1 Synthesis of a mixed-valent tin nitride and considerations of its
... When target-substrate distance was changed at a given substrate temperature, differences in crystallographic texture were observed in the two-dimensional XRD detector images (Figure S10). Small target-substrate distances (dTS = 13-14 cm) generally produced films with increased long-range order compa ...
... When target-substrate distance was changed at a given substrate temperature, differences in crystallographic texture were observed in the two-dimensional XRD detector images (Figure S10). Small target-substrate distances (dTS = 13-14 cm) generally produced films with increased long-range order compa ...
Heat conduction in carbon nanotube materials
... nanotubes is characterized solely by a new dimensionless parameter BiT (curve in Fig. 3). This parameters is equal to the ratio of the total contact conductance rc hNJ i of a nanotube at all contacts it has with other CNTs to the intrinsic conductance of the nanotube, kT AT =LT . By analogy with the ...
... nanotubes is characterized solely by a new dimensionless parameter BiT (curve in Fig. 3). This parameters is equal to the ratio of the total contact conductance rc hNJ i of a nanotube at all contacts it has with other CNTs to the intrinsic conductance of the nanotube, kT AT =LT . By analogy with the ...
Homogenization principle based multi
... model. To model such open-cell materials on the macro-scale (i.e. level of an engineering structure), homogenization on the meso-scale, used to determine the non-linear material parameters for a classical FE model, is an appropriate approach (Loehnert and Wriggers 2008, Krstulovic-Opara et al. 2008) ...
... model. To model such open-cell materials on the macro-scale (i.e. level of an engineering structure), homogenization on the meso-scale, used to determine the non-linear material parameters for a classical FE model, is an appropriate approach (Loehnert and Wriggers 2008, Krstulovic-Opara et al. 2008) ...
Module 7 Wet and Dry Etching Class Notes
... cost-efficient, and it etches quickly. Sometimes, high selectivity can also be achieved. However, it is difficult to control, prone to high defect levels on wafers, inadequate for defining feature sizes that are smaller than 1μm, and produces chemical wastes. Due to these properties, wet etching is ...
... cost-efficient, and it etches quickly. Sometimes, high selectivity can also be achieved. However, it is difficult to control, prone to high defect levels on wafers, inadequate for defining feature sizes that are smaller than 1μm, and produces chemical wastes. Due to these properties, wet etching is ...
Acetate ligands determine the crystal structure of CdSe
... In the past decade, the interest in two dimensional (2D) nanomaterials has increased dramatically, since these show many desirable physical and electronic properties, often very different from their bulk counterparts. This revolution, which started with graphene,1 now includes a large variety of mate ...
... In the past decade, the interest in two dimensional (2D) nanomaterials has increased dramatically, since these show many desirable physical and electronic properties, often very different from their bulk counterparts. This revolution, which started with graphene,1 now includes a large variety of mate ...
this PDF file - Canadian Center of Science and Education
... - and - formulas are unlike but under strict conditions, while if layers 1 and 3 are transparent whether layer 2 is absorbing or not. If light waves travelling in layer 1 hit its interface to coherent thin layer 2, multiple internal reflections inside it and their interference are significant. Part ...
... - and - formulas are unlike but under strict conditions, while if layers 1 and 3 are transparent whether layer 2 is absorbing or not. If light waves travelling in layer 1 hit its interface to coherent thin layer 2, multiple internal reflections inside it and their interference are significant. Part ...
XRD and FT-IR Studies on Lead (II) Nitrate doped Histidine Picrate
... only a limited work on various properties of this complex has been reported [10-11]. It has been reported that doping NLO crystals with organic impurities can alter various physical and chemical properties and doped-NLO crystals may also find applications in optoelectronic devices like pure NLO crys ...
... only a limited work on various properties of this complex has been reported [10-11]. It has been reported that doping NLO crystals with organic impurities can alter various physical and chemical properties and doped-NLO crystals may also find applications in optoelectronic devices like pure NLO crys ...
