INSTRUCTION MANUAL For RELAY TEST SET Model
... These output terminals are used to provide DC voltage or DC current to the device under test. The output is controlled by the Control Knob (18). 0 - 250 VDC MAX : Up to 250 Volts DC is available from these terminals. 0 – 2.5 ADC MAX : Up to 2.5 Amperes DC is available from these terminals. Note: DC ...
... These output terminals are used to provide DC voltage or DC current to the device under test. The output is controlled by the Control Knob (18). 0 - 250 VDC MAX : Up to 250 Volts DC is available from these terminals. 0 – 2.5 ADC MAX : Up to 2.5 Amperes DC is available from these terminals. Note: DC ...
Design Considerations For Logic Products
... Section 2, Backplane Design, includes reports on TI’s Gunning Transceiver Logic (GTL) and Backplane Transceiver Logic (BTL) families. Aspects of line reflection and live insertion also are considered. Each design is ultimately the result of several individual-device decisions. Consequently, the desi ...
... Section 2, Backplane Design, includes reports on TI’s Gunning Transceiver Logic (GTL) and Backplane Transceiver Logic (BTL) families. Aspects of line reflection and live insertion also are considered. Each design is ultimately the result of several individual-device decisions. Consequently, the desi ...
ADG3308 数据手册DataSheet 下载
... compatible logic signals applied to the A side of the device appear as VCCY compatible levels on the Y side. Similarly, VCCY compatible logic levels applied to the Y side of the device appear as VCCA compatible logic levels on the A side. The enable pin (EN) provides three-state operation on both th ...
... compatible logic signals applied to the A side of the device appear as VCCY compatible levels on the Y side. Similarly, VCCY compatible logic levels applied to the Y side of the device appear as VCCA compatible logic levels on the A side. The enable pin (EN) provides three-state operation on both th ...
Instruction Manual
... the power supply will set itself to the settings stored in location 00. Note: If you press the Recall button while turning the power on, the power supply will power up using memory location 01 parameters. This button is used to store power supply’s current operating state in nonvolatile memory. Usin ...
... the power supply will set itself to the settings stored in location 00. Note: If you press the Recall button while turning the power on, the power supply will power up using memory location 01 parameters. This button is used to store power supply’s current operating state in nonvolatile memory. Usin ...
Non-inverting amplifier
... The output impedance of the amplifier and the capacitive contribute to the formation of a second pole at low frequency – A’(p) = k A(p) 1/(1+r C p) with r = R0//R2//R – A(p) = A0 / (p+w0) ...
... The output impedance of the amplifier and the capacitive contribute to the formation of a second pole at low frequency – A’(p) = k A(p) 1/(1+r C p) with r = R0//R2//R – A(p) = A0 / (p+w0) ...
Amplifier Frequency Response
... All real capacitors have some series resistance and inductance and some parallel resistance, as shown in part (c) of Figure 9-1. The parallel resistance is a result of leakage current through the dielectric and can be significant in some applications. Electrolytic capacitors can have especially larg ...
... All real capacitors have some series resistance and inductance and some parallel resistance, as shown in part (c) of Figure 9-1. The parallel resistance is a result of leakage current through the dielectric and can be significant in some applications. Electrolytic capacitors can have especially larg ...
ADG3304 数据手册DataSheet 下载
... The ADG3304 is a bidirectional logic level translator that contains four bidirectional channels. It can be used in multivoltage digital system applications, such as data transfer, between a low voltage digital signal processing controller and a higher voltage device using SPI and MICROWIRE interface ...
... The ADG3304 is a bidirectional logic level translator that contains four bidirectional channels. It can be used in multivoltage digital system applications, such as data transfer, between a low voltage digital signal processing controller and a higher voltage device using SPI and MICROWIRE interface ...
Practical Electronics for Inventors
... totally lost interest in the subject or may have missed the “big picture,” confused by details and formulas. Practical Electronics for Inventors does not have this effect on the reader. Each chapter is broken up into sections with the essential practical information listed first. A typical chapteron ...
... totally lost interest in the subject or may have missed the “big picture,” confused by details and formulas. Practical Electronics for Inventors does not have this effect on the reader. Each chapter is broken up into sections with the essential practical information listed first. A typical chapteron ...
MAX9918/MAX9919/MAX9920 -20V to +75V Input Range, Precision Uni-/Bidirectional, Current-Sense Amplifiers
... The MAX9918/MAX9919/MAX9920 are single-supply, high-accuracy current-sense amplifiers with a high input common-mode range that extends from -20V to +75V. These amplifiers are well suited for current monitoring of inductive loads such as motors and solenoids, where common-mode voltages can become neg ...
