Structures and Properties of Ceramics
... thermal and mechanical stability, making them suitable for applications as cutting tools, wear-resistant parts and structural components at high temperatures. TiN has a cubic structure which is perhaps the simplest and best known of structure types. Cations and anions both lie at the nodes of separa ...
... thermal and mechanical stability, making them suitable for applications as cutting tools, wear-resistant parts and structural components at high temperatures. TiN has a cubic structure which is perhaps the simplest and best known of structure types. Cations and anions both lie at the nodes of separa ...
Similarities in the electrical properties of transition metal–hydrogen
... concentration depth profiles with Eq. (1) can be formed for the various complexes and provide an estimate of the number of H atoms. This means for platinum (Fig. 3) that E(250) has the largest penetration depth and is therefore assigned to a complex with only one hydrogen atom. E(90) and H(210) exhi ...
... concentration depth profiles with Eq. (1) can be formed for the various complexes and provide an estimate of the number of H atoms. This means for platinum (Fig. 3) that E(250) has the largest penetration depth and is therefore assigned to a complex with only one hydrogen atom. E(90) and H(210) exhi ...
CuClCu2TeS3: Synthesis, Structure
... cm-1 is found for the high energy mode. The splitting of the symmetrical and the asymmetrical modes for (CuI)3Cu2TeS3 is stronger than for CuClCu2TeS3, which is due to the different degree of distortion of the [TeS3]2- units in the solid state. However, the mean value of the Te-S stretching frequenc ...
... cm-1 is found for the high energy mode. The splitting of the symmetrical and the asymmetrical modes for (CuI)3Cu2TeS3 is stronger than for CuClCu2TeS3, which is due to the different degree of distortion of the [TeS3]2- units in the solid state. However, the mean value of the Te-S stretching frequenc ...
novacap technical brochure
... The insulation resistance is a measure of the capability of a material to withstand leakage of current under a Vdc potential gradient. Insulators are materials that have no free electrons in their atomic structure which are free to move under any applied field intensity. In ceramic dielectrics, the ...
... The insulation resistance is a measure of the capability of a material to withstand leakage of current under a Vdc potential gradient. Insulators are materials that have no free electrons in their atomic structure which are free to move under any applied field intensity. In ceramic dielectrics, the ...
Material Science - New Age International
... A material having high heat requirement per unit volume possesses a low thermal diffusivity because more heat must be added to or removed from the material for effecting a temperature change. (vi) Thermal Fatigue: This is the mechanical effect of repeated thermal stresses caused by repeated heating ...
... A material having high heat requirement per unit volume possesses a low thermal diffusivity because more heat must be added to or removed from the material for effecting a temperature change. (vi) Thermal Fatigue: This is the mechanical effect of repeated thermal stresses caused by repeated heating ...
Hard Materials with Functionally Designed Mesostructure
... mesostructology is important to understand material properties and how to optimize those properties. Unlike microstructology, the study of mesostructure is in its infancy. There is much to learn about how FDM enhances the performance of materials. Experimental testing, analytical modeling, and numer ...
... mesostructology is important to understand material properties and how to optimize those properties. Unlike microstructology, the study of mesostructure is in its infancy. There is much to learn about how FDM enhances the performance of materials. Experimental testing, analytical modeling, and numer ...
Reflection-Free One-Way Edge Modes in a Gyromagnetic Photonic Crystal
... and technologically important optical properties [1–3]. The theory of these devices relies on an analogy between Maxwell’s equations in a periodic medium and quantum mechanics with a periodic Hamiltonian, from which photonic band structures arise in a manner analogous to electronic band structures i ...
... and technologically important optical properties [1–3]. The theory of these devices relies on an analogy between Maxwell’s equations in a periodic medium and quantum mechanics with a periodic Hamiltonian, from which photonic band structures arise in a manner analogous to electronic band structures i ...
Plasma wave mediated attractive potentials: a prerequisite for
... which separates it into two parts. The first term is independent of the presence of ion-acoustic waves. It is thus completely spherically symmetric resulting in the known Debye-screening potential field of the point charge (treated in Neufeld and Ritchie, 1955). Its contribution to the potential at ...
... which separates it into two parts. The first term is independent of the presence of ion-acoustic waves. It is thus completely spherically symmetric resulting in the known Debye-screening potential field of the point charge (treated in Neufeld and Ritchie, 1955). Its contribution to the potential at ...
06_chapter 1
... Now thin films have become to play inevitable role in the development of various decorative coatings, corrosion resistance coatings, optoelectronic devices like microelectronics, optical coating and integrated optics, informatics quantum engineering, metallurgy coatings, surface engineering and sola ...
... Now thin films have become to play inevitable role in the development of various decorative coatings, corrosion resistance coatings, optoelectronic devices like microelectronics, optical coating and integrated optics, informatics quantum engineering, metallurgy coatings, surface engineering and sola ...
