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Tutorial #5: Emitter Follower or Common Collector Amplifier Circuit
Tutorial #5: Emitter Follower or Common Collector Amplifier Circuit

... Transistor (bipolar, NPN)” from the “Active Components” menu as shown in Error!   Reference   source   not   found.. For now, we will use the default value of beta (100), but the beta value can be changed by right clicking on the transistor and selected “Edit.” Step 3. Place all wires, resis ...
Intro_Elec 2010
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... • Set up the circuit shown here with two resistors in series • Use the ammeter to measure the current in the circuit – how does it compare with the value you found for the previous circuit? • Would this value change if you placed the ammeter at different points in the circuit? Why? • Can you deduce ...
DC Characteristics of a CMOS Inverter
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... powered down for service or repair. This kind of system can only be achieved when the cards are serviced by hot-swapping them in and out without powering down the entire system. The telecom system is also a kind of high-reliability system. It uses the redundant power supply to improve the system rel ...
Power Slides - The University of Texas at Austin
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... Human body model ! 2000V Machine model ! 200V Note 1: To ensure the high-impedance state during power up or down, OE should be tied to VCC through a pull-up resistor: the minimum value or the resistor is determined by the current-sourcing capability of the driver. ...
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... VDC is set to 48 V. The LM46000 converts this down to 3.3 V. For a line voltage range of 90 VAC to 265 VAC, this design can supply at least 50 mA to the 3.3 V load. The high step-down ratio, possible with the LM46000, allows the 50 mA load to appear as less as 5 mA load to the DC/DC. This permits a ...
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... using a patented autoplex circuit. This signal is then converted to a linear DC output voltage proportional to the angle of the rotor shaft. The digital circuit provides resistance to environmental disturbances such as EMI and RFI, and is ideally suited to the most rigorous industrial applications. ...
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Specification of bias power supply
Specification of bias power supply

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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