
ELEC7770 Advanced VLSI Design Spring 2007
... For given input rise and fall times short circuit power decreases as output capacitance increases. Short circuit power increases with increase of input rise and fall times. Short circuit power is reduced if output rise and fall times are smaller than the input rise and fall times. ...
... For given input rise and fall times short circuit power decreases as output capacitance increases. Short circuit power increases with increase of input rise and fall times. Short circuit power is reduced if output rise and fall times are smaller than the input rise and fall times. ...
Data Sheets
... The circuit in Figure 7 controls the lamp starting scenarios: Filament preheat and Lamp Out interrupt. C(X) is charged with a current of IR(SET)/4 and discharged through R(X). The voltage at C(X) is initialized to 0.7V (VBE) at power up. The time for C(X) to rise to 3.4V is the filament preheat time ...
... The circuit in Figure 7 controls the lamp starting scenarios: Filament preheat and Lamp Out interrupt. C(X) is charged with a current of IR(SET)/4 and discharged through R(X). The voltage at C(X) is initialized to 0.7V (VBE) at power up. The time for C(X) to rise to 3.4V is the filament preheat time ...
LP2951JAN Series of Adjustable Micropower
... A 1.0μF (or greater) capacitor is required between the output and ground for stability at output voltages of 5V or more. At lower output voltages, more capacitance is required (2.2μF or more is recommended for 3V and 3.3V versions). Without this capacitor the part will oscillate. Most types of tanta ...
... A 1.0μF (or greater) capacitor is required between the output and ground for stability at output voltages of 5V or more. At lower output voltages, more capacitance is required (2.2μF or more is recommended for 3V and 3.3V versions). Without this capacitor the part will oscillate. Most types of tanta ...
DS91M040 125 MHz Quad M-LVDS Transceiver DS91M040 FEATURES DESCRIPTION
... M-LVDS (Multipoint LVDS) is a new family of bus interface devices based on LVDS technology specifically designed for multipoint and multidrop cable and backplane applications. It differs from standard LVDS in providing increased drive current to handle double terminations that are required in multip ...
... M-LVDS (Multipoint LVDS) is a new family of bus interface devices based on LVDS technology specifically designed for multipoint and multidrop cable and backplane applications. It differs from standard LVDS in providing increased drive current to handle double terminations that are required in multip ...
BAS40 HiRel
... application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information ...
... application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information ...
Capacitor Self
... The multimeter is a basic circuits laboratory tool used to measure the two premier signal variables current (in amperes, A) and voltage (in volts, V) as well as an important element parameter resistance (in ohms,Ω). There are two common types of multimeters, digital (DMM) and analog (AMM). Although ...
... The multimeter is a basic circuits laboratory tool used to measure the two premier signal variables current (in amperes, A) and voltage (in volts, V) as well as an important element parameter resistance (in ohms,Ω). There are two common types of multimeters, digital (DMM) and analog (AMM). Although ...
... the SRAM design. Larger L can give less leakage because of longer channel length, but it adds more load to the bit line. In this design, the L of the access transistors are at their minimum lengths. In order to compensate for the minimum lenghts of the access transistors, the width (W) of the pull d ...
AD8022 (Rev. C)
... The maximum power that can be safely dissipated by the AD8022 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding ...
... The maximum power that can be safely dissipated by the AD8022 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding ...
Power Supply Theory of Operation
... Many low power or low cost DC/DC converters are unregulated circuits. They provide a voltage conversion and in some cases an isolation barrier, but the output level will vary with changes in the input level (line regulation is specified as a % change in VOUT/% change in VIN). A typical unregulated DC ...
... Many low power or low cost DC/DC converters are unregulated circuits. They provide a voltage conversion and in some cases an isolation barrier, but the output level will vary with changes in the input level (line regulation is specified as a % change in VOUT/% change in VIN). A typical unregulated DC ...
DC949 - LT3478EFE-1, LT3478EFE Evaluation Kit Quick Start Guide
... adjusted by changing a single resistor. Please read the datasheet for details on setting the switching frequency and selecting components such as the inductor and capacitors. The maximum rating on VS is 36V. However, in a boost converter, the maximum normal operating voltage of VS is the maximum LED ...
... adjusted by changing a single resistor. Please read the datasheet for details on setting the switching frequency and selecting components such as the inductor and capacitors. The maximum rating on VS is 36V. However, in a boost converter, the maximum normal operating voltage of VS is the maximum LED ...
LT1672/3/4 - 2µA Max, Av >=5 Single, Dual and Quad Over-The-Top Precision Rail-to-Rail Input and Output Op Amps
... The LT1672/LT1673/LT1674 are protected against reverse battery voltages up to 18V. In the event a reverse battery condition occurs, the supply current is typically less than 100nA (inputs grounded and outputs open). For typical single supply applications with ground referred loads and feedback netwo ...
... The LT1672/LT1673/LT1674 are protected against reverse battery voltages up to 18V. In the event a reverse battery condition occurs, the supply current is typically less than 100nA (inputs grounded and outputs open). For typical single supply applications with ground referred loads and feedback netwo ...
1.3 Series DC Circuit, Kirchhoff Voltage Law
... - the double-subscript notation Vab specifies point a as the higher potential. If this is not the case, a negative sign must be associated with the magnitude of Vab. The voltage Vab is the voltage at a point a with respect to point b. ...
... - the double-subscript notation Vab specifies point a as the higher potential. If this is not the case, a negative sign must be associated with the magnitude of Vab. The voltage Vab is the voltage at a point a with respect to point b. ...
Power System Analysis(EEE-601) (PUT Paper
... (a).(Per Unit value of a given quantity is the ratio of the actual value in any given unit to the base value in the same unit. the main advantage in using the pu system of computations is that the result that comes out of the sum, product, quotient, etc. of two or more pu values is expressed in per ...
... (a).(Per Unit value of a given quantity is the ratio of the actual value in any given unit to the base value in the same unit. the main advantage in using the pu system of computations is that the result that comes out of the sum, product, quotient, etc. of two or more pu values is expressed in per ...
ADXRS613 ±50°/sec Yaw Rate Gyroscope Data Sheet (Rev. 0)
... process to create a functionally complete and low cost angular rate sensor integrated with all required electronics on one chip. The manufacturing technique for this device is the same high volume BiMOS process used for high reliability automotive airbag accelerometers. The output signal, RATEOUT (1 ...
... process to create a functionally complete and low cost angular rate sensor integrated with all required electronics on one chip. The manufacturing technique for this device is the same high volume BiMOS process used for high reliability automotive airbag accelerometers. The output signal, RATEOUT (1 ...
DATA SHEET BFQ18A NPN 4 GHz wideband transistor September 1995
... more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods ...
... more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods ...
Tasks - Hrvatski savez informatičara
... Mirko is building a simple logic circuit in his workshop. The circuit consists of n starting wires denoted with x1 , x2 , . . . , xn and m logic elements OR denoted with c1 , c2 , . . . , cm . Each element has exactly two inputs and one output. Each of the inputs is connected to either a starting wi ...
... Mirko is building a simple logic circuit in his workshop. The circuit consists of n starting wires denoted with x1 , x2 , . . . , xn and m logic elements OR denoted with c1 , c2 , . . . , cm . Each element has exactly two inputs and one output. Each of the inputs is connected to either a starting wi ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.