IOSR Journal of Applied Physics (IOSR-JAP) e-ISSN: 2278-4861.
... Nonlinear optical (NLO) frequency conversion materials have a significant impact on laser technology, optical communication and optical storage technology. Ammonium dihydrogen phosphate (ADP) is a potential inorganic material having wide range of applications such as electro-optic modulator, harmoni ...
... Nonlinear optical (NLO) frequency conversion materials have a significant impact on laser technology, optical communication and optical storage technology. Ammonium dihydrogen phosphate (ADP) is a potential inorganic material having wide range of applications such as electro-optic modulator, harmoni ...
Anomalous Electron Transport in Field-Effect
... and thermal [4-7] properties motivated research of other quasi two-dimensional (2-D) materials. We have recently exfoliated quintuples – five atomic layers – of bismuth telluride (Bi2Te3) and related materials, which reveal thermoelectric and topological insulator properties [8-11]. It was shown tha ...
... and thermal [4-7] properties motivated research of other quasi two-dimensional (2-D) materials. We have recently exfoliated quintuples – five atomic layers – of bismuth telluride (Bi2Te3) and related materials, which reveal thermoelectric and topological insulator properties [8-11]. It was shown tha ...
Double Charge Ordering States and Spin Ordering State Observed
... in the 3D CO state, so the energy of the 2D CO is higher. Significantly we have observed two separate peaks, which indicated that the 2D CO is indeed composed of non-degenerate double states. The energies are 170 meV (41.2 THz) and 193 meV (46.6 THz) higher than that of the 3D CO state, respectively ...
... in the 3D CO state, so the energy of the 2D CO is higher. Significantly we have observed two separate peaks, which indicated that the 2D CO is indeed composed of non-degenerate double states. The energies are 170 meV (41.2 THz) and 193 meV (46.6 THz) higher than that of the 3D CO state, respectively ...
Effect of Hippuric Acid on the Growth, Structural and Optical
... the many researchers probably because of their simple structure and many desirable properties associated with a hydrogen bond system involving a large isotopic effect, broad transparency range, high laser damage threshold and relatively low production cost [1, 2]. Nonlinear optics (NLO) has wide app ...
... the many researchers probably because of their simple structure and many desirable properties associated with a hydrogen bond system involving a large isotopic effect, broad transparency range, high laser damage threshold and relatively low production cost [1, 2]. Nonlinear optics (NLO) has wide app ...
MaterialEASE: Amorphous Materials: A Tutorial on Noncrystalline
... be prepared with an amorphous structure. The higher the critical cooling rate of the materials, the smaller the maximum thickness. So, while there are techniques for achieving rapid cooling – such as melt spinning and splat quenching – the amorphous product is often quite thin. Some metallic glasses ...
... be prepared with an amorphous structure. The higher the critical cooling rate of the materials, the smaller the maximum thickness. So, while there are techniques for achieving rapid cooling – such as melt spinning and splat quenching – the amorphous product is often quite thin. Some metallic glasses ...
Thermal Detectors - Photonics Research Group
... Pure germanium is transparent in the infrared, but with enough compensated doping it becomes a good conductor with a high-temperature coefficient of resistance.8 Typical concentrations are about 1016 cm23 of gallium and 1015 of indium. Even these are not sufficient at wavelengths shorter than 10 mm ...
... Pure germanium is transparent in the infrared, but with enough compensated doping it becomes a good conductor with a high-temperature coefficient of resistance.8 Typical concentrations are about 1016 cm23 of gallium and 1015 of indium. Even these are not sufficient at wavelengths shorter than 10 mm ...
Characterization of Nano Materials using Electron Microscopy
... higher energy electron to fill the shell and release energy. These characteristic x-rays are used to identify the composition and measure the abundance of elements in the sample, as already described under EDS in Section 1. X-ray Diffraction. Sample preparation for SEM: All samples must also be of a ...
... higher energy electron to fill the shell and release energy. These characteristic x-rays are used to identify the composition and measure the abundance of elements in the sample, as already described under EDS in Section 1. X-ray Diffraction. Sample preparation for SEM: All samples must also be of a ...
Nano-TN 2016 Program
... Chairman : Didier PRIBAT Graphene derivatives based nanocomposites for potential applications Smart Composite Materials for Structural Applications - Effects of Nanomatarials & Nanotechnologies elaboration of nanocomposite polymers: corrosion and fire resistance performances Pulse-power integrated-d ...
... Chairman : Didier PRIBAT Graphene derivatives based nanocomposites for potential applications Smart Composite Materials for Structural Applications - Effects of Nanomatarials & Nanotechnologies elaboration of nanocomposite polymers: corrosion and fire resistance performances Pulse-power integrated-d ...
Ripplon-induced tunneling transverse to the magnetic field P. M. Platzman
... weak, and therefore the crossover from the tunneling without ripplons to the ripplon-induced one occurs for a very close to 1. The dependence of the exponent R on the magnetic field is comparatively weak for a ;1, in contrast to the extremely steep dependence of the tunneling rate without ripplons, ...
