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Series and Parallel Circuits
Series and Parallel Circuits

DC4201704708
DC4201704708

... The electrical energy available in the utility grid is not suitable for direct use in many applications. In particular, applications requiring DC source must involve an interface device between the AC power line and the load requiring the DC voltage. Conventional AC/DC conversion involves diode rect ...
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BAS70 HiRel 
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... application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information ...
AD834 数据手册DataSheet 下载
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... single-ended ground referenced voltage output, some form of external current to voltage conversion is needed. This may take the form of a wideband transformer, balun, or active circuitry such as an op amp. In some applications (such as power measurement) the subsequent signal processing may not need ...
SDA-5000 - RFMD.com
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... RF Output. 50Ω microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. Connect the DC bias (VDD) network to provide drain current (IDD). ...
Single Phase PV Inverter Applying a Dual Boost Technology
Single Phase PV Inverter Applying a Dual Boost Technology

... harmonics and equipments can be operated smoothly. But these inverters are costly. Pulse width modulation (PWM) is a powerful technique for controlling analog circuits with a processor's digital outputs. It is a very useful technique and has wide applications in measurement and communications areas ...
TPS64200 数据资料 dataSheet 下载
TPS64200 数据资料 dataSheet 下载

... discontinuous mode is normal and does not have any influence on efficiency. The ringing does not contain much energy and can easily be damped by an RC snubber. See the application section for further details. With high output current, the TPS6420x operate in continuous current mode. In this mode, th ...
ISL6840, ISL6841, ISL6842, ISL6843, ISL6844, ISL6845 Datasheet
ISL6840, ISL6841, ISL6842, ISL6843, ISL6844, ISL6845 Datasheet

... timing capacitor, CT, from this pin to GND. The oscillator produces a sawtooth waveform with a programmable frequency range up to 2.0MHz. The charge time, tC, the discharge time, tD, the switching frequency, f, and the maximum duty cycle, Dmax, can be calculated from Equations 1, 2, 3 and 4: ...
Audio PreAmp ICs
Audio PreAmp ICs

... (Q3-Q6), output stage (Q7-QIO), and bias network (Qll-Q15); Fig. 5 shows a simplified equivalent. The first stage is biased at 1.2 volts via RI, and can be operated either differentially or single-ended, although differential operation generates 41% more noise. In differential use, the first stage h ...
AN-911 APPLICATION NOTE  Tiger
AN-911 APPLICATION NOTE Tiger

... these capacitor values still work at higher input voltages. ...
Electric circuits Circuits – Think like an electron
Electric circuits Circuits – Think like an electron

... a) Across battery: Measure of EPE given to each e- as it passes through battery. EPE given = eV. Related to pushing force on electrons in circuit b) Across a resistor (wire, filament etc): Measure of EPE lost by each e- as it passes through. EPE lost = eV. Unless told otherwise voltage difference ac ...
Deluxe Stereo Amplifier Build Instructions
Deluxe Stereo Amplifier Build Instructions

... At the centre of the circuit is an audio amplifier Integrated Circuit or IC. Inside the IC are lots of transistors, which are connected together to allow the small input signal to be amplified into a more powerful output that can drive a speaker. All amplifiers need to use feedback to ensure the amo ...
ppt
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... other go the other way. Now you have much more room because there are only half as many people in the hallway. What would happen if the hallway was to split again? And again? Would you have more and more room to walk each time? If you have more room would it be easer for you to walk down the hallway ...
INA125 数据资料 dataSheet 下载
INA125 数据资料 dataSheet 下载

... of the INA125. Applications with noisy or high impedance power supplies may require decoupling capacitors close to the device pins as shown. The output is referred to the instrumentation amplifier reference (IAREF) terminal which is normally grounded. This must be a low impedance connection to assur ...
RF5225 2.4GHz TO 2.5GHz, 802.11B/G/N WiFi FRONT END MODULE Features
RF5225 2.4GHz TO 2.5GHz, 802.11B/G/N WiFi FRONT END MODULE Features

... The RF5225 FEM is a single-chip integrated front-end module (FEM) for high performance WiFi applications in the 2.4GHz to 2.5GHz ISM band. The FEM addresses the need for aggressive size reduction for a typical 802.11b/g RF front-end design and greatly reduces the number of components outside of the ...
Electrical Circuits: Ohm`s Law
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DG417/DG418/DG419 Improved, SPST/SPDT Analog Switches _______________General Description ______________________New Features
DG417/DG418/DG419 Improved, SPST/SPDT Analog Switches _______________General Description ______________________New Features

... 12 __________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600 © 1996 Maxim Integrated Products ...
TPS60204 数据资料 dataSheet 下载
TPS60204 数据资料 dataSheet 下载

... The regulator enters the pulse-skip mode when the output current is lower than the LinSkip current threshold of 7 mA. In the pulse-skip mode, the error amplifier disables switching of the power stages when it detects an output voltage higher than 3.3 V. The controller skips switching cycles until th ...
MC12015 MC12016 MC12017 Dual Modulus Prescaler
MC12015 MC12016 MC12017 Dual Modulus Prescaler

... the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters ...
electric current
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Forward and Reflected Powers. What Do They

No Slide Title
No Slide Title

DCI I-V Characteristics
DCI I-V Characteristics

... 3. For the resistor only, graph the V vs I characteristic curve and determine the best average value of R by using a trend line determination with I as the independent variable (x axis), and V as the dependent variable (y axis). (Does the trend line have a y-intercept equal to zero?). Include the r ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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