
LT6558 - 550MHz, 2200V/µs Gain of 1, Single Supply Triple Video Amplifier with Input Bias Control
... The LT®6558 is a high speed triple video amplifier with an internal fixed gain of 1 and a programmable DC input bias voltage. This amplifier features a 400MHz 2VP-P signal bandwidth, 2200V/µs slew rate and a unique ability to drive heavy output loads to 0.8V of the supply rails, making the LT6558 ideal ...
... The LT®6558 is a high speed triple video amplifier with an internal fixed gain of 1 and a programmable DC input bias voltage. This amplifier features a 400MHz 2VP-P signal bandwidth, 2200V/µs slew rate and a unique ability to drive heavy output loads to 0.8V of the supply rails, making the LT6558 ideal ...
EVAL-ADE7752AEBZ 数据手册DataSheet 下载
... that is, when the phase angle between the voltage and the current signals is greater than 90°. This output is not latched and is reset when positive power is once again detected. See the Negative Power Information section. Analog Inputs for Current Channel. This channel is intended for use with the ...
... that is, when the phase angle between the voltage and the current signals is greater than 90°. This output is not latched and is reset when positive power is once again detected. See the Negative Power Information section. Analog Inputs for Current Channel. This channel is intended for use with the ...
PDF
... the SPV system, and semiconductor material such as silicon and germanium are the building block of SPV cell. When a SPV module is exposed to sunlight it produces electric power if connected to a suitable load. Basically solar cell is a PN junction and when sunlight (photon) is allowed to fall on the ...
... the SPV system, and semiconductor material such as silicon and germanium are the building block of SPV cell. When a SPV module is exposed to sunlight it produces electric power if connected to a suitable load. Basically solar cell is a PN junction and when sunlight (photon) is allowed to fall on the ...
TL783 数据资料 dataSheet 下载
... DMOS output transistor capable of sourcing more than 700 mA. It is designed for use in high-voltage applications where standard bipolar regulators cannot be used. Excellent performance specifications, superior to those of most bipolar regulators, are achieved through circuit design and advanced layo ...
... DMOS output transistor capable of sourcing more than 700 mA. It is designed for use in high-voltage applications where standard bipolar regulators cannot be used. Excellent performance specifications, superior to those of most bipolar regulators, are achieved through circuit design and advanced layo ...
FEATURES PIN ASSIGNMENT
... 4. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥ VCCI -0.2V. 5. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥ VCCI -0.3V. 6. All inputs within 0.3V of ground or VCCI. 7. ICCO2 is the maximum average load cu ...
... 4. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥ VCCI -0.2V. 5. ICCO1 is the maximum average load which the DS1314 can supply to attached memories at VCCO ≥ VCCI -0.3V. 6. All inputs within 0.3V of ground or VCCI. 7. ICCO2 is the maximum average load cu ...
ADP5034 英文数据手册DataSheet 下载
... This is the input current into VIN3/VIN4, which is not delivered to the output load. ...
... This is the input current into VIN3/VIN4, which is not delivered to the output load. ...
Dmm+lab+report+document+(2)
... This lab allowed students to create a digital multimeter that could measure voltage and resistance. The design of the multimeter consisted of a voltage controlled oscillator, timers and seven segment display. Design and theory of the multimeter was implemented producing results as a voltage and ohmm ...
... This lab allowed students to create a digital multimeter that could measure voltage and resistance. The design of the multimeter consisted of a voltage controlled oscillator, timers and seven segment display. Design and theory of the multimeter was implemented producing results as a voltage and ohmm ...
SNx4HC05 Inverters With Open-Drain Outputs
... digital logic devices are unused, for example, when only two inputs of a triple-input AND gate are used or only three of the four buffer gates are used. Such input pins should not be left unconnected because the undefined voltages at the outside connections result in undefined operational states. Al ...
... digital logic devices are unused, for example, when only two inputs of a triple-input AND gate are used or only three of the four buffer gates are used. Such input pins should not be left unconnected because the undefined voltages at the outside connections result in undefined operational states. Al ...