... weak, and therefore the crossover from the tunneling without ripplons to the ripplon-induced one occurs for a very close to 1. The dependence of the exponent R on the magnetic field is comparatively weak for a ;1, in contrast to the extremely steep dependence of the tunneling rate without ripplons, ...
5 mm thick periodically poled Rb-doped KTP for high
... LiTaO3 (PPMgLT) with thicknesses of up to 5 mm along the polar axis have been recently reported [5,6]. In these materials the decrease of the coercive field with increasing temperature was employed in order to limit the electric-field magnitude required for the ferroelectric domain inversion. Howeve ...
... LiTaO3 (PPMgLT) with thicknesses of up to 5 mm along the polar axis have been recently reported [5,6]. In these materials the decrease of the coercive field with increasing temperature was employed in order to limit the electric-field magnitude required for the ferroelectric domain inversion. Howeve ...
Thermally activated processes in materials probed by nanoindentation
... Hohenwarter, R. Pippan, D. Kiener: Thermally Activated Deformation Processes in Body-Centered Cr – How Microstructure ...
... Hohenwarter, R. Pippan, D. Kiener: Thermally Activated Deformation Processes in Body-Centered Cr – How Microstructure ...
Ionizing Systems
... Static electricity in industrial applications can be reduced or eliminated through increased air humidity, soaking, flame treatment or through ionizers. Haug specialises in the manufacture of ionization systems and produces devices, in Switzerland and Germany, for eliminating static electricity as w ...
... Static electricity in industrial applications can be reduced or eliminated through increased air humidity, soaking, flame treatment or through ionizers. Haug specialises in the manufacture of ionization systems and produces devices, in Switzerland and Germany, for eliminating static electricity as w ...
How do atoms arrange themselves to form solids? • Fundamental
... ¾ Both FCC and HCP crystal structures have atomic packing factors of 0.74 (maximum possible value) ¾ Both FCC and HCP crystal structures may be generated by the stacking of close-packed planes ¾ The difference between the two structures is in the ...
... ¾ Both FCC and HCP crystal structures have atomic packing factors of 0.74 (maximum possible value) ¾ Both FCC and HCP crystal structures may be generated by the stacking of close-packed planes ¾ The difference between the two structures is in the ...
Thermal Wave Measurements with a Mirage Detection for
... Application in the laser technique is determined also by thermal properties of a used crystal. The thermal expansion coefficient is an important factor during the growth process and for pure GdCOB below 900◦ C is equal to 10.5 × 10−6 K−1 , 8.3 × 10−6 K−1 , 14.7 × 10−6 K−1 along X, Y , Z optical dire ...
... Application in the laser technique is determined also by thermal properties of a used crystal. The thermal expansion coefficient is an important factor during the growth process and for pure GdCOB below 900◦ C is equal to 10.5 × 10−6 K−1 , 8.3 × 10−6 K−1 , 14.7 × 10−6 K−1 along X, Y , Z optical dire ...
Synthesis, Structural and Density functional Theory Investigations on
... graphite monochromated Mo-Kα (λ = 0.71073 A°) radiation and a ω-2θ scan mode. A total of 1762 independent reflections were collected in the range of 4.02◦ < θ < 27.34◦, of which 1697 reflections with I > 2σ (I) were considered to be observed and used in the succeeding refinement. The structure was s ...
... graphite monochromated Mo-Kα (λ = 0.71073 A°) radiation and a ω-2θ scan mode. A total of 1762 independent reflections were collected in the range of 4.02◦ < θ < 27.34◦, of which 1697 reflections with I > 2σ (I) were considered to be observed and used in the succeeding refinement. The structure was s ...
Etching of Antimonide-Based Semiconductor Materials
... Light emitting diodes (LEDs) fabricated on narrow bandgap semiconductors such as AlInSb and GaInSb offer a cheap and compact solution for developing gas sensors in the 3-5 mm wavelength range [1]. Fabrication of these devices requires a precisely controllable etching method to build mesa structures. ...
... Light emitting diodes (LEDs) fabricated on narrow bandgap semiconductors such as AlInSb and GaInSb offer a cheap and compact solution for developing gas sensors in the 3-5 mm wavelength range [1]. Fabrication of these devices requires a precisely controllable etching method to build mesa structures. ...
Spin Dynamics in InAs quantum dots Report on the measurements
... Mobility period from May 23 to June 13 Introduction It is well known that semiconductor nanostructures provide a means to create artificial potentials for carriers, electrons and holes in semiconductors, opening the way to new device concepts. In particular, when the confinement potential is limited ...
... Mobility period from May 23 to June 13 Introduction It is well known that semiconductor nanostructures provide a means to create artificial potentials for carriers, electrons and holes in semiconductors, opening the way to new device concepts. In particular, when the confinement potential is limited ...
