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OP270
OP270

... The OP270 is a high performance, monolithic, dual operational amplifier with exceptionally low voltage noise, 5 nV/÷Hz max at 1 kHz. It offers comparable performance to ADI’s industry standard OP27. The OP270 features an input offset voltage below 75 mV and an offset drift under 1 mV/∞C, guaranteed ...
比较器系列ADCMP609 数据手册DataSheet 下载
比较器系列ADCMP609 数据手册DataSheet 下载

... With the rated 15 pF load capacitance applied, more than half of the total device propagation delay is output stage slew time. Because of this, the total propagation delay decreases as VCC decreases, and instability in the power supply may appear as excess delay dispersion. ...
Arrester Reference Voltage
Arrester Reference Voltage

15W, 30W, 50W Filter-Free Class-D Stereo Amplifier Family with AM
15W, 30W, 50W Filter-Free Class-D Stereo Amplifier Family with AM

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SolarPro voltage_rise_article_by_Sean_White

... output conductor minimizes the voltage rise in the ac wiring and therefore reduces nuisance tripping due to high ac voltage.” This is often the simplest and most cost-effective solution to potential voltage rise problems. Increase conductor area. System designers can also oversize the inverter outpu ...
MAX14824 IO-Link Master Transceiver General Description Features
MAX14824 IO-Link Master Transceiver General Description Features

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HOME-BUILDING AMATEUR RADIO EQUIPMENT CHAPTER 2
HOME-BUILDING AMATEUR RADIO EQUIPMENT CHAPTER 2

... This large volume covers all aspects of the hobby. Unfortunately, its size is overwhelming for many readers. Also, so few hams build their own equipment today that serious homebuilding has been de-emphasized in the Handbook. In fact, if all you had were the handbook, you would probably conclude that ...
Data Sheet ACPL-798J Optically Isolated Sigma-Delta Modulator with LVDS Interface Description
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... RoHS 6 fully compliant options available; -xxxE denotes a lead-free product ...
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)

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Advance Electronics

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No Slide Title

... 4.2.5 The Role of the Substrate-The Body Effect - Usually, the source terminal is connected to the substrate (or body) terminal. - In integrated circuit, many MOS transistors are fabricated on a single substrate. - In order to maintain the cutoff condition for all the substrate-to-channel junctions ...
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TLE7368 - Infineon Technologies

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BD00D0AWHFP

... A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin. Vcc ...
Triple, Low-Power, High-Speed, Fixed-Gain
Triple, Low-Power, High-Speed, Fixed-Gain

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30 W 18 to 60-V Input DC/DC Converter w/Auto Track Sequencing

... or 48–V telecom central office (CO) supply. Housed in a 1×2 package, each model has a wide-adjust output voltage that can be set to one of the common intermediate bus voltages of 3.3 V, 5 V, or 12 V. The PTB78560 series incorporates Auto-Track™, a feature that simplifies the power-up sequencing of m ...
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user manual automatic power factor correction

... P.04 ‐ Reconnection time of the same step in seconds: Minimum time necessary for the batteries to discharge and then to be ready to use again. Example: set 60 sec P.05 – Sensitivity The sensitivity is a coefficient that enables the speed of the intervention of the regulator to be adjusted. With a lo ...
Low Power Multiplication Algorithm for Switching Activity Reduction
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High Impedance Signal Conditioning - OUTLINE

... When performing an impedance measurment like this, bear in mind that the insulator in the cable is entirely in parallel with the resistor under test. To maintain a 1% accuracy on a 100G resistor measurement requires an overall insulator impedance of no less than 10T. The only way around this limit ...
Live Insertion with Differential Interface Products
Live Insertion with Differential Interface Products

A Leakage Reduction Methodology for Distributed MTCMOS
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PDF: 410KB

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Differential amplifier
Differential amplifier

... moderate production volume; however some integrated or hybrid operational amplifiers with special performance specifications may cost over $100 US in small quantities. Op-amps sometimes come in the form of macroscopic components, (see photo) or as integrated circuit cells; patterns that can be repri ...
DIP-PFC APPLICATION NOTE MITSUBISHI ELECTRIC CORPORATION POWER SEMICONDUCTOR
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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