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MULTIPLE CHOICE QUESTIONS FOR CHAPTER 14
All questions have only one correct answer
1.
[a]
[b]
[c]
[d]
In normal operation, the junctions of a p-n-p transistor are:
both forward biased
base-emitter forward biased and base-collector reverse biased
both reverse biased
base-collector forward biased and base- emitter reverse biased
2.
[a]
[b]
[c]
[d]
In normal operation, the junctions of an n-p-n transistor are:
both forward biased
base-emitter forward biased and base collector reverse biased
both reverse biased
base-collector forward biased and base- emitter reverse biased
3.
[a]
[b]
[c]
[d]
The current flow across the base-emitter junction of a p-n-p transistor:
mainly electrons
equal numbers of holes and electrons
mainly holes
the leakage current
4.
[a]
[b]
[c]
[d]
The current flow across the base-emitter junction of an n-p-n transistor consists of
mainly electrons
equal numbers of holes and electrons
mainly holes
the leakage current
5.
[a]
[b]
[c]
[d]
In normal operation an n-p-n transistor connected in common-base configuration has:
the emitter at a lower potential than the base
the collector at a lower potential than the base
the base at a lower potential than the emitter
the collector at a lower potential than the emitter
6.
[a]
[b]
[c]
[d]
In normal operation, a p-n-p transistor connected in common-base configuration has:
the emitter at a lower potential than the base
the collector at a higher potential than the base
the base at a higher potential than the emitter
the collector at a lower potential than the emitter
7.
[a]
[b]
[c]
[d]
If the per unit value of electrons which leave the emitter and pass to the collector is 0.9 in an
n-p-n transistor and the emitter current is 4 mA, then:
the base current is approximately 4.4 mA
the collector current is approximately 3.6 mA
the collector current is approximately 4.4 mA
the base current is approximately 3.6 mA
8.
[a]
[b]
The base region of a p-n-p transistor is:
very thin and heavily doped with holes
very thin and heavily doped with electrons
[c]
[d]
very thin and lightly doped with holes
very thin and lightly doped with electrons
9.
The voltage drop across the base-emitter junction of a p-n-p silicon transistor in normal
operation is about:
200 mV
600 mV
zero
4.4V
[a]
[b]
[c]
[d]
10.
[a]
[b]
[c]
[d]
For a p-n-p transistor:
the number of majority carriers crossing the base emitter junction largely depends on the
collector voltage
in common-base configuration, the collector current is proportional to the collector-base
voltage
in common-emitter configuration, the base current is less than the base current in commonbase configuration
the collector current flow is independent of the emitter current flow for a given value of
collector-base voltage
11. If R L in Figure 1 is short-circuited, the ...
[a] amplifier signal output would fall to zero
[b] collector current would fall to zero
[c] transistor would overload
Figure 1
12. If R2 in Figure 1 is open-circuited the ...
[a] amplifier signal output would fall to zero
[b] operating point would be affected and the signal would distort
[c] input signal would not be applied to the base
Figure 1
13. A voltmeter connected across R E in Figure 1 reads zero. Most probably ...
[a] the transistor base-emitter junction has short-circuited
[b] R L has open-circuited
[c] R2 has short-circuited
14. A voltmeter connected across R L in Figure 1 reads zero. Most probably ...
[a] the V CC supply battery is flat
[b] the base collector junction of the transistor has gone open circuit
[c] R L has open-circuited
15. If R E in Figure 1 is short-circuited the ...
[a] load line would be unaffected
[b] load line would be affected
16.
[a]
[b]
[c]
[d]
With reference to the output characteristics shown in Figure 2, the load line represents a
load resistor of:
1 k
2 k
3 k
0.5 k
Figure 2
17.
[a]
[b]
[c]
[d]
With reference to the output characteristics shown in Figure 2, the no-signal collector
dissipation for the operating point marked P is:
12 mW
15 mW
18 mW
21 mW
Figure 2
18.
[a]
With reference to the output characteristics shown in Figure 2, the greatest permissible
peak input current would be about
30 A
[b]
[c]
[d]
35 A
60 A
80 A
Figure 2
19.
[a]
[b]
[c]
[d]
With reference to the output characteristics shown in Figure 2, the greatest possible peak
output voltage would then be about
5.2 V
6.5 V
8.8 V
13 V
Figure 2
20.
[a]
[b]
[c]
[d]
With reference to the output characteristics shown in Figure 2, the power dissipated in the
load resistor under no-signal conditions is:
16 mW
18 mW
20 mW
22 mW
Figure 2