
A Multi-Channel Discriminator IC George Engel IC Design Research Laboratory
... The design presented herein is similar to the discriminator circuit currently being used in our group’s HINP4 IC which in turn is based on a design described in [1]. The design presented in [1] describes a design carried out in 1.2 micron CMOS and boasts timing walk for 5 ns risetime signals over th ...
... The design presented herein is similar to the discriminator circuit currently being used in our group’s HINP4 IC which in turn is based on a design described in [1]. The design presented in [1] describes a design carried out in 1.2 micron CMOS and boasts timing walk for 5 ns risetime signals over th ...
LM1084 5A Low Dropout Positive Regulators (Rev. F)
... the internal resistance between the adjustment and output terminals limits the current. No diode is needed to divert the current around the regulator even with a capacitor on the adjustment terminal. The adjust pin can take a transient signal of ±25V with respect to the output voltage without damagi ...
... the internal resistance between the adjustment and output terminals limits the current. No diode is needed to divert the current around the regulator even with a capacitor on the adjustment terminal. The adjust pin can take a transient signal of ±25V with respect to the output voltage without damagi ...
Switched-Capacitor Voltage Converters _______________General Description ____________________________Features
... positive terminal of C1 to ground and shifts the negative terminal to VOUT. This connects C1 in parallel with the reservoir capacitor C2. If the voltage across C2 is smaller than the voltage across C1, then charge flows from C1 to C2 until the voltages across them are equal. During successive cycles ...
... positive terminal of C1 to ground and shifts the negative terminal to VOUT. This connects C1 in parallel with the reservoir capacitor C2. If the voltage across C2 is smaller than the voltage across C1, then charge flows from C1 to C2 until the voltages across them are equal. During successive cycles ...
ADP220 数据手册DataSheet 下载
... Junction-to-ambient thermal resistance (θJA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to ...
... Junction-to-ambient thermal resistance (θJA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to ...
ADM3485E 数据手册DataSheet 下载
... ±15 kV ESD protection, suitable for half-duplex communication on multipoint bus transmission lines. The ADM3485E is designed for balanced data transmission and complies with TIA/EIA standards RS485 and RS-422. The ADM3485E is a half-duplex transceiver that shares differential lines and has separate ...
... ±15 kV ESD protection, suitable for half-duplex communication on multipoint bus transmission lines. The ADM3485E is designed for balanced data transmission and complies with TIA/EIA standards RS485 and RS-422. The ADM3485E is a half-duplex transceiver that shares differential lines and has separate ...
Document
... current level IL at timet2 . Thus the presence of D2 has accelerated the discharge of capacitor ‘C’. Now the capacitor gets charged through the load and the charging current is constant. ...
... current level IL at timet2 . Thus the presence of D2 has accelerated the discharge of capacitor ‘C’. Now the capacitor gets charged through the load and the charging current is constant. ...
Electrical Engineering Full Day Lesson Plan
... electrons. So now, everyone blow as hard as you can into the little straw. Blow harder harder!!! So you feel how the straw is resisting the flow of air through the straw. Now take the large straw and do the same thing. Was that easier or harder to do? Which one provides more resistance? The smaller ...
... electrons. So now, everyone blow as hard as you can into the little straw. Blow harder harder!!! So you feel how the straw is resisting the flow of air through the straw. Now take the large straw and do the same thing. Was that easier or harder to do? Which one provides more resistance? The smaller ...
6/98 - UCSD VLSI CAD Laboratory
... Experiment 1: (Exercises 1-4, chapter 7) Comparator 1) Follow the pinout diagram (see Fig 7.5 in chapter 7) of LM741CN chip. Place the chip on the protoboard and complete the voltage comparator circuit as shown in Fig 2.1 below. Power the op-amp to + (-) 5V using the + (-) 20 V power supply with pro ...
... Experiment 1: (Exercises 1-4, chapter 7) Comparator 1) Follow the pinout diagram (see Fig 7.5 in chapter 7) of LM741CN chip. Place the chip on the protoboard and complete the voltage comparator circuit as shown in Fig 2.1 below. Power the op-amp to + (-) 5V using the + (-) 20 V power supply with pro ...
MECHANIC MEDICAL ELECTRONICS Central Staff Training and Research Institute
... observe the response. Identify, Test and measure capacitance of various capacitors. Monitor RC ckt behavior by applying different voltages and frequencies Measure Time constant for different values of R and C. Measure the V, I of a RLC series and parallel ckts at resonant frequencies. Find the reson ...
... observe the response. Identify, Test and measure capacitance of various capacitors. Monitor RC ckt behavior by applying different voltages and frequencies Measure Time constant for different values of R and C. Measure the V, I of a RLC series and parallel ckts at resonant frequencies. Find the reson ...
AD8651
... distortion, rail-to-rail CMOS operational amplifiers that run from a single-supply voltage of 2.7 V to 5.5 V. The AD865x family is made up of rail-to-rail input and output amplifiers with a gain bandwidth of 50 MHz and a typical voltage offset of 100 μV across common mode from a 5 V supply. It also ...
... distortion, rail-to-rail CMOS operational amplifiers that run from a single-supply voltage of 2.7 V to 5.5 V. The AD865x family is made up of rail-to-rail input and output amplifiers with a gain bandwidth of 50 MHz and a typical voltage offset of 100 μV across common mode from a 5 V supply. It also ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.