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CMOS VLSI Design CMOS VLSI Design 4th Ed.
CMOS VLSI Design CMOS VLSI Design 4th Ed.

...  Non-ratioed - sizing of the devices does not affect the logic levels  Faster switching speeds – reduced load capacitance due to lower input capacitance (Cin) – reduced load capacitance due to smaller output loading (Cout) – no Isc, so all the current provided by PDN goes into discharging CL ...
HMC747LC3C 数据资料DataSheet下载
HMC747LC3C 数据资料DataSheet下载

... support data transmission rates of up to 14 Gbps, and clock frequencies as high as 14 GHz. During normal operation, data is transferred to the outputs on the positive edge of the clock. Reversing the clock inputs allows for negative-edge triggered applications. All differential inputs to the HMC747L ...
AN1052: Selecting a FET For Use With the Si875x
AN1052: Selecting a FET For Use With the Si875x

Lab 7 Manual: Bipolar Junction Transistor Characteristics
Lab 7 Manual: Bipolar Junction Transistor Characteristics

... Figure 1. (a) NPN transistor symbol, (b) PNP transistor symbol and (c) TO-92 package 2N4400 BJT pin configuration. BJTs are used to amplify current, using a small base current to control a large current between the collector and the emitter. This amplification is so important that one of the most no ...
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... Air-magnetic circuit breakers, which have been successfully used for many years in medium voltage switchgear, do have some problems with switching low currents. These breakers depend on a magnetic field generated by the current flowing through auxiliary coils in the interrupter circuit to drive the ...
Analog Input / Output Modules
Analog Input / Output Modules

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ECE 201 Exam #1 Review

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Elimination of Harmonics Using Active Power Filter Based on

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ECE1250F14_Lab6_Gates CMF

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... Input bias current is specified for two different conditions. The T j = 25∞C specification is with the junction at ambient temperature; the device operating specification is with the device operating in a warmed up condition at 25∞C ambient. The warmed up bias-current value is correlated to the junc ...
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... With Q1 saturated, GND will be provided (via Q1 E-C pins) on the MOTN (W3) signal, and with Q4 saturated, HBDC will be provided (via Q4 E-C pins) on the MOTP (W4) signal, thus causing the external DC motor to spin in the Forward direction in proportion to the RMS voltage of HDBC. With RUN high and i ...
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DG540-2.pdf

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β τ β - Hacettepe University, Department of Electrical and Electronics

... In CRT's, the linearly changing voltage waveform makes the spot of the oscilloscope sweep from the beginning to the end of the fluorescent screen with a constant speed. The period of time taken to cause the spot to deflect across the face of the fluorescent screen is known as the sweep time. When th ...
MAX8633–MAX8636 Dual 300mA Pin-Programmable LDO Linear Regulators General Description
MAX8633–MAX8636 Dual 300mA Pin-Programmable LDO Linear Regulators General Description

... ture range. Output capacitors can be reduced to 1µF for load currents less than 150mA. The MAX8633– MAX8636 are optimized for ceramic capacitors and require low equivalent-series resistance (ESR) to achieve the stated specifications for low-output noise and power-supply rejection. To ensure proper o ...
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... iCoupler Technology The digital signals transmit across the isolation barrier using iCoupler technology. This technique uses chip scale transformer windings to couple the digital signals magnetically from one side of the barrier to the other. Digital inputs are encoded into waveforms that are capabl ...
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RPM971-H14

... The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants cont ...
IM2 - FOE
IM2 - FOE

... showing all the voltages and currents, draw the phasor of VCB (in star connection). Find the phase angle between the voltage and current associated with each wattmeter and hence, calculate the readings of P1 and P2. c) What is the power factor at which the reading of one of the wattmeters would be z ...
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BDTIC www.BDTIC.com/infineon  TLE4946-2L
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... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiven ...
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ROC800-Series Power Input Modules

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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