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Transcript
NTE74HCT00
Integrated Circuit
TTL − High Speed CMOS,
Quad 2−Input NAND Gate
Description:
The NTE74HCT00 is a NAND gate in a 14−Lead plastic DIP type package fabricated using advanced
silicon−gate CMOS technology which provides the inherent benefits of CMOS − low quiescent power
and wide power supply range. This device is input and output characteristic and pinout compatible
with standard NTE74LS logic families. All inputs are protected from static discharge damage by internal diodes to VCC and ground.
The NTE74HCT00 is intended to interface between TTL and NMOS components and standard
CMOS devices. This device is also a plug−in replacement for LS−TTL devices and can be used to
reduce power consumption in existing designs.
Absolute Maximum Ratings: (Note 1, Note 2)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to +7.0V
DC Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −1.5 to VCC +1.5V
DC Output Voltage, VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VCC + 0.5V
Clamp Diode Current, IIK, IOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA
DC Output Current (Per Pin), IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25mA
DC VCC or GND Current (Per Pin), ICC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50mA
Power Dissipation (Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may
not function or be operable above the Recommended Operating Conditions and stressing the
parts to these levels is not recommended. In addition, extended exposure to stresses above
the Recommended Operating Conditions may effect device reliability. The Absolute Maximum
Ratings are stress ratings only.
Note 2. Unless otherwise specified, all voltages are referenced to GND.
Note 3. Power Dissipation temperature derating: 12mW/°C from +65°C to +85°C.
Recommended Operating Conditions:
Parameter
Symbol
Min
Typ
Max
Unit
VCC
4.5
−
5.5
V
VIN, VOUT
0
−
VCC
V
Operating Temperature Range
TA
−40
−
+85
°C
Input Rise or Fall Times
tr, tf
−
−
500
ns
Supply Voltage
DC Input or Output Voltage
DC Electrical Characteristics: (VCC = 5V ±10% unless otherwise specified)
TA = +25°C
Parameter
Symbol
Test Conditions
Typ
TA = −40° to +85°C
Guaranteed Limits
Unit
Minimum High Level Input Voltage
VIH
−
2.0
2.0
V
Maximum Low Level Input Voltage
VIL
−
0.8
0.8
V
Minimum High Level Output Voltage
VOH
VCC −0.1
V
Minimum Low Level Output Voltage
VOL
VIN = VIH
or VIL
VIN = VIH
|IOUT| = 20μA
VCC VCC −0.1
|IOUT| = 4.0mA, VCC = 4.5V
4.2
3.98
3.84
V
|IOUT| = 4.8mA, VCC = 5.5V
5.2
4.98
4.84
V
0
0.1
0.1
V
|IOUT| = 4.0mA, VCC = 4.5V
0.2
0.26
0.33
V
|IOUT| = 4.8mA, VCC = 5.5V
0.2
0.26
0.33
V
|IOUT| = 20μA
Maximum Input Current
IIN
VIN = VCC or GND, VIH or VIL
−
±0.05
±10.5
μA
Maximum Quiescent Supply Current
ICC
VIN = VCC or GND, IOUT = 0μA
−
1.0
10
μA
0.18
0.3
0.4
mA
VIN = 2.4V or 0.5V, Note 4
Note 4. This is measured per input with all other inputs held at VCC or GND.
AC Electrical Characteristics: (VCC = 5V, tr = tf = 6ns, CL = 15pF, TA = +25°C unless otherwise
specified)
Parameter
Maximum Propagation Delay
Symbol
Test Conditions
tPLH, tPHL
Typ
Guaranteed Limits
Unit
14
18
ns
AC Electrical Characteristics: (VCC = 5V ±10%, tr = tf = 6ns, CL = 50pF unless otherwise
specified)
TA = +25°C
Parameter
Symbol
Test Conditions
Typ
TA = −40° to +85°C
Guaranteed Limits
Unit
Maximum Propagation Delay
tPLH, tPHL
18
23
29
ns
Maximum Output Rise and Fall Time
tTHL, tTLH
8
15
19
ns
30
−
−
pF
5
10
10
pF
Power Dissipation Capacitance
CPD
Input Capacitance
CIN
Note 5
Note 5. CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC, and
the no load dynamic current consumption, IS = CPD VCC f + ICC.
Logic Diagram
(1 of 4 Gates)
Pin Connection Diagram
1A 1
14 VCC
1B 2
1Y 3
13 4B
12 4A
2A 4
11 4Y
2B 5
10 3B
2Y 6
9 3A
GND 7
8 3Y
14
8
1
7
.300
(7.62)
.770 (19.56)
Max
.200 (5.08)
Max
.100 (2.45)
.600 (15.24)
.125 (3.17) Min