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INA226 - Texas Instruments
INA226 - Texas Instruments

Magnetic Sensors Line Guide
Magnetic Sensors Line Guide

... and surface-mount (SOT-23 and SOT-89B) packages • Cost effective Benefits: Enhanced sensitivity often allows for use of smaller, less expensive magnets. Built-in pull-up resistor easily interfaces with common electronic circuits without adding external components, helping to reduce total system cost ...
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... The THS770006 is a fixed-gain of +6dB, wideband, fully-differential amplifier designed and optimized specifically for driving 16-bit analog-to-digital converters (ADCs) at input frequencies up to 130MHz, and 14-bit ADCs at input frequencies up to 200MHz. This device provides high bandwidth, high-vol ...
Fundamentals of Direct Current Circuits
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WSLT2512 Power Metal Strip® Resistors, High Temperature (275
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... If there is danger of serious accident resulting from a failure or defect in this unit, power off the system and separate the electrical connection of the device from the system. The unit is normally supplied without a power switch or a fuse. Use power switch and fuse as required. Be sure to use the ...
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... LED VOLTAGES depend on many factors. You must test the LED(s) you are using. The voltage across some LEDs increases by 500mV (0.5v) when the current increases from about 10mA to 25-30mA and if you have 6 LEDs in series, this is an increase of 3v. If you are using a 12v supply, you will need to remov ...
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A complementarity approach to modeling dynamic electric circuits
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OPER_MAN A1010 (English)
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TPL5110 Nano-power System Timer for Power

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AD7933 数据手册DataSheet下载
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... featuring Dynamic Self−Supply (DSS). This device is pin−to−pin compatible with the previous NCP12xx families. The DSS function greatly simplifies the design of the auxiliary supply and the VCC capacitor by activating the internal startup current source to supply the controller during transients. Due ...
ADL5367 数据手册DataSheet 下载
ADL5367 数据手册DataSheet 下载

... used in TDD applications where it is desirable to rapidly switch between two local oscillators. LO current can be externally set using a resistor to minimize dc current commensurate with the desired level of performance. For low voltage applications, the ADL5367 is capable of operation at voltages d ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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