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Gautam Menon
Gautam Menon

... • Here an RF pulse is applied to rotate nuclear spins from the direction of the local magnetic field . When the RF field is switched off, nuclear spins perform a free precession around the local field and relax back to their initial direction • The frequency of the nuclear spin precession is a measu ...
File
File

Atoms in a magnetic field - University of St Andrews
Atoms in a magnetic field - University of St Andrews

... much stronger than Vmag and the energy level splitting due to the external B-field is small compared to the fine structure. (The term “anomalous” Zeeman effect is historical, and it is actually contradictory because it is more common than the s=0 case.) ...
Magnetism - Cloudfront.net
Magnetism - Cloudfront.net

...  Credit cards and ATM cards store data on ...
B.Dl 1 - Educast
B.Dl 1 - Educast

... INTO VOLTMETER Since Galvanometer is a very sensitive instrument, therefore it can not measure high potential difference. In order to convert a Galvanometer into voltmeter, a very high resistance known as "series resistance" is connected in series to Galvanometer. VALUE OF SERIES RESISTANCE ...
Microscopic Origin of Magnetoelectric Coupling in Noncollinear Multiferroics Jiangping Hu
Microscopic Origin of Magnetoelectric Coupling in Noncollinear Multiferroics Jiangping Hu

ppt
ppt

... the conductor as long as there is motion through the field • If the motion is reversed, the polarity of the potential difference is also reversed ...
Technology Brief 27 Magnetic Resonance Imaging (MRI)
Technology Brief 27 Magnetic Resonance Imaging (MRI)

... magnetic field does not move or hurt the person, although it does polarize (line up) the spins in his/her hydrogen atoms. If the person has any metal inside of him/her (such as implantable medical devices, artificial joints, or bone repair surgeries), this can preclude the use of MRI for that patien ...
Electromagnetism PowerPoint
Electromagnetism PowerPoint

nuclear spin states
nuclear spin states

Document
Document

... When a material is placed in an external magnetic field B0, the resultant field within the material is different from B0. The field due to the material itself, BM, is directly proportional to B0: ...
Recitation.Problems - KFUPM Faculty List
Recitation.Problems - KFUPM Faculty List

... CH27.Problems Circuits JH ...
Magnetic Moments
Magnetic Moments

... Ampere’s law can be used to find the interior magnetic field of the solenoid Consider a rectangle with side ℓ parallel to the interior field and side w perpendicular to the field ...
Magnetic Force on a Current-Carrying Conductor
Magnetic Force on a Current-Carrying Conductor

PlasmaTech_SinglePar..
PlasmaTech_SinglePar..

... phenomena that happen at the magnetic poles of planets and stars. In laboratory-based plasmas magnetic mirror are used in some process systems to confine the plasma. (They were also used – quite unsuccessfully - as a confinement mechanism for fusion plasmas.) ...
Computational Alchemy @Condensed Matter Theory group
Computational Alchemy @Condensed Matter Theory group

Facilitator`s Guide to Magnetism Planetary Magnetic Fields
Facilitator`s Guide to Magnetism Planetary Magnetic Fields

simulation of epitaxial growth and formation of interfacial
simulation of epitaxial growth and formation of interfacial

magnetic field - s3.amazonaws.com
magnetic field - s3.amazonaws.com

Magnetic circuits and transformers
Magnetic circuits and transformers

... dt ∂Φ dt ∂r dt ...
Chapter 17-18 Electricity and Magnetism
Chapter 17-18 Electricity and Magnetism

Chapter 31 Fall 2010 v1
Chapter 31 Fall 2010 v1

Chapter 30.
Chapter 30.

Open file - PebblePad
Open file - PebblePad

Brushless DC Motors
Brushless DC Motors

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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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