Full-Text PDF
... Compounds whose bonds have a strong covalent character, such as MoS2, are relatively flexible, enabling even bending of the layers. This is generally not the case for layered compounds with more ionic character, like metal halides and oxides. As a result, hollow closed-cage structures are composed o ...
... Compounds whose bonds have a strong covalent character, such as MoS2, are relatively flexible, enabling even bending of the layers. This is generally not the case for layered compounds with more ionic character, like metal halides and oxides. As a result, hollow closed-cage structures are composed o ...
Electronic transport at semiconductor
... charged electronic states at the semiconductor surface, which were screening out the electric field induced by the gate [2]. In other words, the induced charges are trapped in the surface states, becoming immobile. Thus the charges in the bulk of the semiconductor hardly felt the effect of the gate, a ...
... charged electronic states at the semiconductor surface, which were screening out the electric field induced by the gate [2]. In other words, the induced charges are trapped in the surface states, becoming immobile. Thus the charges in the bulk of the semiconductor hardly felt the effect of the gate, a ...
Terahertz Technology
... but collectively, according to their average properties. These are the engineered materials now known as metamaterials. Engineering a material with negative ε was easy: this equates to opacity, a property of all metals for incident radiation below a certain frequency. It was necessary to show only t ...
... but collectively, according to their average properties. These are the engineered materials now known as metamaterials. Engineering a material with negative ε was easy: this equates to opacity, a property of all metals for incident radiation below a certain frequency. It was necessary to show only t ...
Electrically Conductive Enamel - IEI, International Enamellers Institute
... It can be gathered from diagram 13 that the coat-on-coat enamelling (according to the laws of electrical engineering) shows a higher electrical resistance and therefore lower electrical conductivity, on condition that the overall thickness is thicker than that of the single-coated enamelling (compa ...
... It can be gathered from diagram 13 that the coat-on-coat enamelling (according to the laws of electrical engineering) shows a higher electrical resistance and therefore lower electrical conductivity, on condition that the overall thickness is thicker than that of the single-coated enamelling (compa ...
Module 10 Crystal Defects in Metals I Lecture 10 Crystal
... known as grains) and the way they are arranged. In the previous module we have looked at the mechanisms of plastic deformation. We have seen that the shear stress is the main driving force for deformation. On the basis of simple assumptions the strength of an ideal ...
... known as grains) and the way they are arranged. In the previous module we have looked at the mechanisms of plastic deformation. We have seen that the shear stress is the main driving force for deformation. On the basis of simple assumptions the strength of an ideal ...
Roadmap for Emerging Materials for Spintronic Device Applications
... months earlier. By using such a GMR junction as a read head, he GMR ratio of approximately 75% with the resistance area product (RA) of almost 0.17 Ω⋅µm2 satisfies the requirement for 2-Tbit/in2 areal density in a hard disk drive (HDD). Figure 2 shows the requirement and recent major efforts towards ...
... months earlier. By using such a GMR junction as a read head, he GMR ratio of approximately 75% with the resistance area product (RA) of almost 0.17 Ω⋅µm2 satisfies the requirement for 2-Tbit/in2 areal density in a hard disk drive (HDD). Figure 2 shows the requirement and recent major efforts towards ...
A high rate Li-rich layered MNC cathode material for lithium
... coin cells, cycled at low rates (C/20), were rinsed with DMC and extracted, then sealed with Kapton tape and stored in glass vials, were taped with Teon tape, and packed in moisture impermeable aluminized bags under argon to avoid any possible oxidation during transportation to the light source. Th ...
... coin cells, cycled at low rates (C/20), were rinsed with DMC and extracted, then sealed with Kapton tape and stored in glass vials, were taped with Teon tape, and packed in moisture impermeable aluminized bags under argon to avoid any possible oxidation during transportation to the light source. Th ...
