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ADV7127 数据手册DataSheet 下载
ADV7127 数据手册DataSheet 下载

... The ADV7127 (ADV®) is a high speed, digital-to-analog convertor on a single monolithic chip. It consists of a 10-bit, video D/A converter with on-board voltage reference, complementary outputs, a standard TTL input interface and high impedance analog output current sources. ...
TL1963A-Q1 1.5-A Low-Noise Fast-Transient
TL1963A-Q1 1.5-A Low-Noise Fast-Transient

M48Z2M1V
M48Z2M1V

... Should the supply voltage decay, the RAM will automatically power-fail deselect, write protecting itself tWP after VCC falls below VPFD. All outputs become high impedance, and all inputs are treated as “Don't care.” If power fail detection occurs during a valid access, the memory cycle continues to ...
CA3059, CA3079
CA3059, CA3079

... 3. Zero-Crossing Detector - Synchronizes the output pulses of the circuit at the time when the AC cycle is at zero voltage point; thereby eliminating radio-frequency interference (RFI) when used with resistive loads. 4. Triac Gating Circuit - Provides high-current pulses to the gate of the power con ...
stnrgpf01 - STMicroelectronics
stnrgpf01 - STMicroelectronics

... enables the correct number of PFC channels based on the actual load condition. With this function, the STNRGPF01 is always able to guarantee the highest power efficiency across a wide range of load current requirements. The device works in CCM at fixed frequency with average current mode control, an ...
60 dB Range (100 nA to 100 µA) ADL5306
60 dB Range (100 nA to 100 µA) ADL5306

... IREF assume this potential. This allows operation as a voltageinput logarithmic converter by the inclusion of a series resistor at either or both inputs. Note that the resistor setting, IREF, will need to be adjusted to maintain the intercept value. It should also be noted that the collector-emitter ...
Amplificador de potência cmos em 2.4 ghz com potência de saída
Amplificador de potência cmos em 2.4 ghz com potência de saída

... FIGURE 3 – ESD protected tray with samples of fabricated ICs in die format. These dies are from 2015 GICS tape-out. ........................................................................................................... 24 FIGURE 4 – An example on how hot carrier degradation occurs. A high kinet ...
The MOSFET Current Mirror
The MOSFET Current Mirror

VSP-300
VSP-300

4.5-V to 52-V Input, Current
4.5-V to 52-V Input, Current

Question Bank
Question Bank

... C) High selectivity D) All of the above 37. When an op-amp is operated in common mode fashion, CMRR should be ---A) Zero B) infinitely high C) very small D) 5db 38. The emitter coupled pair of BJT’s given a linear transfer relation between the differential Output voltage and the differential input v ...
MAX5080 Evaluation Kit Evaluates:  MAX5080–MAX5083 General Description Features
MAX5080 Evaluation Kit Evaluates: MAX5080–MAX5083 General Description Features

... The MAX5080 EV kit circuit uses a MAX5080 step-down converter IC (U1) to implement a step-down DC-DC converter circuit. The MAX5080 EV kit operates over a wide 4.5V to 40V input voltage range and is configured to provide 3.3V at up to 1A of output current. The MAX5080 step-down converter IC features ...
lx1744 dual output boost led driver/lcd bias
lx1744 dual output boost led driver/lcd bias

... Utilizing an internal N-Channel FET for LCD Bias generation minimizes PCB board space, whereas the use of an external N-Channel MOSFET for the higher current LED regulator portion results in maximum electrical efficiency. With a shutdown (Sleep) current of less than 1µA, the LX1744’s is optimized fo ...
Document
Document

... detection for two hands and two feet. Four G-M detector has been used in a single unit to cover whole area of hand and feet. A regulated high voltage power supply (900Vdc) has been designed using microcontroller PIC12F675 to operate the pancake Geiger-Müller detectors. The reading is displayed on li ...
Specification of Soneil Battery Charger MODEL: 5807SR 60V5A
Specification of Soneil Battery Charger MODEL: 5807SR 60V5A

... 36V and 10mA – 25mA current. Inhibit is needed so that when the batteries are being charged (charger is being used with AC on), the electrical vehicle motor cannot be used and hence prevents the vehicle from moving when charging the battery. 10.3 For low inhibit the charger also comes with a third G ...
datasheet
datasheet

... 5. Standard cable is HFBR-RXXYYY plastic optical fiber , with a maximum attenuation of 0.24 dB/m at 650 nm and NA = 0.5. Extra low loss cable is HFBR-EXXYYY plastic optical fiber, with a maximum attenuation of 0.19 dB/m at 650 nm and NA = 0.5. HCS cable is HFBR-H/VXXYYY glass optical fiber, with a m ...
RLC Series AC Circuits
RLC Series AC Circuits

MAX3558
MAX3558

... to AGC_ voltage of 0.5V and maximum gain corresponds to AGC_ voltage of 3V. AGC inputs can be driven from a demodulator’s AGC output, which normally controls a tuner’s RF AGC, or from the MAX3558’s onchip power detector. Should an overload condition occur, the closed-loop AGC circuitry continues to ...
HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER THS4631 FEATURES
HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER THS4631 FEATURES

... rate allows for fast settling times and good harmonic distortion at high frequencies. Low current and voltage noise allow amplification of extremely low-level input signals while still maintaining a large signal-to-noise ratio. The characteristics of the THS4631 make it ideally suited for use as a w ...
File - Thurso High Technologies
File - Thurso High Technologies

Word Document - American Society for Engineering Education
Word Document - American Society for Engineering Education

... semiconductor material difference for the IR emitter diode and the IR detector phototransistor. However, the spectral bandwidth (range) of the IR detector phototransistor is 620 to 980 nm and it works acceptably at 850 nm. Infrared Phototransistor Receiver Circuit The simple infrared photodetector r ...
physics lab manual - AKIDO College of Engineering
physics lab manual - AKIDO College of Engineering

... Hole Flow Direction Electron Flow Direction p-type Back metal diffused as shown in Fig. above. It can be other way also. The bottom side is totally covered and the front side is partially covered by a metal layers. Metal layers are used to collect all the photo generated carriers generated into the ...
PNIMNiPE_nr63
PNIMNiPE_nr63

TAS5111A 数据资料 dataSheet 下载
TAS5111A 数据资料 dataSheet 下载

... feeding in 12 V. This can be useful in an application where thermal conduction of heat from the device is difficult. Bypassing the LDR reduces dissipation by approximately 1 W at 30-V GVDD input. PVDD_X is the H-bridge power supply pin. Two power pins exist for each half-bridge to handle the current ...
SolarPro voltage_rise_article_by_Sean_White
SolarPro voltage_rise_article_by_Sean_White

... output conductor minimizes the voltage rise in the ac wiring and therefore reduces nuisance tripping due to high ac voltage.” This is often the simplest and most cost-effective solution to potential voltage rise problems. Increase conductor area. System designers can also oversize the inverter outpu ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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