867B,863
... Each Fluke product is warranted to be free from defects in material and workmanship under normal use and service. The warranty period is three years and begins on the date of shipment. Parts, product repairs and services are warranted for 90 days. This warranty extends only to the original buyer or ...
... Each Fluke product is warranted to be free from defects in material and workmanship under normal use and service. The warranty period is three years and begins on the date of shipment. Parts, product repairs and services are warranted for 90 days. This warranty extends only to the original buyer or ...
ECE3155_Ex_3_Diodes
... 1. Plot the forward and reverse characteristics of diodes “A” and the Zener. Use the circuit shown in Figure 1. For the voltage source VSS shown in the figure, use the DC power supply in the lab station. Vary this source over the range –20[V] < VSS < 20[V]. This will mean switching the power supply ...
... 1. Plot the forward and reverse characteristics of diodes “A” and the Zener. Use the circuit shown in Figure 1. For the voltage source VSS shown in the figure, use the DC power supply in the lab station. Vary this source over the range –20[V] < VSS < 20[V]. This will mean switching the power supply ...
TDA8596 1. General description I
... To prevent the amplifier from producing switch-on and switch-off pop noise, the capacitor on the SVR pin is used for smooth start-up and shut-down sequences. Larger capacitors will lead to longer (smoother) start-up and shut-down sequences. Initially the amplifier outputs are charged to Half Supply ...
... To prevent the amplifier from producing switch-on and switch-off pop noise, the capacitor on the SVR pin is used for smooth start-up and shut-down sequences. Larger capacitors will lead to longer (smoother) start-up and shut-down sequences. Initially the amplifier outputs are charged to Half Supply ...
1 Series, 2 Series, 3 Series, and 4 Series Li-Ion
... The bq40z50 provides software-based 1st- and 2nd-level safety protection against overvoltage, undervoltage, overcurrent, short-circuit current, overload, and overtemperature conditions, as well as other pack- and cellrelated faults. SHA-1 authentication, with secure memory for authentication keys, e ...
... The bq40z50 provides software-based 1st- and 2nd-level safety protection against overvoltage, undervoltage, overcurrent, short-circuit current, overload, and overtemperature conditions, as well as other pack- and cellrelated faults. SHA-1 authentication, with secure memory for authentication keys, e ...
AN-366 Designer`s Encyclopedia of One
... When connecting the REXT and CEXT timing elements, care must be taken to put these components as close to the device pins as possible, electrically and physically. Any distance between the timing components and the device will cause time-errors in the resulting pulse width. This is because the serie ...
... When connecting the REXT and CEXT timing elements, care must be taken to put these components as close to the device pins as possible, electrically and physically. Any distance between the timing components and the device will cause time-errors in the resulting pulse width. This is because the serie ...
Intrinsically safe input circuit
... amplifier with intrinsically safe input circuits. Each channel has one relay output with two sets of hard gold-plated contacts. This allows reliable switching of circuits with minimum currents of 50 µA and maximum currents up to 2 A. ...
... amplifier with intrinsically safe input circuits. Each channel has one relay output with two sets of hard gold-plated contacts. This allows reliable switching of circuits with minimum currents of 50 µA and maximum currents up to 2 A. ...
ON Thyristor Application Note
... The connections between the two transistors trigger the occurrence of regenerative action when a proper gate signal is applied to the base of the NPN transistor. Normal leakage current is so low that the combined hFE of the specially coupled two-transistor feedback amplifier is less than unity, thus ...
... The connections between the two transistors trigger the occurrence of regenerative action when a proper gate signal is applied to the base of the NPN transistor. Normal leakage current is so low that the combined hFE of the specially coupled two-transistor feedback amplifier is less than unity, thus ...
LTC5564 - UltraFast 7ns Response Time 15GHz RF Power Detector with Comparator.
... gain-selectable operational amplifier, and fast comparator are combined in a small 16-lead 3mm × 3mm QFN package. The RF input signal is peak detected and then sensed by both a comparator and amplifier. The comparator provides a 9ns response time to input levels exceeding VREF along with a latch ena ...
... gain-selectable operational amplifier, and fast comparator are combined in a small 16-lead 3mm × 3mm QFN package. The RF input signal is peak detected and then sensed by both a comparator and amplifier. The comparator provides a 9ns response time to input levels exceeding VREF along with a latch ena ...
74CBTLV3245 1. General description 8-bit bus switch with output enable
... Rev. 2 — 15 December 2011 ...
... Rev. 2 — 15 December 2011 ...
Wires - Massachusetts Institute of Technology
... coupling capacitance effectively doubles – Miller effect If A switches in same direction while B switches, coupling capacitance disappears These effects can lead to large variance in possible delay of B driver, possibly factor of 5 or 6 between best and worst case ...
... coupling capacitance effectively doubles – Miller effect If A switches in same direction while B switches, coupling capacitance disappears These effects can lead to large variance in possible delay of B driver, possibly factor of 5 or 6 between best and worst case ...