High Performance Polymers: Power Point
... This performance is often reflected in higher pricing • Exceptions include some halogen containing polymers ...
... This performance is often reflected in higher pricing • Exceptions include some halogen containing polymers ...
Monolayer Single-Crystal 1T′-MoTe2 Grown by
... promise of MX2 monolayer films for energy7 and other applications have been made apparent through investigations of their optical,8,9 electrical,9 and mechanical10/tribological11 properties. Development of reproducible growth methods for high-quality monolayer MX2 films is a key step in advancing basi ...
... promise of MX2 monolayer films for energy7 and other applications have been made apparent through investigations of their optical,8,9 electrical,9 and mechanical10/tribological11 properties. Development of reproducible growth methods for high-quality monolayer MX2 films is a key step in advancing basi ...
Effective Thermophysical Properties of Thermal Interface Materials
... gap filler such as gas or phase change material, was developed. The proposed joint model is compared with the experimental data obtained for several commercially available graphite materials. The specimens were placed under 0.34 − 1.03 M P a pressure, between aluminum 6063 contacting surfaces of 1 µm ...
... gap filler such as gas or phase change material, was developed. The proposed joint model is compared with the experimental data obtained for several commercially available graphite materials. The specimens were placed under 0.34 − 1.03 M P a pressure, between aluminum 6063 contacting surfaces of 1 µm ...
Xerographic spectroscopy of gap states
... other complimentary techniques which probe the gap states are needed. Xerographic techniques which were initially developed to characterize properties of electrophotographic (xerographic) photoreceptors [17], seemed to be direct, suitable, informative, powerful, and widely applicable for the study o ...
... other complimentary techniques which probe the gap states are needed. Xerographic techniques which were initially developed to characterize properties of electrophotographic (xerographic) photoreceptors [17], seemed to be direct, suitable, informative, powerful, and widely applicable for the study o ...
Location of Trapped Electron Centers in the Bulk of Epitaxial MgO
... properties such as molecular adsorption, charge trapping, luminescence, or catalytic activity [1–7]. Another class of topological defects are dislocations, which are key for a variety of important processes such as corrosion (e.g., in biomedical implants) or the insulating properties in oxide dielec ...
... properties such as molecular adsorption, charge trapping, luminescence, or catalytic activity [1–7]. Another class of topological defects are dislocations, which are key for a variety of important processes such as corrosion (e.g., in biomedical implants) or the insulating properties in oxide dielec ...
Materials for Optical Systems
... Technology, Vol. 4, Part 2;5 ASM Handbook, Vol. 1 and 2 (early printings are titled Metals Handbook, 10th ed.);6,7 and Engineered Materials Handbook, Vol. 1 to 4.8-11 Physical For all materials under consideration here, the physical properties of interest are mass density r, electrical conductivity, ...
... Technology, Vol. 4, Part 2;5 ASM Handbook, Vol. 1 and 2 (early printings are titled Metals Handbook, 10th ed.);6,7 and Engineered Materials Handbook, Vol. 1 to 4.8-11 Physical For all materials under consideration here, the physical properties of interest are mass density r, electrical conductivity, ...
634_1.pdf
... stringent demands on key metrology tools. Because their wavelengths (less than 10Å) are similar to the sizes of the smallest features in advanced devices, Xrays are well suited to the structural characterization of very small and/or thin structures. The interactions of X-rays with atoms tends to be ...
... stringent demands on key metrology tools. Because their wavelengths (less than 10Å) are similar to the sizes of the smallest features in advanced devices, Xrays are well suited to the structural characterization of very small and/or thin structures. The interactions of X-rays with atoms tends to be ...
Grains and grain boundaries in highly crystalline monolayer
... either odd- or even-membered rings can form grain boundaries depending on the tilt angle and stoichiometry, among several factors39 . For comparison, graphene’s tilt boundaries are most commonly formed by 5- and 7-membered rings2,40 , whereas twin boundaries have been observed with 8-5-5 motifs4 . O ...
