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Introduction to Magnetism - Appoquinimink High School
Introduction to Magnetism - Appoquinimink High School

... the first compasses.  In the 1700’s Charles Coulomb studied the forces between lodestones. ...
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... We know everything is made of atoms… Electrons move around the nucleus in orbit, but they also spin on their axis at the same time (just like spinning tops). We know electrons carry electric currents when they move through materials such as metals. You can think of electrons as tiny particles of ele ...
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... Field Lines • Magnetic field lines begin at a magnet’s north pole and end on the south pole. • The field lines are close together where the field is strong and get farther apart as the field gets weaker weaker. • According to the diagram, where is the magnetic field the strongest?. poles. • Near th ...
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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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