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RL Lab - Jinkser
RL Lab - Jinkser

EE369 POWER SYSTEM ANALYSIS
EE369 POWER SYSTEM ANALYSIS

... Compensated circuit is identical to first example with just real power load. Supply voltage magnitude and line current is lower with compensation. ...
Chapter 19 Concept Tests - University of Colorado Boulder
Chapter 19 Concept Tests - University of Colorado Boulder

... A long time after the switch has been closed, what is the voltage across the capacitor? A) 5V B) 10 V C) zero D) None of these. Answers: Right after the switch is closed, VC = 0. Before the switch is closed, the charge Q on the capacitor is zero and the voltage across the capacitor = V = Q/C = 0. Ri ...
Electricity and Electronics Module
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... The volt is a measure of electric potential. Electrical potential is a type of potential energy, and refers to the energy that could be released if electric current is allowed to flow. The SI* unit of voltage is the Volt. E= Electro-motive Force; the voltage developed by any source of electrical ene ...
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... pro is plugged in. There should be a green LED lit up on the Logger Pro and you should have heard it beep several times when turning on. If it is still not detected, contact the instructor or the lab supervisor. Sensors not detected: Make sure they are plugged in to the correct side of the Logger Pr ...
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali  Burak Ozpineci
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali Burak Ozpineci

Dr. Sahar Abd El Moneim Moussa - Pharos University in Alexandria
Dr. Sahar Abd El Moneim Moussa - Pharos University in Alexandria

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AD633 Low Cost Analog Multiplier

... Multiplier errors consist primarily of input and output offsets, scale factor error, and nonlinearity in the multiplying core. The input and output offsets can be eliminated by using the optional trim of Figure 2. This scheme reduces the net error to scale factor errors (gain error) and an irreducib ...
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... Itis recommended that a 1MΩ be used for R1, which is connected between V OUTand VSET. With this in mind, some common values for VOUT would result in the following R2 values: For VOUT = 3.3V, R2 = 578.9kΩ (576kΩ std) For VOUT = 4.1V, R2 = 418.7kΩ (417kΩ std) For VOUT = 4.2V, R2 = 404.7kΩ (407kΩ std) ...
AD633 - Department of Electrical Engineering at the University of
AD633 - Department of Electrical Engineering at the University of

... Multiplier errors consist primarily of input and output offsets, scale factor error, and nonlinearity in the multiplying core. The input and output offsets can be eliminated by using the optional trim of Figure 2. This scheme reduces the net error to scale factor errors (gain error) and an irreducib ...
Institutionen för systemteknik Department of Electrical Engineering Applications
Institutionen för systemteknik Department of Electrical Engineering Applications

... 2.5 V, and low-voltage, thin oxide MOS transistors for a nominal supply voltage of 1.1 V. The two transistor types have two flavors each—general purpose (gp), and low power (lp). The low power transistors have thicker gate oxides to provide low gate leakage currents for non-speed critical circuit pa ...
KBIC DC Motor Speed Control Simplified
KBIC DC Motor Speed Control Simplified

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... Trajectory of a n-transistor operating point  If the designer wants to have both n an p transistor with the same rise and fall time: βn / βp = 1  This implies that channel width for the p-device must be increased to approximately two to three times of the n-device: wp = 2 – 3 wn polysilicon gate ...
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... 1) To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM® 45 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 3) ...
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... The DAC8512 has a separate serial input register from the 12-bit DAC register that allows preloading of a new data value into the serial register without disturbing the present DAC output voltage. After the new value is fully loaded in the serial input register it can be asynchronously transferred t ...
Lecture 05 DC Sources, Energy and Power
Lecture 05 DC Sources, Energy and Power

INA121 数据资料 dataSheet 下载
INA121 数据资料 dataSheet 下载

... If the differential source resistance is low, the bias current return path can be connected to one input (see the thermocouple example in Figure 3). With higher source impedance, using two resistors provides a balanced input with possible advantages of lower input offset voltage due to bias current ...
Lecture 05 DC Sources, Energy and Power
Lecture 05 DC Sources, Energy and Power

... accumulate at the negative electrode of the cell. This gives rise to a potential difference between the two terminals of the battery, which results in an emf or electric field across the resistive load connected between them. The emf then causes the electrons to flow in the external electric circui ...
Digital Logic
Digital Logic

Examples of SoC and SiP System-on-Chip
Examples of SoC and SiP System-on-Chip

Parallel and Series-Parallel Circuit Characteristics
Parallel and Series-Parallel Circuit Characteristics

Series and Parallel Circuits
Series and Parallel Circuits

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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