... either odd- or even-membered rings can form grain boundaries depending on the tilt angle and stoichiometry, among several factors39 . For comparison, graphene’s tilt boundaries are most commonly formed by 5- and 7-membered rings2,40 , whereas twin boundaries have been observed with 8-5-5 motifs4 . O ...
Microwave Synthesis of Noncentrosymmetric BaTiO3 Truncated
... a step size of 0.02° and dwell time of 0.6 s per step. The crystal structures of the BT polymorphs were refined by Rietveld analysis (41) as implemented in TOPAS version 3 (42) with a fundamental parameter peak shape profile (43) and the starting models for Pm3̄m (19), P4mm (18), and P4/mmm (44) emp ...
... a step size of 0.02° and dwell time of 0.6 s per step. The crystal structures of the BT polymorphs were refined by Rietveld analysis (41) as implemented in TOPAS version 3 (42) with a fundamental parameter peak shape profile (43) and the starting models for Pm3̄m (19), P4mm (18), and P4/mmm (44) emp ...
STRUCTURE AND CRYSTALLOGRAPHIC TEXTURE IN THE Cu
... at room temperature is significantly higher in comparison with the grain boundaries, dislocations and vacancies. Therefore, reducing the content of alloying elements in the crystal lattice by their redistribution to the grain boundaries could contribute to the improvement of electrical conductivity. ...
... at room temperature is significantly higher in comparison with the grain boundaries, dislocations and vacancies. Therefore, reducing the content of alloying elements in the crystal lattice by their redistribution to the grain boundaries could contribute to the improvement of electrical conductivity. ...
FINITE DIFFERENCE TIME DOMAIN MODELING OF LIGHT
... is peculiar to 2D and 3D photonic crystals and it does not occur in 1D periodic structures. The enhancement of light amplification due to a small group velocity can be so explained [6]: since the photon undergoes many multiple reflections at the lattice discontinuities, the optical path length increas ...
... is peculiar to 2D and 3D photonic crystals and it does not occur in 1D periodic structures. The enhancement of light amplification due to a small group velocity can be so explained [6]: since the photon undergoes many multiple reflections at the lattice discontinuities, the optical path length increas ...
Semiconductor
A semiconductor material has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Semiconductors are the foundation of modern electronics. Semiconducting materials exist in two types - elemental materials and compound materials. The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of electrons and holes in a crystal lattice. The unique arrangement of the crystal lattice makes silicon and germanium the most commonly used elements in the preparation of semiconducting materials. An increased knowledge of semiconductor materials and fabrication processes has made possible continuing increases in the complexity and speed of microprocessors and memory devices. Some of the information on this page may be outdated within a year because new discoveries are made in the field frequently.The electrical conductivity of a semiconductor material increases with increasing temperature, which is behaviour opposite to that of a metal. Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by controlled addition of impurities, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.Current conduction in a semiconductor occurs through the movement of free electrons and ""holes"", collectively known as charge carriers. Adding impurity atoms to a semiconducting material, known as ""doping"", greatly increases the number of charge carriers within it. When a doped semiconductor contains mostly free holes it is called ""p-type"", and when it contains mostly free electrons it is known as ""n-type"". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behaviour.Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. Development of quantum physics in turn allowed the development of the transistor in 1947. Although some pure elements and many compounds display semiconductor properties, silicon, germanium, and compounds of gallium are the most widely used in electronic devices. Elements near the so-called ""metalloid staircase"", where the metalloids are located on the periodic table, are usually used as semiconductors.The nickname of the southern area of Northern California is Silicon Valley because of all the influential tech companies that have their headquarters there. An integral part of today’s technology is built upon semiconductors, which are made primarily of silicon. Some major companies include Marvell Technology Group, National Semiconductor (now part of Texas Instruments), and Advanced Micro Devices.