IOSR Journal of Applied Physics (IOSR-JAP)
... al. in 2001. The first device has a thermal oxide of 8.5 nm and a substrate bias of -1V [1]. The second device has a thermal oxide of 7.7nm and the substrate is grounded [2]. The analysis on the device data provide the electron and hole effective masses in the thermal silicon dioxide, the conduction ...
... al. in 2001. The first device has a thermal oxide of 8.5 nm and a substrate bias of -1V [1]. The second device has a thermal oxide of 7.7nm and the substrate is grounded [2]. The analysis on the device data provide the electron and hole effective masses in the thermal silicon dioxide, the conduction ...
Thermal properties Heat capacity C = ΔQ/ΔT = dQ/dT [J/deg] Heat
... MSE 2090: Introduction to Materials Science ...
... MSE 2090: Introduction to Materials Science ...
1. INTRODUCTION This Chapter briefly introduces
... a dispersion of colloidal particles. The article to be coated is immersed in an aqueous dispersion which dissociates into negatively charged colloidal particles and positive cations. An electric field is applied with the article as anode (positive electrode); the colloidal particles are transported ...
... a dispersion of colloidal particles. The article to be coated is immersed in an aqueous dispersion which dissociates into negatively charged colloidal particles and positive cations. An electric field is applied with the article as anode (positive electrode); the colloidal particles are transported ...
Chapter-2 - Shodhganga
... experiments are useful for determining the crystal structures of materials. Much more information about a material is contained in its diffraction pattern. However, crystals with precise periodicities over long distances have sharp and clear diffraction peaks. Crystals with defects (such as impuriti ...
... experiments are useful for determining the crystal structures of materials. Much more information about a material is contained in its diffraction pattern. However, crystals with precise periodicities over long distances have sharp and clear diffraction peaks. Crystals with defects (such as impuriti ...
Chapter 4: Imperfections in Solids Imperfections in Solids
... by the presence of imperfections. •It is important to have a knowledge about the types of imperfections that exist and the roles they play in affecting the behavior of materials. •The mechanical properties of pure metals experience significant changes when alloyed (i.e., when impurity atoms are adde ...
... by the presence of imperfections. •It is important to have a knowledge about the types of imperfections that exist and the roles they play in affecting the behavior of materials. •The mechanical properties of pure metals experience significant changes when alloyed (i.e., when impurity atoms are adde ...
Lec8 - Metallurgical and Materials Engineering – IIT Madras
... factor term is similar to what was defined earlier for X-ray diffraction. It has the following characteristics 1. Scattering is maximum for small θ. As θ increases, f drops. 2. As atomic number increases, f is higher. For θ equal to zero, f is usually very close to the atomic number (Z). 3. As wavel ...
... factor term is similar to what was defined earlier for X-ray diffraction. It has the following characteristics 1. Scattering is maximum for small θ. As θ increases, f drops. 2. As atomic number increases, f is higher. For θ equal to zero, f is usually very close to the atomic number (Z). 3. As wavel ...
Lecture 11: TEM: Beam - sample interaction Contents
... factor term is similar to what was defined earlier for X-ray diffraction. It has the following characteristics 1. Scattering is maximum for small θ. As θ increases, f drops. 2. As atomic number increases, f is higher. For θ equal to zero, f is usually very close to the atomic number (Z). 3. As wavel ...
... factor term is similar to what was defined earlier for X-ray diffraction. It has the following characteristics 1. Scattering is maximum for small θ. As θ increases, f drops. 2. As atomic number increases, f is higher. For θ equal to zero, f is usually very close to the atomic number (Z). 3. As wavel ...
Full Text PDF
... bands appear at 3.098 eV and 2.94 eV, respectively (Fig. 2b). Only a trace of D—A emission at 2.7 eV from pure ZnSe is observed in this case. The edge luminescence is completely thermally quenched at temperatures higher than 200 K. The line of highest photon energy remains unquenched up to room temp ...
... bands appear at 3.098 eV and 2.94 eV, respectively (Fig. 2b). Only a trace of D—A emission at 2.7 eV from pure ZnSe is observed in this case. The edge luminescence is completely thermally quenched at temperatures higher than 200 K. The line of highest photon energy remains unquenched up to room temp ...
Cryoetching processes applied to ULK material
... comparison, the FTIR spectrum of the pristine sample is also shown. In the inset, we show a zoom of the SiCH3 absorption line. We clearly observe that, for the 120°C curve, this absorption line is close to the one obtained in the pristine sample, which means that very few methyl depletion occurs at ...
... comparison, the FTIR spectrum of the pristine sample is also shown. In the inset, we show a zoom of the SiCH3 absorption line. We clearly observe that, for the 120°C curve, this absorption line is close to the one obtained in the pristine sample, which means that very few methyl depletion occurs at ...
Ch 4 Electrical and optical properties
... sensitive to ambient humidity and surface contamination. The surface resistivity is determined from the flow of current between two electrodes in contact with one surface of a thin specimen of polymer material. The extremely low values of current at typical working voltages implied by the high value ...
