
ADCMP341 数据手册DataSheet 下载
... VDD = 1.7 V, TA = 25°C VDD = 3.3 V, TA = 25°C VDD = 5.5 V, TA = 25°C VDD = 1.7 V, 0°C ≤ TA ≤ 70°C VDD = 3.3 V, 0°C ≤ TA ≤ 70°C VDD = 5.5 V, 0°C ≤ TA ≤ 70°C VDD = 1.7 V, −40°C ≤ TA ≤ +125°C VDD = 3.3 V, −40°C ≤ TA ≤ +125°C VDD = 5.5 V, −40°C ≤ TA ≤ +125°C TA = 25°C, VDD = 3.3 V ...
... VDD = 1.7 V, TA = 25°C VDD = 3.3 V, TA = 25°C VDD = 5.5 V, TA = 25°C VDD = 1.7 V, 0°C ≤ TA ≤ 70°C VDD = 3.3 V, 0°C ≤ TA ≤ 70°C VDD = 5.5 V, 0°C ≤ TA ≤ 70°C VDD = 1.7 V, −40°C ≤ TA ≤ +125°C VDD = 3.3 V, −40°C ≤ TA ≤ +125°C VDD = 5.5 V, −40°C ≤ TA ≤ +125°C TA = 25°C, VDD = 3.3 V ...
MAX5102 +2.7V to +5.5V, Low-Power, Dual, Parallel General Description
... Note 2: Gain error is: [100 (VF0,meas - ZCE - VF0,ideal) / VREF]. Where VF0,meas is the DAC output voltage with input code F0 hex, and VF0,ideal is the ideal DAC output voltage with input code F0 hex (i.e., VREF · 240 / 256). Note 3: Output settling time is measured from the 50% point of the falling ...
... Note 2: Gain error is: [100 (VF0,meas - ZCE - VF0,ideal) / VREF]. Where VF0,meas is the DAC output voltage with input code F0 hex, and VF0,ideal is the ideal DAC output voltage with input code F0 hex (i.e., VREF · 240 / 256). Note 3: Output settling time is measured from the 50% point of the falling ...
MAX3273 +3.3V, 2.5Gbps Low-Power Laser Driver General Description Features
... The MAX3273 laser driver consists of two main parts: a high-speed modulation driver and a laser-biasing block with automatic power control (APC). The circuit design is optimized for both high-speed and low-voltage (+3.3V) operation. To minimize the jitter of the input signal at speeds as high as 2.7 ...
... The MAX3273 laser driver consists of two main parts: a high-speed modulation driver and a laser-biasing block with automatic power control (APC). The circuit design is optimized for both high-speed and low-voltage (+3.3V) operation. To minimize the jitter of the input signal at speeds as high as 2.7 ...
LM34/LM35 Precision Monolithic Temperature Sensors
... are nonlinear. In addition, the outputs of these sensors are not linearly proportional to any temperature scale. Early monolithic sensors, such as the LM3911, LM134 and LM135, overcame many of these difficulties, but their outputs are related to the Kelvin temperature scale rather than the more popu ...
... are nonlinear. In addition, the outputs of these sensors are not linearly proportional to any temperature scale. Early monolithic sensors, such as the LM3911, LM134 and LM135, overcame many of these difficulties, but their outputs are related to the Kelvin temperature scale rather than the more popu ...
BSP75N 60V self-protected low-side Intellifet MOSFET switch Summary
... Over current protection Logic Over temperature protection ...
... Over current protection Logic Over temperature protection ...
A Magnetic Trap for Evaporative Cooling of Rb Atoms
... field rotates [9]. This creates a “circle of death” since if the atoms reach the zero-point, they can flip their spin and fall out of the trap. If the zero-point is not too far outside of the cloud of atoms, the hottest atoms can leave by getting to the B = 0 spot. This setup was explained in more d ...
... field rotates [9]. This creates a “circle of death” since if the atoms reach the zero-point, they can flip their spin and fall out of the trap. If the zero-point is not too far outside of the cloud of atoms, the hottest atoms can leave by getting to the B = 0 spot. This setup was explained in more d ...
megohmmeter
... 3.2.2 CHARGING TIME. The charging time for a capacitor is determined bythe maximum current then may bedrawnfrom thepower supply(approximately 10 rna at 500 volts and 2 rna at 100 volts) and by the resistance in series with the capacitor. With the function switch set at CHARGE, the series resistance ...
... 3.2.2 CHARGING TIME. The charging time for a capacitor is determined bythe maximum current then may bedrawnfrom thepower supply(approximately 10 rna at 500 volts and 2 rna at 100 volts) and by the resistance in series with the capacitor. With the function switch set at CHARGE, the series resistance ...