INA226-Q1 Automotive Grade, 36-V, Bi-Directional
... IN– pins. The device can also measure the power supply bus voltage by connecting this voltage to the VBUS pin. The differential shunt voltage is measured with respect to the IN– pin while the bus voltage is measured with respect to ground. The device is typically powered by a separate supply that ca ...
... IN– pins. The device can also measure the power supply bus voltage by connecting this voltage to the VBUS pin. The differential shunt voltage is measured with respect to the IN– pin while the bus voltage is measured with respect to ground. The device is typically powered by a separate supply that ca ...
Introduction to Digital Power Conversion
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
WCL488 Series 402828 Rev B1
... NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when equipment is operated in a commercial environment. This equipment ...
... NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when equipment is operated in a commercial environment. This equipment ...
Components in Sensing Circuits Word Document
... bulbs in the Alpha Kit. Such bulbs are designed to work on a 6V supply. When 6V is applied across a bulb, its filament offers sufficient resistance to keep the current down to 0.06A and the bulb lights up to its specified brightness. At working temperature, the filament provides a resistance of abou ...
... bulbs in the Alpha Kit. Such bulbs are designed to work on a 6V supply. When 6V is applied across a bulb, its filament offers sufficient resistance to keep the current down to 0.06A and the bulb lights up to its specified brightness. At working temperature, the filament provides a resistance of abou ...
Application Note No. 060
... (f2-f1) is. Therefore as input test tones f1 and f2 come closer together, more capacitance is needed to achieve best possible bypassing of the low frequency product (f2-f1). For a test tone separation of 1 MHz, 0.1 µF was found to be more than adequate in this particular application circuit. A good ...
... (f2-f1) is. Therefore as input test tones f1 and f2 come closer together, more capacitance is needed to achieve best possible bypassing of the low frequency product (f2-f1). For a test tone separation of 1 MHz, 0.1 µF was found to be more than adequate in this particular application circuit. A good ...
Chapter 3 Amplifiers with Active Loads – CMOS Amplifiers
... also note that the I-V curves are not so flat as we wished. Therefore, we cannot expect a very high gain with this kind of simple CMOS circuits. As we shall learn in later chapters, the gain can be higher if we use a cascode design. Experiment 3.2-4 The Gain with the Same Bias Voltages in Experiment ...
... also note that the I-V curves are not so flat as we wished. Therefore, we cannot expect a very high gain with this kind of simple CMOS circuits. As we shall learn in later chapters, the gain can be higher if we use a cascode design. Experiment 3.2-4 The Gain with the Same Bias Voltages in Experiment ...
TDA8023 1. General description Low power IC card interface
... The voltage supervisor surveys the VDD supply voltage. It is used as Power-On Reset (POR) and as supply dropout detection during a card session. Supply dropout detection ensures that a proper deactivation sequence is followed before the voltage is too low. A reset pulse of duration tW (see Figure 4) ...
... The voltage supervisor surveys the VDD supply voltage. It is used as Power-On Reset (POR) and as supply dropout detection during a card session. Supply dropout detection ensures that a proper deactivation sequence is followed before the voltage is too low. A reset pulse of duration tW (see Figure 4) ...
LIEBA Basic Electronics and Electricity Integrated Laboratory Technical Teaching Equipment
... We present a flexible and modular-based system for learning basic electronics, basic electricity and circuit theory. The advantage given by this learning and teaching system is that the student establishes his own rhythm, thus rendering unnecessary to keep pace with the rest of the class. Any desire ...
... We present a flexible and modular-based system for learning basic electronics, basic electricity and circuit theory. The advantage given by this learning and teaching system is that the student establishes his own rhythm, thus rendering unnecessary to keep pace with the rest of the class. Any desire ...
PDF
... coupling capacitance effectively doubles – Miller effect If A switches in same direction while B switches, coupling capacitance disappears These effects can lead to large variance in possible delay of B driver, possibly factor of 5 or 6 between best and worst case ...
... coupling capacitance effectively doubles – Miller effect If A switches in same direction while B switches, coupling capacitance disappears These effects can lead to large variance in possible delay of B driver, possibly factor of 5 or 6 between best and worst case ...
MAX11163 16-Bit, 250ksps, +5V Unipolar Input, SAR ADC, in Tiny 10-Pin µMAX
... Serial Data Input and Mode Select Input. Daisy-chain mode is selected if SDI is low during the CNVST rising edge. In this mode, SDI is used as a data input to daisy-chain the conversion results of two or more ADCs onto a single SDO line. CS mode is selected if SDI is high during the CNVST rising edg ...
... Serial Data Input and Mode Select Input. Daisy-chain mode is selected if SDI is low during the CNVST rising edge. In this mode, SDI is used as a data input to daisy-chain the conversion results of two or more ADCs onto a single SDO line. CS mode is selected if SDI is high during the CNVST rising edg ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.