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Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits
Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits

... a high voltage (790 mV) and receive a high voltage signal D as an input. This delay element does not affect the delay of the proposed level shifter, since the delay element is within the feedback loop that sets up the circuit for the next transition. The MUXs are based on two sets of pass gates, as ...
BD6966NUX
BD6966NUX

Thevenin Equivalent Circuits
Thevenin Equivalent Circuits

... To determine the value of the Thevenin resistance, Rth, first replace the 24 V voltage source by a 0 V voltage source, i.e. a short circuit. Next, connect a current source circuit across the terminals of the circuit and then label the voltage across that current source as shown in Figure 14. The The ...
NCP177 - Linear Voltage Regulator Fast Transient Response 500
NCP177 - Linear Voltage Regulator Fast Transient Response 500

... response and high frequency PSRR. Only ceramic capacitors are recommended, the other types like tantalum capacitors not due to their large ESR. ...
MOS Charge Pumps for Low-Voltage Operation - Solid
MOS Charge Pumps for Low-Voltage Operation - Solid

phys1442-summer13-061813
phys1442-summer13-061813

IDT23S08T - Integrated Device Technology
IDT23S08T - Integrated Device Technology

BDTIC www.BDTIC.com/infineon Power Management & Supply Datasheet, Version 2.0, 04 July 2011
BDTIC www.BDTIC.com/infineon Power Management & Supply Datasheet, Version 2.0, 04 July 2011

... of phase. To guarantee the zero-voltage-switching and safe operation in half-bridge topologies, a fixed dead time of 380ns is inserted in each internal when one switch is turned off and the other is turned on. For LLC resonant half-bridge converter, the output voltage is regulated by changing the sw ...
Paper Title (use style: paper title)
Paper Title (use style: paper title)

... of MAX (maximum). For example, in fig. 2 is illustrated a basic CMOS fuzzy logic gate of MAX. Because the diode D stops the reverse (or negative) current, the output current Io, which is the bounded-difference operation, is: I 2  I 1 if I 2  I 1 ...
TLV7256 数据资料 dataSheet 下载
TLV7256 数据资料 dataSheet 下载

... mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associ ...
ir = -r
ir = -r

TPS61130 数据资料 dataSheet 下载
TPS61130 数据资料 dataSheet 下载

... The converter can be disabled to minimize battery drain. During shutdown, the load is completely disconnected from the battery. A low-EMI mode is implemented to reduce ringing, and in effect, lower radiated electromagnetic energy when the converter enters the discontinuous conduction mode. A power g ...
FXMA108 Dual-Supply, 8-Bit Signal Translator with Configurable
FXMA108 Dual-Supply, 8-Bit Signal Translator with Configurable

... translator designed for both uni-directional and bidirectional voltage translation between two logic levels. The device allows translation between voltages as high as 5.5V to as low as 1.65V. The A port tracks the VCCA level and the B port tracks the VCCB level. This allows for bi-directional voltag ...
SMP04
SMP04

... The buffer offset specification is ±10 mV; this is less than 1/2 LSB of an 8-bit DAC with 10 V full scale. Change in offset over the output range is typically 3 mV. The hold step is the magnitude of the voltage step caused when switching from sample-to-hold mode. This error is sometimes referred to ...
Class-AB Amplifier
Class-AB Amplifier

Modeling of Charge Transport in Ion Bipolar Junction Transistors
Modeling of Charge Transport in Ion Bipolar Junction Transistors

... diodes are in reverse bias the transistor operates in the cutoff mode. Second, if the E-B diode is in forward bias but the C-B diode is in reverse bias the transistor is in active mode. Thirdly, when the base current is elevated so that the charge carrier concentration at the collector is non-zero, ...
General Description Features
General Description Features

... This device utilizes average-current-mode control that enables optimal use of MOSFETs with optimal charge and on-resistance characteristics. This results in the minimized need for external heatsinking even when delivering up to 30A of LED current. True differential sensing enables accurate control o ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-ISSN: 2278-1676,p-ISSN: 2320-3331,
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-ISSN: 2278-1676,p-ISSN: 2320-3331,

Resistance - Teaching Advanced Physics
Resistance - Teaching Advanced Physics

... demonstrated this by generating a straight line graph that passes through the origin: if I is directly proportional to V (or the other way around) then Ohm’s law is obeyed. Any conductor (metallic or otherwise) that behaves in this way is described as an ‘ohmic conductor’. It might well be worth spe ...
Different Types of Starters for Induction Motor
Different Types of Starters for Induction Motor

... starting torque, being proportional to the square of the input current to IM in two cases, with and without auto-transformer (i.e. direct), is also reduced by x 2 , as the ratio of the two currents is x , same as that (ratio) of the voltages applied to the motor as shown earlier. So, the starting to ...
µA723C, µA723M, µA723Y PRECISION VOLTAGE REGULATORS
µA723C, µA723M, µA723Y PRECISION VOLTAGE REGULATORS

... Operating free-air temperature range, TA: µA723C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C µA723M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . ...
NTE74HCT00 Integrated Circuit TTL − High Speed CMOS, Quad 2
NTE74HCT00 Integrated Circuit TTL − High Speed CMOS, Quad 2

... The NTE74HCT00 is a NAND gate in a 14−Lead plastic DIP type package fabricated using advanced silicon−gate CMOS technology which provides the inherent benefits of CMOS − low quiescent power and wide power supply range. This device is input and output characteristic and pinout compatible with standar ...
Rated Speed
Rated Speed

TPS54900 数据资料 dataSheet 下载
TPS54900 数据资料 dataSheet 下载

... The reference system consists of a band-gap circuit, four digital to analog converter outputs (DACs), and smoothing filters. The reference system provides independent set-point voltages to the PWM control loops of each channel, and are programmed via the 4-wire serial port. Output control of the reg ...
Current and voltage in electrical circuits
Current and voltage in electrical circuits

... Cells and circuits You should know what happens to the potential difference and current when the number of cells in a circuit is changed. Potential difference A typical cell produces a potential difference of 1.5 V. When two or more cells are connected in series in a circuit, the total potential dif ...
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Current mirror

A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current being 'copied' can be, and sometimes is, a varying signal current. Conceptually, an ideal current mirror is simply an ideal inverting current amplifier that reverses the current direction as well or it is a current-controlled current source (CCCS). The current mirror is used to provide bias currents and active loads to circuits. It can also be used to model a more realistic current source (since ideal current sources don't exist).The circuit topology covered here is one that appears in many monolithic ICs. It is a Widlar mirror without an emitter degeneration resistor in the follower (output) transistor. This topology can only be done in an IC as the matching has to be extremely close and cannot be achieved with discretes.Another topology is the Wilson mirror. The Wilson mirror solves the Early effect voltage problem in his design.
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