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Profile Documents Logout
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IC Technology and Device Models
IC Technology and Device Models

Experiment 10: Inverting Amplifier
Experiment 10: Inverting Amplifier

Lecture 5 Slides - Digilent Learn site
Lecture 5 Slides - Digilent Learn site

Metaphor circuits
Metaphor circuits

... imagination and a pile of junk. -Thomas Edison ...
Lecture 1 - Digilent Inc.
Lecture 1 - Digilent Inc.

MAX1916 Low-Dropout, Constant-Current Triple White LED Bias Supply General Description
MAX1916 Low-Dropout, Constant-Current Triple White LED Bias Supply General Description

... resistors used in conventional white LED designs. The MAX1916 uses a single resistor to set the bias current for three LEDs, which are matched to 0.3%. The MAX1916 consumes only 40µA of supply current when enabled and 0.05µA when disabled. The MAX1916’s advantages over ballast resistors include sign ...
Avoiding Op Amp Instability Problems In Single-Supply Applications
Avoiding Op Amp Instability Problems In Single-Supply Applications

... The values of RA and RB should, of course, be as low as feasible; the 100 kΩ values chosen here are intended to conserve supply current, as one might wish to do in a battery-powered application. The bypass capacitor value should also be carefully chosen. With a 100 kΩ/100 kΩ voltage divider for RA ...
Exp_Ohmic Circuit Elements
Exp_Ohmic Circuit Elements

Master Notes
Master Notes

... Get together in groups of 2 or 4 Arrange your sources and loads in various configurations For each configuration, measure the voltage across each source and each load Prove Kirchhoff’s Voltage Law (KVL) by showing that the sum of the voltages around any circuit is zero ...
Inductor Lab (RL and LC circuits)
Inductor Lab (RL and LC circuits)

... 1. Simulate the circuit below. It is known as an LR circuit. L is the symbol for an inductor and R the symbol for a resistor. The mathematics used to describe this circuit is similar to that for the RC circuits we studied earlier. The voltage across an inductor is proportional to the change in curre ...
Unit of electric current
Unit of electric current

Lab #2
Lab #2

... Kirchhoff’s voltage law: the sum of the voltages around a circuit loop must equal zero, when following a consistent measurement direction of voltages for each element around the loop. Kirchhoff’s current law: the sum of all currents into a circuit node must equal zero. In other words, the total curr ...
Proportion of Voltage to Resistance in a Series Circuit
Proportion of Voltage to Resistance in a Series Circuit

... The total resistance, RTotal, of a series circuit is found by adding up the resistance values of the individual resistors. A single voltage, Vs, can be measured across each resistor. There exists a very important relationship between voltage and resistance: In a series electrical circuit with multip ...
SP6648 Evaluation Board Manual
SP6648 Evaluation Board Manual

... 4) Using the LBON - Low Battery Output Function The Low Battery Output function, LBON, is programmed externally by the R3 and R4 resistor divider connected between Vbatt, the LBI input pin and GND. The LBON is an open drain output, which is active low and is pulled up by a 1M resistor R5 to Vout. Wh ...
MAX442 - elektrOnline
MAX442 - elektrOnline

Measuring Electrical Resistance
Measuring Electrical Resistance

... decrease the current through a component in a circuit by a certain amount. ▫ They don't convert electrical energy into anything usable, but they do produce heat as a result. ...
SP4633 1GHz 64 NON SELF OSCILLATING PRESCALER
SP4633 1GHz 64 NON SELF OSCILLATING PRESCALER

... ■ Electrostatic Protection † ...
WBL6_Lecture_Ch18
WBL6_Lecture_Ch18

Design Margin, Reliability and Scaling
Design Margin, Reliability and Scaling

... As transistors switch, some high energy (hot) carriers may be injected into the gate oxide and become trapped there Damaged oxides change I-V: increases current in PMOS and decreases current in NMOS Hot carriers cause circuit wearout as NMOS transistors become too slow Wear is limited by setting max ...
1 - gtbit
1 - gtbit

... 37. The speed of an IM can be varied by variable frequency supply from a static power converter. A simultaneous voltage variation is also effected in order to a. To avoid saturation and provide optimum torque capability b. To decrease the torque pulsations c. To limit peak stator current d. To minim ...
KSA940 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
KSA940 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings

... result in significant injury to the user. ...
conceptutal physics ch.23
conceptutal physics ch.23

MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR
MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR

... For supply voltages greater than 8V the circuit shows a high immunity of the reset output against supply transients of more than 100V/µs. For supply voltages less than 8V supply transients of more than 0.4V/µs can cause a reset signal disturbation. To improve the transient behaviour for supply volta ...
Physics_AP_B_Evans_Day_09_Period_2
Physics_AP_B_Evans_Day_09_Period_2

Component reduced floating ᅡᄆL, ᅡᄆC and ᅡᄆR
Component reduced floating ᅡᄆL, ᅡᄆC and ᅡᄆR

... research topic. The advent of integrated circuits has encouraged the design of synthetic inductors, which can be used instead of the physical inductors in passive filters. Furthermore, physical inductors are usually unwanted passive components in most of the electronic configurations because their cha ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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