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Chapter 3 Special-Purpose Diodes
Chapter 3 Special-Purpose Diodes

... across a 2 Ω resistor. When the voltage is at its positive peak, the power delivered at that instant is 32 W as shown in the figure. At the midpoint of 4 V, the instantaneous power delivered drops to 8 W; when the voltage crosses the axis, it drops to 0 W. Note that when the voltage crosses the its ...
LM614 数据资料 dataSheet 下载
LM614 数据资料 dataSheet 下载

... Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rati ...
Analysis of Dynamic Power Factor Correction Using Flexible
Analysis of Dynamic Power Factor Correction Using Flexible

... The voltage and current signal from PT and CT are fed to respective Zero Crossing Detector (ZCD) circuits as shown in fig. The open loop op-amplifier is used to convert the AC sine wave voltage into square waveform, which is then fed to EX.OR circuits to get a sharp pulse at the instance of zero-cro ...
INA105 - Texas Instruments
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... NOTES: (1) Connected as difference amplifier (see Figure 4). (2) Nonlinearity is the maximum peak deviation from the best-fit straight line as a percent of full-scale peakto-peak output. (3) 25kΩ resistors are ratio matched but have ±20% absolute value. (4) Maximum input voltage without protection i ...
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SC805 Datasheet

... pin. Note that the SC805 will be disabled due to the NTC function when the ‘No Battery’ condition is detected due to the NTC feature. The NTC temperature fault can be overridden to re-enable the output of the charger for no battery conditions as described in the NOBAT section of the datasheet. ...
Get low-noise, low-ripple, high
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... 1990B3. A battery with an emf of 24 volts and an internal resistance of 1 ohm is connected to an external circuit as shown above. Determine each of the following: a. the equivalent resistance of the combination of the 4-ohm, 8-ohm, and 12-ohm resistors b. the current in the 5-ohm resistor c. the ter ...
AD549 Ultralow Input Bias Current Operational Amplifier Data Sheet
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LMH664x 2.7 V, 650 uA, 55 MHz, Rail-to

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... 1) Open your ESD safe bag and take out the transistor with its leads twisted together. 2) Gently untwist the leads (counterclockwise). 3) Verify than none of the leads are touching. 4) From reading the package and observing its small size, you should have concluded that the transistor was a 2N3904 g ...
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... the power supply and eliminate heavy arcing when the remaining battery cable is connected. After approximately one (1) minute, turn off the power supply and immediately connect the remaining battery cable. • Connect loads. • Turn on the power supply again and the charger will commence charging the b ...
Analog Signal Conditioning Introduction
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AC Power Definitions - Chroma Systems Solutions, Inc.
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... combination of the two represents VA, the apparent power. The angle between the real power axis (horizontal) and the apparent power vector is theta. The cosine of angle theta is equal to the power factor, as identified in equation 3. Often, electrical equipment manufacturers will identify the power ...
ADD8754 数据手册DataSheet 下载
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... requiring only external charge pump components to provide all the requirements for panel power, VCOM, and gate modulation. Included in a single chip are a high frequency step-up dc-to-dc switching regulator, logic voltage regulator, VCOM amplifier, and ...
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UCC28810 数据资料 dataSheet 下载

... In the critical conduction mode operation, the PWM circuit is self-oscillating with the turn-on being governed by a transformer zero energy detector (TZE pin) and the turn-off being governed by the current sense comparator. Additionally, the controller provides features such as peak current limit, r ...
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... a low 0.6V feedback threshold voltage. The MAX8553/ MAX8554 use Maxim’s proprietary Quick-PWM™ architecture for fast transient response and operate with selectable pseudo-fixed frequencies. Both controllers can operate without an external bias supply. The controllers operate in synchronous-rectifica ...
AD628 High Common-Mode Voltage, Programmable Gain
AD628 High Common-Mode Voltage, Programmable Gain

FEATURES PIN ASSIGNMENT
FEATURES PIN ASSIGNMENT

... going low to the earlier of CE or WE going high. 4. tDS are measured from the earlier of CE or WE going high. 5. These parameters are sampled with a 5pF load and are not 100% tested. 6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remai ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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