... sensitive to ambient humidity and surface contamination. The surface resistivity is determined from the flow of current between two electrodes in contact with one surface of a thin specimen of polymer material. The extremely low values of current at typical working voltages implied by the high value ...
Materials Science and Engineering
... potential wells; potential barriers and tunnelling, the harmonic oscillator, hydrogen atom, zeeman effect, electron spin, m any electron atoms and the exclusion principle, X-ray spectra MSE 516 Nanomaterials and Surface Engineering ...
... potential wells; potential barriers and tunnelling, the harmonic oscillator, hydrogen atom, zeeman effect, electron spin, m any electron atoms and the exclusion principle, X-ray spectra MSE 516 Nanomaterials and Surface Engineering ...
STUDIUM DOKTORANCKIE W ITE Wybrane problemy
... diagnostic tool for quality and reliability of devices. At the same time, high level of the low-frequency noise is one of the factors, which restricts application of these devices for communication systems. In most cases, the high low-frequency noise level in microwave transistors translates into un ...
... diagnostic tool for quality and reliability of devices. At the same time, high level of the low-frequency noise is one of the factors, which restricts application of these devices for communication systems. In most cases, the high low-frequency noise level in microwave transistors translates into un ...
Low-threshold organic laser based on an oligofluorene truxene
... that the light traveling within the T4 truxene thin film experiences very few losses either from scattering or reabsorption by the truxene molecules. In comparison to polyfluorene, one of the benchmark blue-emitting organic semiconductor laser gain materials, the optical losses within a thin film wa ...
... that the light traveling within the T4 truxene thin film experiences very few losses either from scattering or reabsorption by the truxene molecules. In comparison to polyfluorene, one of the benchmark blue-emitting organic semiconductor laser gain materials, the optical losses within a thin film wa ...
Hesham Mohsen - Smart Materials
... For the next few decades, piezoelectricity remained something of a laboratory curiosity. More work was done to explore and define the crystal structures that exhibited piezoelectricity. This culminated in 1910 with the publication of Woldemar Voigt's Lehrbuch der Kristallphysik (Textbook on Crystal ...
... For the next few decades, piezoelectricity remained something of a laboratory curiosity. More work was done to explore and define the crystal structures that exhibited piezoelectricity. This culminated in 1910 with the publication of Woldemar Voigt's Lehrbuch der Kristallphysik (Textbook on Crystal ...
Electronic Structure and Transport Properties of Carbon Based Materials Anders Hansson Link¨
... be treated with ab initio quantum chemistry or first principles solid state physics methods have increased dramatically. Today we are on a routine base performing ab initio or first principles calculations of molecules or unit cells with hundreds of atoms and thousands of electrons. Such studies dea ...
... be treated with ab initio quantum chemistry or first principles solid state physics methods have increased dramatically. Today we are on a routine base performing ab initio or first principles calculations of molecules or unit cells with hundreds of atoms and thousands of electrons. Such studies dea ...
Thermoelectric Materials and Systems
... Thermoelectric energy converters (TE generators) are gaining more and more importance as they do not involve any mechanically moving parts and thus guarantee high reliability along with noiseless and maintenance-free operation. Moreover, they can be operated over a wide temperature range. The enormo ...
... Thermoelectric energy converters (TE generators) are gaining more and more importance as they do not involve any mechanically moving parts and thus guarantee high reliability along with noiseless and maintenance-free operation. Moreover, they can be operated over a wide temperature range. The enormo ...
Semiconductor
A semiconductor material has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Semiconductors are the foundation of modern electronics. Semiconducting materials exist in two types - elemental materials and compound materials. The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of electrons and holes in a crystal lattice. The unique arrangement of the crystal lattice makes silicon and germanium the most commonly used elements in the preparation of semiconducting materials. An increased knowledge of semiconductor materials and fabrication processes has made possible continuing increases in the complexity and speed of microprocessors and memory devices. Some of the information on this page may be outdated within a year because new discoveries are made in the field frequently.The electrical conductivity of a semiconductor material increases with increasing temperature, which is behaviour opposite to that of a metal. Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by controlled addition of impurities, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.Current conduction in a semiconductor occurs through the movement of free electrons and ""holes"", collectively known as charge carriers. Adding impurity atoms to a semiconducting material, known as ""doping"", greatly increases the number of charge carriers within it. When a doped semiconductor contains mostly free holes it is called ""p-type"", and when it contains mostly free electrons it is known as ""n-type"". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behaviour.Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. Development of quantum physics in turn allowed the development of the transistor in 1947. Although some pure elements and many compounds display semiconductor properties, silicon, germanium, and compounds of gallium are the most widely used in electronic devices. Elements near the so-called ""metalloid staircase"", where the metalloids are located on the periodic table, are usually used as semiconductors.The nickname of the southern area of Northern California is Silicon Valley because of all the influential tech companies that have their headquarters there. An integral part of today’s technology is built upon semiconductors, which are made primarily of silicon. Some major companies include Marvell Technology Group, National Semiconductor (now part of Texas Instruments), and Advanced Micro Devices.