
MM74C89 64-Bit 3-STATE Random Access Read/Write Memory
... prior to the positive to negative transition of memory enable. It is thus not necessary to hold address information stable for more than tHA after the memory is enabled (positive to negative transition of memory enable). Write Operation: Information present at the data inputs is written into the mem ...
... prior to the positive to negative transition of memory enable. It is thus not necessary to hold address information stable for more than tHA after the memory is enabled (positive to negative transition of memory enable). Write Operation: Information present at the data inputs is written into the mem ...
ELECTRIC CIRCUITS I
... • Period is defines as the amount of time is take to go through one cycle. • Period for sinusoidal waveform is equal for each cycle. Cycle • The portion of a waveform contained in one period of time. Frequency (f) • Frequency is defines as number of cycles in one seconds. • It can derives as ...
... • Period is defines as the amount of time is take to go through one cycle. • Period for sinusoidal waveform is equal for each cycle. Cycle • The portion of a waveform contained in one period of time. Frequency (f) • Frequency is defines as number of cycles in one seconds. • It can derives as ...
A Compact Planar Rogowski Coil Current Sensor Silicon Carbide MOSFETs
... connection necessary in high power applications. However, the mismatch of device parameters and external circuits can induce current unbalance in the paralleled devices, and cause uneven distribution of loss and temperature, affecting the performance and reliability of the system [1]. The multiple r ...
... connection necessary in high power applications. However, the mismatch of device parameters and external circuits can induce current unbalance in the paralleled devices, and cause uneven distribution of loss and temperature, affecting the performance and reliability of the system [1]. The multiple r ...
LTC3406/LTC3406-1.5/LTC3406-1.8
... As the input supply voltage decreases to a value approaching the output voltage, the duty cycle increases toward the maximum on-time. Further reduction of the supply voltage forces the main switch to remain on for more than one cycle until it reaches 100% duty cycle. The output voltage will then be ...
... As the input supply voltage decreases to a value approaching the output voltage, the duty cycle increases toward the maximum on-time. Further reduction of the supply voltage forces the main switch to remain on for more than one cycle until it reaches 100% duty cycle. The output voltage will then be ...
差分放大器系列AD8323 数据手册DataSheet 下载
... gain buffer and is followed by a low distortion high power amplifier. The AD8323 accepts a differential or single-ended input signal. The output is specified for driving a 75 Ω load, such as coaxial cable. Distortion performance of –56 dBc is achieved with an output level up to 60 dBmV at 21 MHz ban ...
... gain buffer and is followed by a low distortion high power amplifier. The AD8323 accepts a differential or single-ended input signal. The output is specified for driving a 75 Ω load, such as coaxial cable. Distortion performance of –56 dBc is achieved with an output level up to 60 dBmV at 21 MHz ban ...
10.7 Gbps Active Back-Termination, Differential Laser Diode Driver ADN2525
... provides excellent matching with the output transmission lines while reducing the power dissipation in the output stage. The back-termination in the ADN2525 absorbs signal reflections from the TOSA end of the output transmission lines, enabling excellent optical eye quality to be achieved even when ...
... provides excellent matching with the output transmission lines while reducing the power dissipation in the output stage. The back-termination in the ADN2525 absorbs signal reflections from the TOSA end of the output transmission lines, enabling excellent optical eye quality to be achieved even when ...
Study and Comparison of On-Chip LC Oscillators for Energy Recovery Clocking
... Since there are many different applications of oscillators, their selection depends on the application in which they are used. It is therefore essential to narrow down the oscillators based on the application. This thesis focuses on LC based on-chip Oscillators in CMOS Technology. The motivations fo ...
... Since there are many different applications of oscillators, their selection depends on the application in which they are used. It is therefore essential to narrow down the oscillators based on the application. This thesis focuses on LC based on-chip Oscillators in CMOS Technology. The motivations fo ...
PECL Clocks and Termination
... With so many systems operating with TTL or CMOS logic at 5.0V, designers began using ECL with the positive lead connected to +5.0V and the negative lead grounded. This increased some design and layout needs but it also meant there was one less power supply need in the system. So if ECL is operated ...
... With so many systems operating with TTL or CMOS logic at 5.0V, designers began using ECL with the positive lead connected to +5.0V and the negative lead grounded. This increased some design and layout needs but it also meant there was one less power supply need in the system. So if ECL is operated ...
BQ24105-Q1 数据资料 dataSheet 下载
... portable applications. The bqSWITCHER™ series offers integrated synchronous PWM controller and power FETs, high-accuracy current and voltage regulation, charge preconditioning, charge status, and charge termination, in a small, thermally enhanced ...
... portable applications. The bqSWITCHER™ series offers integrated synchronous PWM controller and power FETs, high-accuracy current and voltage regulation, charge preconditioning, charge status, and charge termination, in a small, thermally enhanced ...
