
Phys122B_L24_mjs
... We know that a mass and spring can make an oscillator. What about a capacitor and inductor. Consider the circuit shown in the diagram. What happens when the switch is closed? The capacitor discharges by creating a current in the inductor. But where does the energy go that had been stored in the indu ...
... We know that a mass and spring can make an oscillator. What about a capacitor and inductor. Consider the circuit shown in the diagram. What happens when the switch is closed? The capacitor discharges by creating a current in the inductor. But where does the energy go that had been stored in the indu ...
ONET8531T 数据资料 dataSheet 下载
... The ONET8531T is a high-speed and high-gain limiting-transimpedance amplifier, used in optical receivers with data rates up to 12.5 Gbps. It features low input referred noise, 10 GHz bandwidth, 4.5 kΩ small signal transimpedance, and a received signal strength indicator (RSSI). The ONET8531T is avai ...
... The ONET8531T is a high-speed and high-gain limiting-transimpedance amplifier, used in optical receivers with data rates up to 12.5 Gbps. It features low input referred noise, 10 GHz bandwidth, 4.5 kΩ small signal transimpedance, and a received signal strength indicator (RSSI). The ONET8531T is avai ...
香港考試局
... 38 Three resistors of resistance R1, R2 and R3 are connected in series. It is known that R1 > R2 > R3 . The equivalent resistance of this combination is R. Which of the following statements is/are correct ? (1) R is larger than R1. (2) If the resistor with resistance R1 is shorted, the resulting eq ...
... 38 Three resistors of resistance R1, R2 and R3 are connected in series. It is known that R1 > R2 > R3 . The equivalent resistance of this combination is R. Which of the following statements is/are correct ? (1) R is larger than R1. (2) If the resistor with resistance R1 is shorted, the resulting eq ...
ADS5204-Q1 数据资料 dataSheet 下载
... (1) Integral nonlinearity refers to the deviation of each individual code from a line drawn from zero to full-scale. The point used as zero occurs 1/2 LSB before the first code transition. The full-scale point is defined as a level 1/2 LSB beyond the last code transition. The deviation is measured f ...
... (1) Integral nonlinearity refers to the deviation of each individual code from a line drawn from zero to full-scale. The point used as zero occurs 1/2 LSB before the first code transition. The full-scale point is defined as a level 1/2 LSB beyond the last code transition. The deviation is measured f ...
INA301-Q1 36-V, Automotive, High-Speed, Zero
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
15W, 30W, 50W Filter-Free Class-D Stereo Amplifier Family with AM
... Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional ...
... Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional ...
UFPC - VIVAINNOVA
... with Traditional Electronics to exploit the competitive advantages of both technologies. While Traditional Electronics provide high performance and maturity, Printed Electronics provides flexible substrates with high volume production, at a relatively low cost compared with traditional electronics. ...
... with Traditional Electronics to exploit the competitive advantages of both technologies. While Traditional Electronics provide high performance and maturity, Printed Electronics provides flexible substrates with high volume production, at a relatively low cost compared with traditional electronics. ...
AD831 数据手册DataSheet 下载
... The AD831 is a low distortion, wide dynamic range, monolithic mixer for use in such applications as RF to IF downconversion in HF and VHF receivers, the second mixer in DMR base stations, direct-to-baseband conversion, quadrature modulation and demodulation, and doppler shift detection in ultrasound ...
... The AD831 is a low distortion, wide dynamic range, monolithic mixer for use in such applications as RF to IF downconversion in HF and VHF receivers, the second mixer in DMR base stations, direct-to-baseband conversion, quadrature modulation and demodulation, and doppler shift detection in ultrasound ...
Lecture Slides - UTK-EECS
... Psw: power dissipated during switching transition, calculated by (2) VCC / VEE: positive/negative output voltage of gate driver IC Qg: gate charge, obtained from the datasheet of the power device ...
... Psw: power dissipated during switching transition, calculated by (2) VCC / VEE: positive/negative output voltage of gate driver IC Qg: gate charge, obtained from the datasheet of the power device ...
TPS54331 3-A 28-V Input Step Down DC
... The integrated 80-mΩ high-side MOSFET allows for high-efficiency power-supply designs with continuous output currents up to 3 A. The TPS54331 device reduces the external component count by integrating the boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by an ext ...
... The integrated 80-mΩ high-side MOSFET allows for high-efficiency power-supply designs with continuous output currents up to 3 A. The TPS54331 device reduces the external component count by integrating the boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by an ext ...
4Wavelets an Hilbert Transform methods for accurate detection of
... The choice of mother wavelet is different for each problem at hand and can have a significant effect on the results obtained. Orthogonal wavelets ensure that the signal can be reconstructed from its transform coefficients . As wavelet the symlets function was used. The symlets are nearly symmetrical ...
... The choice of mother wavelet is different for each problem at hand and can have a significant effect on the results obtained. Orthogonal wavelets ensure that the signal can be reconstructed from its transform coefficients . As wavelet the symlets function was used. The symlets are nearly symmetrical ...
ABUT
... 19.5. The state of the diode depends on the input voltage polarity -- and also on the load. With no information about the load, it is not possible to predict either the load current or voltage. With a resistive load, the load voltage is zero whenever the diode is off. One simple way to find the circ ...
... 19.5. The state of the diode depends on the input voltage polarity -- and also on the load. With no information about the load, it is not possible to predict either the load current or voltage. With a resistive load, the load voltage is zero whenever the diode is off. One simple way to find the circ ...
LM139/LM239/LM339/LM2901/LM3302 Low Power Low Offset
... Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NP ...
... Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NP ...
28V-Capable, I V Accessory Switch MAX14544/MAX14545
... OUT can withstand 28V maximum. When the switch is on and a load is connected to the port, a blanking time of 10.5ms ensures that the transient voltage settles down. After this blanking time, if the voltage across the switch is greater than the FLAG assertion voltage, the switch turns off and then a ...
... OUT can withstand 28V maximum. When the switch is on and a load is connected to the port, a blanking time of 10.5ms ensures that the transient voltage settles down. After this blanking time, if the voltage across the switch is greater than the FLAG assertion voltage, the switch turns off and then a ...
BQ24313 数据资料 dataSheet 下载
... voltage. The output acts as a linear regulator. The output is regulated to VO(REG) for inputs between VO(REG) and the overvoltage threshold. If an input overvoltage condition occurs, the IC immediately removes power from the charging circuit by turning off an internal switch. In the case of an overc ...
... voltage. The output acts as a linear regulator. The output is regulated to VO(REG) for inputs between VO(REG) and the overvoltage threshold. If an input overvoltage condition occurs, the IC immediately removes power from the charging circuit by turning off an internal switch. In the case of an overc ...
TF3_Seams_Joints_Robinson.pps
... 1. George Kunkel, Joseph E. Butler, & Louis A. Messer, “Guest Editorials; Testing of EMI Gaskets”, EMC Technology, January, March, May 1989. 2. George Kunkel, “Lightning Induced Electromagnetic Fields into Aerospace ...
... 1. George Kunkel, Joseph E. Butler, & Louis A. Messer, “Guest Editorials; Testing of EMI Gaskets”, EMC Technology, January, March, May 1989. 2. George Kunkel, “Lightning Induced Electromagnetic Fields into Aerospace ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.