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Silicon Controlled Rectifiers
Silicon Controlled Rectifiers

unit 102-3: batteries, bulbs, and current flow
unit 102-3: batteries, bulbs, and current flow

RF Microelectronic
RF Microelectronic

Development of Models for Optical Instrument Transformers by
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... Optical Instrument Transformers (OIT) have been developed as an alternative to traditional instrument transformers (IT). The question "Can optical instrument transformers substitute for the traditional transformers?" is the main motivation of this study. Finding the answer for this question and deve ...
Chapter 3 Special-Purpose Diodes
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THS452x Very Low Power, Negative Rail Input
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Minimum Achievable Phase Noise of RC Oscillators
Minimum Achievable Phase Noise of RC Oscillators

... Fig. 2(a) shows part of a switching based oscillator. The energy injecting element switches when the voltage of the control terminal reaches . We use the first crossing approximation, which assumes that the switching takes place when the voltage reaches for the first time [5]. Using a linear approxi ...
RMS2071ME68FAF-1600-MH0
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... 1. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t) over a very long period of time (e.g., 1 sec). 2. If maximum limit is exceeded, input levels shall be governed by DDR3 specifications. 3. Under these supply voltages, the device operates to this DDR ...
TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators with Enable
TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators with Enable

Vacuum circuit-breaker up to 36 kV
Vacuum circuit-breaker up to 36 kV

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NEW CIRCUIT PRINCIPLES FOR INTEGRATED CIRCUITS

DOE Fundamentals Handbook Electrical Science Volume 1 of 4
DOE Fundamentals Handbook Electrical Science Volume 1 of 4

AD7688 数据手册DataSheet下载
AD7688 数据手册DataSheet下载

... The AD7688 is a 16-bit, charge redistribution, successive approximation, analog-to-digital converter (ADC) that operates from a single 5 V power supply, VDD. It contains a low power, high speed, 16-bit sampling ADC with no missing codes, an internal conversion clock, and a versatile serial interface ...
to this file.
to this file.

... terminal. In addition, you must configure them for the type of measurement (dc or ac) that you wish to make. This is described in the examples that follow. ...
LMH6555 Low Distortion 1.2 GHz Differential Driver (Rev. D)
LMH6555 Low Distortion 1.2 GHz Differential Driver (Rev. D)

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Series and Parallel Circuits

AN2014 Application note How a designer can make the most of
AN2014 Application note How a designer can make the most of

... Structure of an EEPROM floating gate transistor, and circuit symbol. . . . . . . . . . . . . . . . . . 7 MOSFET-like operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Floating gate reservoir full of electrons (Erased state) . . . . . ...
Quad Channel, 16-Bit, Serial Input, Dynamic Power Control, HART Connectivity
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PowerPad Portable Power Monitor User Manual
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AT 121 – Lab 2 – Ohms Law

Paper - CPES - Virginia Tech
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... coupled coils is represented by transformer T model. In order to identify the resonant frequency with voltage source output characteristics in CLL resonant converter, equivalent circuit with one branch in series with load is derived with Thevenin’s theorem and Norton’s theorem as shown in Fig. ...
AD8403 数据手册DataSheet下载
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... INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V. DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions. See the test circuit in Figure 37. ...
Programmable Membership Function Circuits Using Analog MOS
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... reconfigured to suite any applications with certain fuzzy rules configuration. The proposed FIC uses zero-order Takagi-Sugeno-Kang inference method, which gives simple structure with minimum use of transistors. This simple structure will make the circuit cheaper in solidstate implementations and fas ...
XCL205/XCL206/XCL207Series
XCL205/XCL206/XCL207Series

... *6: The CE/MODE pin of the XCL207 series works also as an external switching pin of PWM control and PWM/PFM control. When the IC is in the operation, control is switched to the automatic PWM/PFM switching mode when the CE/MODE pin voltage is equal to or greater than VIN minus 0.3V, and to the PWM mo ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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