SN65MLVD040 数据资料 dataSheet 下载
... The SN65MLVD040 provides four half-duplex transceivers for transmitting and receiving Multipoint-Low-Voltage Differential Signals in full compliance with the TIA/EIA-899 (M-LVDS) standard, which are optimized to operate at signaling rates up to 250 Mbps. The driver outputs have been designed to supp ...
... The SN65MLVD040 provides four half-duplex transceivers for transmitting and receiving Multipoint-Low-Voltage Differential Signals in full compliance with the TIA/EIA-899 (M-LVDS) standard, which are optimized to operate at signaling rates up to 250 Mbps. The driver outputs have been designed to supp ...
On the Efficacy of Input Vector Control to Mitigate
... modeling, path-based NBTI-aware timing analysis, and gate-level leakage analysis. The simulation flow includes two important factors that affect the accurate estimation of performance degradation: the Ratio of Active time to Standby time (RAS) and the standby time temperature. • We evaluate IVC tech ...
... modeling, path-based NBTI-aware timing analysis, and gate-level leakage analysis. The simulation flow includes two important factors that affect the accurate estimation of performance degradation: the Ratio of Active time to Standby time (RAS) and the standby time temperature. • We evaluate IVC tech ...
TAS5152 数据资料 dataSheet 下载
... The TAS5152 is a third-generation, high-performance, integrated stereo digital amplifier power stage with improved protection system. The TAS5152 is capable of driving a 4-Ω bridge-tied load (BTL) at up to 125 W per channel with low integrated noise at the output, low THD+N performance, and low idle ...
... The TAS5152 is a third-generation, high-performance, integrated stereo digital amplifier power stage with improved protection system. The TAS5152 is capable of driving a 4-Ω bridge-tied load (BTL) at up to 125 W per channel with low integrated noise at the output, low THD+N performance, and low idle ...
Design of a 32.7-GHz bandwidth AGC amplifier ic with wide dynamic
... communications has greatly increased the demand for high-speed communication systems. Optical transmission systems operating at 10 Gb/s have been developed for large capacity networks to meet this demand, and a transmission system as fast as 40 Gb/s is just now being developed. Several component IC’ ...
... communications has greatly increased the demand for high-speed communication systems. Optical transmission systems operating at 10 Gb/s have been developed for large capacity networks to meet this demand, and a transmission system as fast as 40 Gb/s is just now being developed. Several component IC’ ...
The CCB external hardware interfaces
... To meet the settling time constraint, it turns out that it is necessary to use a low-pass filter that is optimized for its time response, rather than its frequency response. This means that a Bessel filter must be used. Table 2.2 lists the pertinent characteristics of practical 2MHz Bessel filters w ...
... To meet the settling time constraint, it turns out that it is necessary to use a low-pass filter that is optimized for its time response, rather than its frequency response. This means that a Bessel filter must be used. Table 2.2 lists the pertinent characteristics of practical 2MHz Bessel filters w ...
SP331 数据资料DataSheet下载
... RS-485 drivers. Control for the mode selection is done via a four–bit control word. The drivers are pre-arranged such that for each mode of operation the relative position and functionality of the drivers are set up to accommodate the selected interface mode. As the mode of the drivers is changed, t ...
... RS-485 drivers. Control for the mode selection is done via a four–bit control word. The drivers are pre-arranged such that for each mode of operation the relative position and functionality of the drivers are set up to accommodate the selected interface mode. As the mode of the drivers is changed, t ...
AD7475 数据手册DataSheet下载
... Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without no ...
... Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without no ...
Overcurrent Protection
... into place. A lead wire is provided to connect the ground side of the module to the load center’s neutral bus. It is best to position the circuit breaker/surge arrestor in the first position of the load center and connect the lead wire in the first neutral position. One device provides protection fo ...
... into place. A lead wire is provided to connect the ground side of the module to the load center’s neutral bus. It is best to position the circuit breaker/surge arrestor in the first position of the load center and connect the lead wire in the first neutral position. One device provides protection fo ...
SiC MOSFET Isolated Gate Driver
... to 17.3V nominal. A base resistor (R16) was included if additional dampening is desired for the emitter follower. In practice, a zero ohm resistor works fine. Resistors R2, R4, R5, R9-R15 and diode D2 can be populated to provide optimum turn-on and turn-off performance. In this case, only R2, R4 ...
... to 17.3V nominal. A base resistor (R16) was included if additional dampening is desired for the emitter follower. In practice, a zero ohm resistor works fine. Resistors R2, R4, R5, R9-R15 and diode D2 can be populated to provide optimum turn-on and turn-off performance. In this case, only R2, R4 ...
NX3P2902B 1. General description Logic controlled high-side power switch
... The NX3P2902B is a high-side load switch which features a low ON resistance P-channel MOSFET. The MOSFET supports more than 500 mA of continuous current and an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is us ...
... The NX3P2902B is a high-side load switch which features a low ON resistance P-channel MOSFET. The MOSFET supports more than 500 mA of continuous current and an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is us ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.