, reducing the current to micro amperes. These devices, therefore, need only simple biasing schemes. And with a h ...
Lecture no 16 & 17
... Complementary symmetry circuits A more practical version of a push-pull circuit using complementary transistors is shown to the right This circuit uses to complementary Darlington pair transistors to achieve larger current driving and lower output impedance Complementary-symmetry push-pull circuit ...
... Complementary symmetry circuits A more practical version of a push-pull circuit using complementary transistors is shown to the right This circuit uses to complementary Darlington pair transistors to achieve larger current driving and lower output impedance Complementary-symmetry push-pull circuit ...
Low-power LVDS for digital readout circuits
... 1.4 Gbps. In 0.18 micron, LVDS driver designed by Lu et al.[4] consumes 4.4 mW at the data rate of 1.25 Gbps with a single-end output swing of 203-288 mV. This driver possesses a 1.8 V supply voltage and can go up to 4.25 Gbps and it is an all-digital LVDS driver. Another work in the literature in ...
... 1.4 Gbps. In 0.18 micron, LVDS driver designed by Lu et al.[4] consumes 4.4 mW at the data rate of 1.25 Gbps with a single-end output swing of 203-288 mV. This driver possesses a 1.8 V supply voltage and can go up to 4.25 Gbps and it is an all-digital LVDS driver. Another work in the literature in ...
Bip Transistor 100V, 4A NPN TP/TP-FA
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
... Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos ...
Media - UVA ECE Wiki
... to the increasingly small scale at which devices are manufactured), many issues can be anticipated with MC analysis. The question arises, how we can use MC simulations at a variety of process corners and temperatures to most effectively test our circuit for variations post-Si. This project focuses o ...
... to the increasingly small scale at which devices are manufactured), many issues can be anticipated with MC analysis. The question arises, how we can use MC simulations at a variety of process corners and temperatures to most effectively test our circuit for variations post-Si. This project focuses o ...
Fully integrated power supply
... This function allows to minimize power losses related to switching frequency, which represent the majority of losses in a lightly loaded flyback, without giving up the advantages of a higher switching frequency at heavy load. The Standby function is realized by monitoring the peak current in the pow ...
... This function allows to minimize power losses related to switching frequency, which represent the majority of losses in a lightly loaded flyback, without giving up the advantages of a higher switching frequency at heavy load. The Standby function is realized by monitoring the peak current in the pow ...
npn pnp - Portland State University
... the resistance R1 and R2). transistor). If high amplifications are required, several small-signal amplifiers can be cascaded in series. In this laboratory session we will construct and analyze just one small-signal amplifier stage. A small-signal amplifiers must have: a dc bias circuit for placing ...
... the resistance R1 and R2). transistor). If high amplifications are required, several small-signal amplifiers can be cascaded in series. In this laboratory session we will construct and analyze just one small-signal amplifier stage. A small-signal amplifiers must have: a dc bias circuit for placing ...
An Integrated Picosecond Pulse Generation Circuit
... transmission line and on the charging voltage applied to the transmission line. Additional components can be provided on the common semiconductor substrate or chip to shape the input pulse to the switching device to ensure a fast rise time. Applications: High-speed analog-to-digital converters (AD ...
... transmission line and on the charging voltage applied to the transmission line. Additional components can be provided on the common semiconductor substrate or chip to shape the input pulse to the switching device to ensure a fast rise time. Applications: High-speed analog-to-digital converters (AD ...
NCP58300 - Very Low Dropout Fast Transient
... The NCP58300 series are high precision, very low dropout (VLDO), low ground current positive voltage regulators that are capable of providing an output current in excess of 3.0 A with a typical dropout voltage lower than 370 mV at 3.0 A load current. The devices are stable with tantalum output capac ...
... The NCP58300 series are high precision, very low dropout (VLDO), low ground current positive voltage regulators that are capable of providing an output current in excess of 3.0 A with a typical dropout voltage lower than 370 mV at 3.0 A load current. The devices are stable with tantalum output capac ...
Lecture 6. 555 Timer
... threshold voltage, is > 2/3(VCC), the output at pin 3, v3, is low, that is pin 3 is at zero volts. At the same time an internally connected switch transistor that is connected between the discharge, pin 7, and ground, pin 1, is turned ON. With the discharge transistor reducing the voltage at pin 6 t ...
... threshold voltage, is > 2/3(VCC), the output at pin 3, v3, is low, that is pin 3 is at zero volts. At the same time an internally connected switch transistor that is connected between the discharge, pin 7, and ground, pin 1, is turned ON. With the discharge transistor reducing the voltage at pin 6 t ...
Resistive opto-isolator
Resistive opto-isolator (RO), also called photoresistive opto-isolator, vactrol (after a genericized trademark introduced by Vactec, Inc. in the 1960s), analog opto-isolator or lamp-coupled photocell, is an optoelectronic device consisting of a source and detector of light, which are optically coupled and electrically isolated from each other. The light source is usually a light-emitting diode (LED), a miniature incandescent lamp, or sometimes a neon lamp, whereas the detector is a semiconductor-based photoresistor made of cadmium selenide (CdSe) or cadmium sulfide (CdS). The source and detector are coupled through a transparent glue or through the air.Electrically, RO is a resistance controlled by the current flowing through the light source. In the dark state, the resistance typically exceeds a few MOhm; when illuminated, it decreases as the inverse of the light intensity. In contrast to the photodiode and phototransistor, the photoresistor can operate in both the AC and DC circuits and have a voltage of several hundred volts across it. The harmonic distortions of the output current by the RO are typically within 0.1% at voltages below 0.5 V.RO is the first and the slowest opto-isolator: its switching time exceeds 1 ms, and for the lamp-based models can reach hundreds of milliseconds. Parasitic capacitance limits the frequency range of the photoresistor by ultrasonic frequencies. Cadmium-based photoresistors exhibit a ""memory effect"": their resistance depends on the illumination history; it also drifts during the illumination and stabilizes within hours, or even weeks for high-sensitivity models. Heating induces irreversible degradation of ROs, whereas cooling to below −25 °C dramatically increases the response time. Therefore, ROs were mostly replaced in the 1970s by the faster and more stable photodiodes and photoresistors. ROs are still used in some sound equipment, guitar amplifiers and analog synthesizers owing to their good electrical isolation, low signal distortion and ease of circuit design.