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Title of the paper: Times New Roman, Bold
Title of the paper: Times New Roman, Bold

... memories, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will come into play to make it possible. ...
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Electric Circuits II
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... setting. This week, we will replace batteries with power supplies. The power supply does exactly the same job as a battery (it is a constant voltage source), but it will not run down over time. In fact, a power supply and a battery will be represented by the same symbol in our circuit diagrams. We w ...
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Print this article
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... suppress the load current harmonics [6]. The switching devices in VSC1 and VSC2 are insulated-gate bipolar transistors (IGBT) with anti parallel diodes. Cdc provides the common dc- link voltage to VSC1 and VSC2. The proposed UPQC system offers two mode of operation as follows.  VSC1 off and VSC2 on ...
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... particularly high spurious-free dynamic range (SFDR), while operating at high sampling rate [3]. Typical ADC specifications are 25 MHz input bandwidth, more than 100 MHz sampling rate, 12 to 14-bit resolution, and larger than 80 dB in-band SFDR. The time-interleaved configuration shown in Fig. 1 is su ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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