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... A ground. None of the above. ...
A CMOS low power, process/temperature variation tolerant RSSI
A CMOS low power, process/temperature variation tolerant RSSI

... Generally, there are two types of circuits applied for magnitude control, namely the automatically gain-controlled amplifier (AGC) and the limiting amplifier (LA). An AGC consists of an amplifier with controllable gain and a magnitude detector for gain adjustment. Configured as a closed-loop structu ...
Chapter Title
Chapter Title

... Because the diode is only forward biased for one-half of the AC cycle, it is also reverse biased for one-half cycle. It is important that the reverse breakdown voltage rating of the diode be high enough to withstand the peak, reverse-biasing AC voltage. ...
The Effect of the Distance Between Metal Spheres on the
The Effect of the Distance Between Metal Spheres on the

... The effect of the distance between two electrodes on the amount of voltage passed between the electrodes is summarized in Table 1.1 and Table 1.2. During testing, there was a need to change the instrument used to measure the voltage. The original plan was to use a voltmeter; however, the voltage in ...
Chapter 7: Sequential Logic Circuits
Chapter 7: Sequential Logic Circuits

... The SR flip-flops discussed so far are asynchronous, and do not require a clock signal. Most systems operate in a synchronous fashion with transition events referenced to a clock. One possible realization of a clocked SR flip-flop— a level-sensitive positive latch— is shown in Figure 7.8. It consist ...
EE 442
EE 442

... The speed does tend to drop with an increasing load on the motor. This drop in speed is mainly due to the resistance of the armature winding. Shunt motors with low armature winding resistance run at nearly constant speeds through a broad range of loads. Just like most energy conversion devices, the ...
Summary of lesson
Summary of lesson

... Move to page 4.9– 4.12. Answer the following questions here or in the .tns file. Have students answer the questions on either the handheld, on the activity sheet, or both. Q34. The total resistance of the circuit is Answer: D. 18 Ω Q35. The total voltage of the circuit is Answer: C. 9 V Q36. The rea ...
Teacher Notes PDF - TI Education
Teacher Notes PDF - TI Education

Coulomb`s Law - AP Physics 2 Homework Page
Coulomb`s Law - AP Physics 2 Homework Page

Analog Applications Journal
Analog Applications Journal

... Introduction to phase-locked loop system modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Phase-locked loops (PLLs) are one of the basic building blocks in modern electronic systems. They have been widely used in communications, multimedia and many other applications. Starting from a ...
LTC4075
LTC4075

... is capable of sinking up to 10mA, making it suitable for driving an LED. ENABLE (Pin 6): Enable Input. When the LTC4075 is charging from the DCIN source, a logic low on this pin enables the charger. When the LTC4075 is charging from the USBIN source, a logic high on this pin enables the charger. If ...
THS1215 数据资料 dataSheet 下载
THS1215 数据资料 dataSheet 下载

... The THS1215 is a CMOS, low-power, 12-bit, 15 MSPS analog-to-digital converter (ADC) that operates with a 3.3-V supply. The THS1215 gives circuit developers complete flexibility. The analog input to the THS1215 is differential with a gain of 1.0 in Mode 1 and 0.5 in Mode 2. The THS1215 provides a wid ...
AAT1239-1 数据资料DataSheet下载
AAT1239-1 数据资料DataSheet下载

... AAT1239 operation, LED brightness increases based on the data applied at the EN/SET pin. The SEL logic pin changes the feedback voltage between two programmable ranges. The AAT1239-1 features a high current limit and fast, stable transitions for stepped or pulsed current applications. The high switc ...
Anatomy of Gate Charge
Anatomy of Gate Charge

IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

The Effect of the Length of Wire on the Current and Voltage of Series
The Effect of the Length of Wire on the Current and Voltage of Series

... because each individual battery provided about 1.5 volts, and in the series, each of the three batteries provided 1.5 volts, for a total of 4.5. With the parallel circuit, the three batteries in total provided 1.5 volts. This study relates to my experiment because it tests the differences between se ...
TPA0162: 2.8-W Stereo Audio Power Amplifier with Digital Volume
TPA0162: 2.8-W Stereo Audio Power Amplifier with Digital Volume

RT8205L/M
RT8205L/M

Quadrature oscillator using CDTA-based integrators
Quadrature oscillator using CDTA-based integrators

... allpass sections, each employing one current differencing transconductance amplifier (CDTA) and a virtually grounded pair of R and C components. The frequency of generated waveforms is insensitive to transconductances gm of CDTAs and is given by passive R and C components. Most of the reported oscil ...
AD8195 数据手册DataSheet 下载
AD8195 数据手册DataSheet 下载

... encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an ...
G5RL-U/-K
G5RL-U/-K

... *1. The contact resistance is measured with 1 A applied at 5 VDC using a fall-of-potential method. *2. These are measured at a coil temperature of 23°C and rated coil voltage. Pulse duty factor should be 10% MAX. *3. The insulation resistance is measured between coil and contacts and between contact ...
Zener Diode 1 circa 1995 M H Miller TUTORIAL PROJECT – ZENER
Zener Diode 1 circa 1995 M H Miller TUTORIAL PROJECT – ZENER

... breakdown region. This is not something that happens automatically; it must be assured as part of the design. There are in fact two conditions that must be met. For proper regulation the Zener diode must draw enough current to operate sufficiently far into the nearly constant voltage range above the ...
Synthesizer with VCO by Analog Devices
Synthesizer with VCO by Analog Devices

Series-Parallel Circuits
Series-Parallel Circuits

... circuit, add the series resistances and combine the parallel resistances.  In this diagram, R1 and R2 are in series, and R3 and R4 are in parallel. However, R2 is not in series with the parallel resistances: Resistances in series have the same current, but the current in R2 is equal to the sum of t ...
Chapter06
Chapter06

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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