• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Lecture 20 - inst.eecs.berkeley.edu
Lecture 20 - inst.eecs.berkeley.edu

AD9300 4x1 Wideband Video Multiplexer Data Sheet (Rev. A)
AD9300 4x1 Wideband Video Multiplexer Data Sheet (Rev. A)

SERVICE MANUAL SUPPLEMENT
SERVICE MANUAL SUPPLEMENT

... Many electrical and mechanical parts in this chassis have special characteristics. These characteristics often pass unnoticed and the protection afforded by them cannot necessarily be obtained by using replacement components rated for higher voltage, wattage, etc. Replacement parts that have these s ...
Optimization of a RF CMOS technology for High-Q-Inductors - Mos-AK
Optimization of a RF CMOS technology for High-Q-Inductors - Mos-AK

Comparing Electric and Gravitational Forces
Comparing Electric and Gravitational Forces

lecture21 - SCALE - Brown University
lecture21 - SCALE - Brown University

EZ21951955
EZ21951955

Chapter 14
Chapter 14

Audio power amplifiers
Audio power amplifiers

... A simple amplifier can be constructed using only a few external components (Pout = 2W VCC = 20V) as shown in Figure 1. The input may be from crystal or ceramic pick-ups, cartridge or microphone, or may be from the LM381. Bridge amplifier For an increase in output, two amplifiers may be connected in ...
A curvature calibrated bandgap reference with base–emitter current
A curvature calibrated bandgap reference with base–emitter current

MAX4503/MAX4504 Low-Voltage, Dual-Supply, SPST, CMOS Analog Switches General Description
MAX4503/MAX4504 Low-Voltage, Dual-Supply, SPST, CMOS Analog Switches General Description

... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
Electronics for Artists
Electronics for Artists

6.0 Voltage Regulators
6.0 Voltage Regulators

hmc424lp3 product note
hmc424lp3 product note

... package. The attenuator covers a frequency range from DC to 13 GHz with a typical insertion loss of less than 4 dB. Major attenuation steps are 0.5(LSB), 1, 2, 4, 8, and 16 dB with total attenuation of 31.5 dB. Attenuation accuracy is excellent at ± 0.5 dB typical step error with an IIP3 of +32 dBm. ...
ADM208 数据手册DataSheet 下载
ADM208 数据手册DataSheet 下载

... specifications while using a single digital 5 V supply. The EIA232-E standard requires transmitters that will deliver ±5 V minimum on the transmission channel and receivers that can accept signal levels down to ±3 V. The ADM2xx meet these requirements by integrating step-up voltage converters and le ...
intermediate 1 physics - Deans Community High School
intermediate 1 physics - Deans Community High School

... What does the symbol for a double insulated appliance look like and what two wires does this type of appliance contain? ...
EE100 Sensors and Robotics
EE100 Sensors and Robotics

... of the circuit are connected in a specific manner, the performance of the DigiBot is fixed within a limited range of capability. That means whatever change in performance you wish to effect could only be done by changing the DigiBot circuit, such as changing the circuit connections, adding more gate ...
L6377
L6377

... Under voltage protection (UV) The supply voltage is expected to range from 8 to 35 V. In this range the device operates correctly. Below 8V the overall system has to be considered not reliable. To avoid any misfunctioning the supply voltage is continuously monitored to provide an under voltage prote ...
The Do`s and Don`ts of Using MOS-Gated Transistors
The Do`s and Don`ts of Using MOS-Gated Transistors

Series Circuits
Series Circuits

... entire string would not light. In a series circuit, the current runs through each device. Therefore, if one device is not operational, the circuit remains open, preventing the flow of electricity. Connections Point of excess to a point of deficiency in a path is called an electrical circuit. There a ...
Electricity Review
Electricity Review

... a.Like charges on the balloon and wall cause an attraction between the two. b.Balloons contain a special "atomic glue" that allows them to cling to other objects. ...
Design and Implementation High Speed Low Power Cam
Design and Implementation High Speed Low Power Cam

... full parallel search operation leads to critical challenges in designing a low-power system for high-speed high-capacity CAMs [2]: 1) the power hungry nature due to the high switching activity of the SLs and the MLs and 2) a huge surge-on current (i.e., peak current) occurs at the beginning of the s ...
Worksheets
Worksheets

unit3-1
unit3-1

Lab4
Lab4

... Note that we cannot connect “probe 2” directly across the reference resistor, because the black leads of the probes are internally connected inside the LabPro interface. If the black lead was connected to the right side of the resistor, current would flow through the black leads of both voltage prob ...
< 1 ... 492 493 494 495 496 497 498 499 500 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report