Three-dimensional photonic crystals for optical wavelengths
... Since the concept of the photonic band gap was presented,1,2 photonic crystals have attracted much attention in the field of optelectronics, because they have the potential to realize integrated optical devices with, for example, thresholdless lasers,3 high-reflectivity mirrors, and polarizing beam ...
... Since the concept of the photonic band gap was presented,1,2 photonic crystals have attracted much attention in the field of optelectronics, because they have the potential to realize integrated optical devices with, for example, thresholdless lasers,3 high-reflectivity mirrors, and polarizing beam ...
manitoba institute for materials
... From prescription drugs, to cookware, to computer chips, many materials that are used every day are made of crystals that possess special properties. The properties of any material are largely determined by how its atoms are arranged. For crystalline materials, the atomic arrangement — as well as th ...
... From prescription drugs, to cookware, to computer chips, many materials that are used every day are made of crystals that possess special properties. The properties of any material are largely determined by how its atoms are arranged. For crystalline materials, the atomic arrangement — as well as th ...
Preparation of ultrathin free-standing targets for „e,2e
... its characteristic impedance Z0550 V is the same as the output impedance of the rf power supply. Once the value of R is determined, which is about 12 V at 13.5 MHz, one can use two RG58 cables with lengths l 1 and l 2 to match the impedance as shown in Fig. 2. Ideally there should be no power reflec ...
... its characteristic impedance Z0550 V is the same as the output impedance of the rf power supply. Once the value of R is determined, which is about 12 V at 13.5 MHz, one can use two RG58 cables with lengths l 1 and l 2 to match the impedance as shown in Fig. 2. Ideally there should be no power reflec ...
Introduction To Materials Science, Chapter 3
... The density of a crystalline material, = the density of the unit cell = (atoms in the unit cell, n ) (mass of an atom, M) / (the volume of the cell, Vc) Atoms in the unit cell, n = 2 (BCC); 4 (FCC); 6 (HCP) Mass of an atom, M = Atomic weight, A, in amu (or g/mol) is given in the periodic table. ...
... The density of a crystalline material, = the density of the unit cell = (atoms in the unit cell, n ) (mass of an atom, M) / (the volume of the cell, Vc) Atoms in the unit cell, n = 2 (BCC); 4 (FCC); 6 (HCP) Mass of an atom, M = Atomic weight, A, in amu (or g/mol) is given in the periodic table. ...
capacitive transducer
... polymer films can also be used as piezoelectric materials. For piezoelectric effect, the crystal should have natural asymmetrical charge distribution. Because of this asymmetric charge distribution, the lattice deformation takes place. The lattice deformation is nothing but relative displacement of ...
... polymer films can also be used as piezoelectric materials. For piezoelectric effect, the crystal should have natural asymmetrical charge distribution. Because of this asymmetric charge distribution, the lattice deformation takes place. The lattice deformation is nothing but relative displacement of ...
Slide 1
... vapour deposition (either physical or chemical) is a coating process, where coating material is condensed in vacuum at the substrate from vapour phase, forming a thin (≤ 10 μm in the case of physical deposition and ≤ 1000 μm in the case of chemical deposition) film. Sometimes the deposited material ...
... vapour deposition (either physical or chemical) is a coating process, where coating material is condensed in vacuum at the substrate from vapour phase, forming a thin (≤ 10 μm in the case of physical deposition and ≤ 1000 μm in the case of chemical deposition) film. Sometimes the deposited material ...
Semiconductor
A semiconductor material has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Semiconductors are the foundation of modern electronics. Semiconducting materials exist in two types - elemental materials and compound materials. The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of electrons and holes in a crystal lattice. The unique arrangement of the crystal lattice makes silicon and germanium the most commonly used elements in the preparation of semiconducting materials. An increased knowledge of semiconductor materials and fabrication processes has made possible continuing increases in the complexity and speed of microprocessors and memory devices. Some of the information on this page may be outdated within a year because new discoveries are made in the field frequently.The electrical conductivity of a semiconductor material increases with increasing temperature, which is behaviour opposite to that of a metal. Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by controlled addition of impurities, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.Current conduction in a semiconductor occurs through the movement of free electrons and ""holes"", collectively known as charge carriers. Adding impurity atoms to a semiconducting material, known as ""doping"", greatly increases the number of charge carriers within it. When a doped semiconductor contains mostly free holes it is called ""p-type"", and when it contains mostly free electrons it is known as ""n-type"". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behaviour.Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. Development of quantum physics in turn allowed the development of the transistor in 1947. Although some pure elements and many compounds display semiconductor properties, silicon, germanium, and compounds of gallium are the most widely used in electronic devices. Elements near the so-called ""metalloid staircase"", where the metalloids are located on the periodic table, are usually used as semiconductors.The nickname of the southern area of Northern California is Silicon Valley because of all the influential tech companies that have their headquarters there. An integral part of today’s technology is built upon semiconductors, which are made primarily of silicon. Some major companies include Marvell Technology Group, National Semiconductor (now part of Texas Instruments), and Advanced Micro Devices.