... The MAX9918/MAX9919/MAX9920 are single-supply, high-accuracy current-sense amplifiers with a high input common-mode range that extends from -20V to +75V. These amplifiers are well suited for current monitoring of inductive loads such as motors and solenoids, where common-mode voltages can become neg ...
514 - NDIR analyzer - Teledyne Analytical Instruments
... In the explosion-proof version, the calibration meter is used as an all purpose readout; in this case, there is some modification in the switching at both the control module and power module. In addition to control switching, adjustment (zero and span), and readout components, the control module has ...
... In the explosion-proof version, the calibration meter is used as an all purpose readout; in this case, there is some modification in the switching at both the control module and power module. In addition to control switching, adjustment (zero and span), and readout components, the control module has ...
SGA Strain Gauge Load Cell Amplifier / Signal Conditioner Manual
... A further powering option is available; the IS1224 module comprises a DC-DC converter enabling the SGA to be powered from 9-36V DC. See Figure2.3 for details. The ISS1224 can only be fitted to the SGA/D as it occupies the same space as the mains transformer in the SGA/A. The SGA/A however, is isolat ...
... A further powering option is available; the IS1224 module comprises a DC-DC converter enabling the SGA to be powered from 9-36V DC. See Figure2.3 for details. The ISS1224 can only be fitted to the SGA/D as it occupies the same space as the mains transformer in the SGA/A. The SGA/A however, is isolat ...
Transformerless Inverters and RCD: What`s the Problem?
... When transformerless PV inverters are used, the stray capacitance between the PV arrays and the ground can cause leakage currents to the ground (Fig. 1): - These leakage currents flow from the connection of the PV structure to the ground (necessary for safety reasons and to prevent lightning damages ...
... When transformerless PV inverters are used, the stray capacitance between the PV arrays and the ground can cause leakage currents to the ground (Fig. 1): - These leakage currents flow from the connection of the PV structure to the ground (necessary for safety reasons and to prevent lightning damages ...
Bulk FinFETs: Design at 14 nm Node and Key
... Decrease of the drain current by parasitic resistance in the source (S) and drain (D) regions is also addressed. Drain current fluctuation by single charge trap is studied in terms of the trap depth, trap position, and percolation path. In the design of 14 nm bulk FinFETs, a punch-through stopper at ...
... Decrease of the drain current by parasitic resistance in the source (S) and drain (D) regions is also addressed. Drain current fluctuation by single charge trap is studied in terms of the trap depth, trap position, and percolation path. In the design of 14 nm bulk FinFETs, a punch-through stopper at ...
Ten
... self-heating due to power dissipation). Resistors may be selected for good TCR tracking when they are all at the same temperature. But, changes due to differential internal temperatures (e.g. differential power dissipation) or different local temperatures (e.g. differential heating from neighboring ...
... self-heating due to power dissipation). Resistors may be selected for good TCR tracking when they are all at the same temperature. But, changes due to differential internal temperatures (e.g. differential power dissipation) or different local temperatures (e.g. differential heating from neighboring ...
MB Series - DriverAgent
... Chapter 1 - Introduction provides an overview of MB Series modules (including MBAF Series modules), MB Series backplanes, and applications. ...
... Chapter 1 - Introduction provides an overview of MB Series modules (including MBAF Series modules), MB Series backplanes, and applications. ...
SE-330 Manual
... located and cleared. Consult CEC 10-1102, NEC 250.36, and NEC 250.186 for application details. System charging current is the capacitive current that flows to ground when a bolted ground fault occurs. This current can be calculated or measured. For small systems, the magnitude of charging current ca ...
... located and cleared. Consult CEC 10-1102, NEC 250.36, and NEC 250.186 for application details. System charging current is the capacitive current that flows to ground when a bolted ground fault occurs. This current can be calculated or measured. For small systems, the magnitude of charging current ca ...
Design Techniques for EMC, 2006 series
... On-chip (or in-package) decoupling capacitance. This is the best location for decoupling for EMC, and also makes PCB power rail decoupling much easier. ...
... On-chip (or in-package) decoupling capacitance. This is the best location for decoupling for EMC, and also makes PCB power rail decoupling much easier. ...
14-Bit, 500 kSPS PulSAR ADC in MSOP AD7946
... The AD7946 is a 14-bit, charge redistribution, successive approximation, analog-to-digital converter (ADC) that operates from a single 5 V power supply, VDD. It contains a low power, high speed, 14-bit sampling ADC with no missing codes, an internal conversion clock, and a versatile serial interface ...
... The AD7946 is a 14-bit, charge redistribution, successive approximation, analog-to-digital converter (ADC) that operates from a single 5 V power supply, VDD. It contains a low power, high speed, 14-bit sampling ADC with no missing codes, an internal conversion clock, and a versatile serial interface ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.