Electron-cylotron maser radiation from electron holes
... identical negative spectral drift 1ω/1t < 0 and with highest intensities being restricted to a bandwidth of ∼1 to 2 kHz only. Drifts range around 100 kHz s−1 . Some internal structure may be indicated down to the 33 ms time resolution, but the intense emissions are close to saturation, and the reali ...
... identical negative spectral drift 1ω/1t < 0 and with highest intensities being restricted to a bandwidth of ∼1 to 2 kHz only. Drifts range around 100 kHz s−1 . Some internal structure may be indicated down to the 33 ms time resolution, but the intense emissions are close to saturation, and the reali ...
Effective Field Theory Lectures
... On second look the situation is even worse: since −δ 3 (r) scales as −1/r3 while the kinetic −∇2 term in the Schrödinger equation only scales as 1/r2 you can see that the system does not have a finite energy ground state. For example if you performed a variational ...
... On second look the situation is even worse: since −δ 3 (r) scales as −1/r3 while the kinetic −∇2 term in the Schrödinger equation only scales as 1/r2 you can see that the system does not have a finite energy ground state. For example if you performed a variational ...
4thlectureslideposting
... charges have opposite sign and repulsive if they have the same sign. Forces on a point charge due to other point charges can be added vectorially to get the ...
... charges have opposite sign and repulsive if they have the same sign. Forces on a point charge due to other point charges can be added vectorially to get the ...
Analysis of Power Dissipation and Breakdown
... regarded as a wide band gap semiconductor material for visible light- emitting devices, since electro luminescence was observed for the first time in 1907, and a light emitting diode was fabricated for the first time in 1923 [7]. However, the stable characteristics of SiC have caused difficulty in p ...
... regarded as a wide band gap semiconductor material for visible light- emitting devices, since electro luminescence was observed for the first time in 1907, and a light emitting diode was fabricated for the first time in 1923 [7]. However, the stable characteristics of SiC have caused difficulty in p ...
Slides - Indico
... Doping is the replacement of a small number of atoms in the lattice by atoms of neighboring columns from the atomic table (with one valence electron more or less compared to the basic material). Typical doping concentrations for Si detectors are ≈1012 atoms/cm3 (1014 und 1018 atoms/cm3 for CMOS elem ...
... Doping is the replacement of a small number of atoms in the lattice by atoms of neighboring columns from the atomic table (with one valence electron more or less compared to the basic material). Typical doping concentrations for Si detectors are ≈1012 atoms/cm3 (1014 und 1018 atoms/cm3 for CMOS elem ...