
1. COMMON EMITTER TRANSISTOR CHARACTERISTICS
... required to allow the current through SCR is large. When IG > 0 less amount of break over voltage is sufficient. With very large positive gate currents break over may occur at a very low voltage such that the characteristic of SCR is similar to ordinary PN diode. As the voltage at which SCR is switc ...
... required to allow the current through SCR is large. When IG > 0 less amount of break over voltage is sufficient. With very large positive gate currents break over may occur at a very low voltage such that the characteristic of SCR is similar to ordinary PN diode. As the voltage at which SCR is switc ...
File - King`s Senior Science
... source of Voltage (battery), the task becomes much more complicated. . . ...
... source of Voltage (battery), the task becomes much more complicated. . . ...
FXLA104 Low-Voltage Dual-Supply 4-Bit Voltage Translator with
... Available in 16-Terminal UMLP (1.8mm x 2.6mm) and 12-Terminal, Quad UMLP, 1.8 x 1.8mm ...
... Available in 16-Terminal UMLP (1.8mm x 2.6mm) and 12-Terminal, Quad UMLP, 1.8 x 1.8mm ...
DS90LV012A / DS90LT012A 3V LVDS Single
... The LVDS receiver is a high gain, high speed device that amplifies a small differential signal (20mV) to CMOS logic levels. Due to the high gain and tight threshold of the receiver, care should be taken to prevent noise from appearing as a valid signal. The receiver's internal fail-safe circuitry is ...
... The LVDS receiver is a high gain, high speed device that amplifies a small differential signal (20mV) to CMOS logic levels. Due to the high gain and tight threshold of the receiver, care should be taken to prevent noise from appearing as a valid signal. The receiver's internal fail-safe circuitry is ...
TPS54917 数据资料 dataSheet 下载
... converter offers the same features as the TPS54910 in a smaller package and higher switching frequency, which allows for a smaller total solution. Included on the substrate with the listed features are a true, high performance, voltage error amplifier that enables maximum performance under transient ...
... converter offers the same features as the TPS54910 in a smaller package and higher switching frequency, which allows for a smaller total solution. Included on the substrate with the listed features are a true, high performance, voltage error amplifier that enables maximum performance under transient ...
osc/INTELLIMETER
... service couplers. Low voltage service couplers are required to establish communication paths around transformers, between separate services, etc. ...
... service couplers. Low voltage service couplers are required to establish communication paths around transformers, between separate services, etc. ...
LIOB‑100/101/102/103
... Input Impedance 10 kΩ, sampling period < 1 s. Resistors in the range of 1 kΩ to 100 kΩ can be measured. For popular temperature sensors (e.g. Pt1000, NTC10K, NTC1K8, Ni1000) fixed internal translation tables are provided. For all other temperature sensors, translation tables can be defined in the co ...
... Input Impedance 10 kΩ, sampling period < 1 s. Resistors in the range of 1 kΩ to 100 kΩ can be measured. For popular temperature sensors (e.g. Pt1000, NTC10K, NTC1K8, Ni1000) fixed internal translation tables are provided. For all other temperature sensors, translation tables can be defined in the co ...
LM111/LM211/LM311 Voltage Comparator
... groundplane under the LM111 circuitry, for example, one side of a double-layer circuit card. Ground foil (or, positive supply or negative supply foil) should extend between the output and the inputs, to act as a guard. The foil connections for the inputs should be as small and compact as possible, a ...
... groundplane under the LM111 circuitry, for example, one side of a double-layer circuit card. Ground foil (or, positive supply or negative supply foil) should extend between the output and the inputs, to act as a guard. The foil connections for the inputs should be as small and compact as possible, a ...
Bates
... ac is more efficient in distribution from the generating station. House wiring uses 3-wire, single-phase power. The voltages for house wiring are 120 V to ground, and 240 V across the two high sides. A value higher than 120 V would create more danger of fatal electric shock, but lower voltages ...
... ac is more efficient in distribution from the generating station. House wiring uses 3-wire, single-phase power. The voltages for house wiring are 120 V to ground, and 240 V across the two high sides. A value higher than 120 V would create more danger of fatal electric shock, but lower voltages ...
PCA9306 Dual Bidirectional I2C Bus and
... The PCA9306 can also be used to run two buses, one at 400-kHz operating frequency and the other at 100-kHz operating frequency. If the two buses are operating at different frequencies, the 100-kHz bus must be isolated by using the EN pin when the 400-kHz operation of the main bus is required. If the ...
... The PCA9306 can also be used to run two buses, one at 400-kHz operating frequency and the other at 100-kHz operating frequency. If the two buses are operating at different frequencies, the 100-kHz bus must be isolated by using the EN pin when the 400-kHz operation of the main bus is required. If the ...
www.BDTIC.com/TI Implications of Slow or Floating CMOS Inputs SCBA004C
... BCT, FB, GTL, and LVT) logic families have further strengthened their position in the semiconductor market. New designs have adopted both technologies in almost every system that exists, whether it is a PC, a workstation, or a digital switch. The reason is obvious: power consumption is becoming a ma ...
... BCT, FB, GTL, and LVT) logic families have further strengthened their position in the semiconductor market. New designs have adopted both technologies in almost every system that exists, whether it is a PC, a workstation, or a digital switch. The reason is obvious: power consumption is becoming a ma ...
ADG417 数据手册DataSheet下载
... Most positive power supply potential. Most negative power supply potential in dual supplies. In single supply applications, it may be connected to GND. Logic power supply (+5 V). ...
... Most positive power supply potential. Most negative power supply potential in dual supplies. In single supply applications, it may be connected to GND. Logic power supply (+5 V). ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.