Model Viva Questions for “Fundamental of electrical Engineering”
... and no influence from any external electric field. The conductors thus hold equal and opposite charges on their facing surfaces, and the dielectric develops an electric field. In SI units, a capacitance of one farad means that one coulomb of charge on each conductor causes a voltage of one volt acro ...
... and no influence from any external electric field. The conductors thus hold equal and opposite charges on their facing surfaces, and the dielectric develops an electric field. In SI units, a capacitance of one farad means that one coulomb of charge on each conductor causes a voltage of one volt acro ...
... regarding system stability. The medium vectors produce NP current that mostly has the same direction because of this harmonic. For example, if the initial phase of this harmonic is +90º, the current ib is mostly positive during the time that the reference vector is in the first sextant (Fig. 6.5). A ...
AN2512
... microcontroller, is linearly post-regulated from the 5 V output. This operation is performed by a very low drop voltage regulator, L4931ABD33, in SO-8 package. The voltage regulator delivers up to 100 mA, ensuring good reliability with no heat sink. The feedback network ensures the required insulati ...
... microcontroller, is linearly post-regulated from the 5 V output. This operation is performed by a very low drop voltage regulator, L4931ABD33, in SO-8 package. The voltage regulator delivers up to 100 mA, ensuring good reliability with no heat sink. The feedback network ensures the required insulati ...
AD5726 数据手册DataSheet 下载
... For analog systems designers within industrial/instrumentation equipment OEMs who need high performance ICs at higher voltage levels, iCMOS is a technology platform that enables the development of analog ICs capable of 30 V and operating at ±15 V supplies while allowing dramatic reductions in power ...
... For analog systems designers within industrial/instrumentation equipment OEMs who need high performance ICs at higher voltage levels, iCMOS is a technology platform that enables the development of analog ICs capable of 30 V and operating at ±15 V supplies while allowing dramatic reductions in power ...
TPS2331 数据资料 dataSheet 下载
... ENABLE or ENABLE – ENABLE for TPS2330 is active-low. ENABLE for TPS2331 is active-high. When the controller is enabled, GATE voltage powers up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2330 or the ENABLE pin is pulled low for TPS2331 for more than 50 µs, the gate of ...
... ENABLE or ENABLE – ENABLE for TPS2330 is active-low. ENABLE for TPS2331 is active-high. When the controller is enabled, GATE voltage powers up to turn on the external MOSFETs. When the ENABLE pin is pulled high for TPS2330 or the ENABLE pin is pulled low for TPS2331 for more than 50 µs, the gate of ...
8-Bit, 250 MSPS 3.3 V A/D Converter AD9480
... To minimize system cost and power dissipation, the AD9480 includes an internal reference and track-and-hold circuit. The user only provides a 3.3 V power supply and a differential encode clock. No external reference or driver components are required for many applications. The digital outputs are LVD ...
... To minimize system cost and power dissipation, the AD9480 includes an internal reference and track-and-hold circuit. The user only provides a 3.3 V power supply and a differential encode clock. No external reference or driver components are required for many applications. The digital outputs are LVD ...
Chapter no. 6 - WordPress.com
... region near Sio2 insulating layer, but minority carriers i.e electrons in p type substrate will be attracted towards gate terminal and gather near the surface of Sio2 as shown in fig. As we increases the VGS the no. of electrons gathering near the Sio2 layer will increases. The electrons concentrati ...
... region near Sio2 insulating layer, but minority carriers i.e electrons in p type substrate will be attracted towards gate terminal and gather near the surface of Sio2 as shown in fig. As we increases the VGS the no. of electrons gathering near the Sio2 layer will increases. The electrons concentrati ...
Radiation Noise Reduction Effect using Capacitor with
... Since the radiation noise from the electronic equipment is regulated in many countries, the effective techniques of radiated noise reduction is needed in the design and manufacturing fields of the equipment. It is well known that the radiated emission from the electronic equipment is often dominated ...
... Since the radiation noise from the electronic equipment is regulated in many countries, the effective techniques of radiated noise reduction is needed in the design and manufacturing fields of the equipment. It is well known that the radiated emission from the electronic equipment is often dominated ...
Valve RF amplifier
A valve RF amplifier (UK and Aus.) or tube amplifier (U.S.), is a device for electrically amplifying the power of an electrical radio frequency signal.Low to medium power valve amplifiers for frequencies below the microwaves were largely replaced by solid state amplifiers during the 1960s and 1970s, initially for receivers and low power stages of transmitters, transmitter output stages switching to transistors somewhat later. Specially constructed valves are still in use for very high power transmitters, although rarely in new designs.