1. What is the potential difference across a 5 ohm resistor which
... b. a large cross-sectional area c. an extremely high temperature d. no resistance 3. If a 75 W lightbulb operates at a voltage of 120 V, what is the current in the bulb? a. 0.63 A b. 1.6 A c. 9.0 x 10 A d. 1.1 x 10 A 4. Tripling the current in a circuit with constant resistance has the effect of cha ...
... b. a large cross-sectional area c. an extremely high temperature d. no resistance 3. If a 75 W lightbulb operates at a voltage of 120 V, what is the current in the bulb? a. 0.63 A b. 1.6 A c. 9.0 x 10 A d. 1.1 x 10 A 4. Tripling the current in a circuit with constant resistance has the effect of cha ...
ELECTRICAL TECHNOLOGY LAB LAB MANUAL I, II SEMESTER
... A. A node is a junction in the circuit where two or more than two circuit elements are connected together. The part of the network, which lies between two junctions, is called branch. Q.10 What is the non-linear circuit? A. The circuit whose parameters change with the change in voltage and current i ...
... A. A node is a junction in the circuit where two or more than two circuit elements are connected together. The part of the network, which lies between two junctions, is called branch. Q.10 What is the non-linear circuit? A. The circuit whose parameters change with the change in voltage and current i ...
UNIVERSITI TEKNOLOGI MALAYSIA
... Nanowire Field-Effect Transistor (Si NWFET) had been given a lot of attention as candidate for Complementary Metal-Oxide-Semiconductor (CMOS) technology because of its unique advantages as it was based on silicon, the material that had been working by the semiconductor industries for a period of tim ...
... Nanowire Field-Effect Transistor (Si NWFET) had been given a lot of attention as candidate for Complementary Metal-Oxide-Semiconductor (CMOS) technology because of its unique advantages as it was based on silicon, the material that had been working by the semiconductor industries for a period of tim ...
LT5570 - Linear Technology
... The LT5570’s differential inputs are optimally driven from a fully balanced source. When the signal is from a singleended 50Ω source, conversion to a differential signal is required to achieve the maximum dynamic range. This is best achieved using a 1:4 balun to match the internal 200Ω input impedan ...
... The LT5570’s differential inputs are optimally driven from a fully balanced source. When the signal is from a singleended 50Ω source, conversion to a differential signal is required to achieve the maximum dynamic range. This is best achieved using a 1:4 balun to match the internal 200Ω input impedan ...
EcoSpeedTM Step-down Controller with I2C Interface
... controller. Additionally, a status register provides information on device state and faults. The controller is capable of operating with all ceramic solutions and switching frequencies up to 1MHz. The programmable frequency and selectable power save mode offer the flexibility to optimize the control ...
... controller. Additionally, a status register provides information on device state and faults. The controller is capable of operating with all ceramic solutions and switching frequencies up to 1MHz. The programmable frequency and selectable power save mode offer the flexibility to optimize the control ...
A Charge-Pump Type AC-DC Converter for Kei Eguchi Takahiro Inoue
... opposite polarities. Figure 2 shows a model of the power receiving coils. The conventional converter of Fig.1 consists of 2 charge-pump type AC-DC converters with opposite polarities. The converter shown in Fig.1 can supply a stepped-up DC voltage. After the AC-DC conversion, the output DC voltage i ...
... opposite polarities. Figure 2 shows a model of the power receiving coils. The conventional converter of Fig.1 consists of 2 charge-pump type AC-DC converters with opposite polarities. The converter shown in Fig.1 can supply a stepped-up DC voltage. After the AC-DC conversion, the output DC voltage i ...
MAX3291,92 - Part Number Search
... programmable for data rates of 5Mbps to 10Mbps, while the MAX3292 is programmable for data rates up to 10Mbps by using a single external resistor. The MAX3291/MAX3292 are full-duplex devices that operate from a single +5V supply and offer a low-current shutdown mode that reduces supply current to 10 ...
... programmable for data rates of 5Mbps to 10Mbps, while the MAX3292 is programmable for data rates up to 10Mbps by using a single external resistor. The MAX3291/MAX3292 are full-duplex devices that operate from a single +5V supply and offer a low-current shutdown mode that reduces supply current to 10 ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.