S1-3-15 - Series vs. Parallel
... light bulbs in these circuits. Resistors and light bulbs both restrict the amount of current that can flow through them. The difference is that resistors generate mostly heat energy, while light bulbs generate more light than heat. 1. Click Clear. Then construct a series circuit (one path only) cont ...
... light bulbs in these circuits. Resistors and light bulbs both restrict the amount of current that can flow through them. The difference is that resistors generate mostly heat energy, while light bulbs generate more light than heat. 1. Click Clear. Then construct a series circuit (one path only) cont ...
Linear Circuits Analysis
... characteristics of the circuit is sufficient in order to understand its behavior and be able to interconnect it with other circuits. The following figure illustrates the general concept where a circuit is represented by the box as indicated. Our communication with the circuit is via the port A-B. Th ...
... characteristics of the circuit is sufficient in order to understand its behavior and be able to interconnect it with other circuits. The following figure illustrates the general concept where a circuit is represented by the box as indicated. Our communication with the circuit is via the port A-B. Th ...
AD5726 数据手册DataSheet 下载
... Bipolar outputs are configured by connecting both VREFP and VREFN to nonzero voltages. This method of setting output voltage ranges has advantages over the bipolar offsetting methods because it is not dependent on internal and external resistors with different temperature coefficients. The AD5726 us ...
... Bipolar outputs are configured by connecting both VREFP and VREFN to nonzero voltages. This method of setting output voltage ranges has advantages over the bipolar offsetting methods because it is not dependent on internal and external resistors with different temperature coefficients. The AD5726 us ...
74VCX16373 Low Voltage 16-Bit Transparent Latch with 3.6V Tolerant Inputs and Outputs 7
... be transparent to the data when the Latch Enable (LE) is HIGH. When LE is LOW, the data that meets the setup time is latched. Data appears on the bus when the Output Enable (OE) is LOW. When OE is HIGH, the outputs are in a high impedance state. The 74VCX16373 is designed for low voltage (1.2V to 3. ...
... be transparent to the data when the Latch Enable (LE) is HIGH. When LE is LOW, the data that meets the setup time is latched. Data appears on the bus when the Output Enable (OE) is LOW. When OE is HIGH, the outputs are in a high impedance state. The 74VCX16373 is designed for low voltage (1.2V to 3. ...
3.3 V Zero Delay Buffer CY2304 Features
... © Cypress Semiconductor Corporation, 2001-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license u ...
... © Cypress Semiconductor Corporation, 2001-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license u ...
R15V0L - Zeftronics
... ACU stays latched off until the alternator switch is reset. Field-to-Ground Short Protection Should the alternator's field become shorted to ground the field-to-ground short protector turns off the Voltage Regulator, and switches on the ACU's Red field-toground short TSL and the instrument panel’s O ...
... ACU stays latched off until the alternator switch is reset. Field-to-Ground Short Protection Should the alternator's field become shorted to ground the field-to-ground short protector turns off the Voltage Regulator, and switches on the ACU's Red field-toground short TSL and the instrument panel’s O ...
EPC9107 QSG.indd - Efficient Power Conversion
... 6. Once operational, adjust the bus voltage and load current within the allowed operating range and observe the output switching behavior, efficiency and other parameters. 7. For shutdown, please follow steps in reverse. NOTE. When measuring the high frequency content switch node of gate voltage, ...
... 6. Once operational, adjust the bus voltage and load current within the allowed operating range and observe the output switching behavior, efficiency and other parameters. 7. For shutdown, please follow steps in reverse. NOTE. When measuring the high frequency content switch node of gate voltage, ...
Physics 750 teachers title
... difference) across the resistor in the circuit. The amplitude of the current depends on the impedance in the circuit, which varies with frequency. Calculate the theoretical resonant frequency for your circuit. Use the ScienceWorkshop or DataStudio program to control the frequency. If the current is ...
... difference) across the resistor in the circuit. The amplitude of the current depends on the impedance in the circuit, which varies with frequency. Calculate the theoretical resonant frequency for your circuit. Use the ScienceWorkshop or DataStudio program to control the frequency. If the current is ...
bq51013B Highly Integrated Wireless Receiver Qi
... All voltages are with respect to the VSS terminal, unless otherwise noted. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicat ...
... All voltages are with respect to the VSS terminal, unless otherwise noted. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicat ...
MRFE6VP6300HR5 Datasheet
... circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for an ...
... circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for an ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.