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Implementation of 1-bit Full Adder using Gate Difuision
Implementation of 1-bit Full Adder using Gate Difuision

VLMS-6 - Forman Vehicle Services
VLMS-6 - Forman Vehicle Services

... when connected to a Vseries Vehicle Multi-Message System (VMMS). In Emulation mode, the feedback output is inverted to provide a ground connection while the circuit is operating correctly – this output can be used to control the connection of a ‘bulb emulating’ load resistor, when the controlling ci ...
Video Transcript - Rose
Video Transcript - Rose

PROCEED: Pareto Optimization-based Circuit
PROCEED: Pareto Optimization-based Circuit

... in context of how they are going to be used − Account for various design types and circuit-level optimizations ...
Section 16.4
Section 16.4

... Ilight = 120 V ÷ 240 Ω = 0.5 amps Istereo = 120 V ÷ 150 Ω = 0.8 amps Ia/c = 120 V ÷ 10 Ω = 12 amps ...
Low-Power VLSI Circuit Design
Low-Power VLSI Circuit Design

Paper Title (use style: paper title)
Paper Title (use style: paper title)

... effect, reverse short-channel effect [6]. Among them, the greatest impact is made by the reverse short-channel effect. However, there are still other effects such as channel carrier mobility, process variation, and equivalent gate oxide thickness scaling (EOT). A. Short-channel effect The charges in ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

... structure. Assuming the initial Vout is low, with the P- network on and the N-network off, Vout follows the power clock PC or PCbar which ever swings to the high level. Since the power clock is sinusoid in nature it ramps down which makes the Vout to follow it and generating a floating node. This si ...
Introduction
Introduction

...  For example, a voltage gain of 10 translates to 20 dB.  General amplifier symbols are shown below ...
ideal voltage and current sources
ideal voltage and current sources

... For example, an ideal 5 V source has a voltage of 5 V across its terminals, for currents of 1 mA, 1 A or 1000 A. This behaviour contrasts with a real source, in which the terminal voltage reduces as the current drawn increases. The current drawn from an ideal voltage source depends only on the circu ...
Multi-functional Packaged Antennas for Next
Multi-functional Packaged Antennas for Next

Electrical Measurements and Instruments
Electrical Measurements and Instruments

... With a multimeter, resistance of a component must be measured when the component is isolated (not connected to any other circuit elements or power sources) Voltage measurements require the multimeter to be connected in parallel with the component whose voltage is being measured, while current measur ...
MOSFET Common Source Amplifiers
MOSFET Common Source Amplifiers

Low voltage CMOS 3 to 8 line decoder with 5V tolerant inputs
Low voltage CMOS 3 to 8 line decoder with 5V tolerant inputs

... regard to the supply voltage. This device can be used to interface 5V to 3V system. It combines high speed performance with the true CMOS low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess vo ...
Single-Ended Audio Output Transformer
Single-Ended Audio Output Transformer

Four-Wire TEC Voltage Measurement with the LDT-5900
Four-Wire TEC Voltage Measurement with the LDT-5900

... Four-wire voltage sensing is necessary in high current and high precision temperature control applications where the accuracy of the TEC measurements is critical. In this technical note, results from the four-wire cable characterization are presented, and differences between two-wire and four-wire m ...
Norton`s Theorems
Norton`s Theorems

... Definitions for Norton’s Theorem  Input resistance is the resistance seen by the load when IN = 0A. ...
DC1279 - LT3517EUF Evaluation Kit Quick Start Guide
DC1279 - LT3517EUF Evaluation Kit Quick Start Guide

... CTRL terminal, R6 (zero ohm) pull-up short resistor must be removed and replaced with a re- ...
An overview of power dissipation and control techniques
An overview of power dissipation and control techniques

... short circuits current. The most significant source of dynamic power consumption is the switching activities of the charging and discharging load capacitances when the output changes between high and low logics [17, 18]. Since, there is a simultaneously finite rise and fall time for PMOS and NMOS, b ...
H CMOS Switches Offer High Performance in Low Power, Wideband Applications
H CMOS Switches Offer High Performance in Low Power, Wideband Applications

... of the switch can modulate the Vg, thereby causing distortion products as the on resistance of the switch varies. The use of high control voltages will reduce this effect, but only at the cost of generating voltages of approximately +2 V to –8 V to control the switches. GaAs processes don’t offer co ...
P6A
P6A

... resistance to the flow of electric current). A slider changes the length of the wire that the current has to flow through. The resistance is low when a short length of wire is involved, and it is high when a long length is involved. Ohm’s Law Ohm’s Law relates to current and voltage (potential diffe ...
1.8-V, microPower CMOS Operational Amplifiers, Zero
1.8-V, microPower CMOS Operational Amplifiers, Zero

... DESCRIPTION ...
ht tp: //qpa pe
ht tp: //qpa pe

... At 300 K, the intrinsic carrier concentration of silicon is 1·5 × 10 16 m "3 . If the electron and hole mobilities are 0·13 and 0·05 m2 V "1s"1 , calculate the intrinsic resistivity of ...
Manual.
Manual.

... features of the devices, hence on their operation characteristics. Parameters such as response speed, power – both output and consumption, functional characteristics, supply voltages, prices and many more, are all dependent on and influenced by the manufacturing technology. A rough classification di ...
What is SOI?
What is SOI?

... voltage. For an MOS transistor formed on a bulk silicon wafer, the region around the source and drain junctions need to be depleted of local charge during signal switching. This slows the switching process down. In an MOS transistor formed on an SOI wafer, the entire transistor is in a thin (usually ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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