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Hot Swap Controller in 6-Lead TSOT Package ADM4210
Hot Swap Controller in 6-Lead TSOT Package ADM4210

... Input Pin. The ON (ON-CLR) pin is an input to a comparator that has a low-to-high threshold of 1.3 V with 80 mV hysteresis and a glitch filter. The ADM4210 is reset when the ON (ON-CLR) pin is low. When the ON (ON-CLR) pin is high, the ADM4210 is enabled. A rising edge on this pin has the added func ...
Dynamic Fine-Grain Leakage Reduction Using Leakage
Dynamic Fine-Grain Leakage Reduction Using Leakage

Selecting Decoupling Capacitors for Atmel`s PLDs
Selecting Decoupling Capacitors for Atmel`s PLDs

Understanding LDO Dropout
Understanding LDO Dropout

Slide 1
Slide 1

Analog Devices Welcomes Hittite Microwave Corporation
Analog Devices Welcomes Hittite Microwave Corporation

AMC1203 数据资料 dataSheet 下载
AMC1203 数据资料 dataSheet 下载

... only, and functional operation of the device at these or any other conditions beyond those indicated under the Recommended Operating Conditions is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. ...
AD7720 数据手册DataSheet下载
AD7720 数据手册DataSheet下载

... the analog input signal into a high speed 1-bit data stream. The part operates from a +5 V supply and accepts a differential input range of 0 V to +2.5 V or ± 1.25 V centered about a commonmode bias. The analog input is continuously sampled by the analog modulator, eliminating the need for external ...
AN-6005 Synchronous buck MOSFET loss calculations with
AN-6005 Synchronous buck MOSFET loss calculations with

... The switching interval begins when the high-side MOSFET driver turns on and begins to supply current to Q1’s gate to charge its input capacitance. There are no switching losses until VGS reaches the MOSFET’s VTH. therefore Pt1 = 0. When VGS reaches VTH, the input capacitance (CISS) is being charged ...
Power Supply Rejection Ratio Measurement
Power Supply Rejection Ratio Measurement

... OMICRON Lab is a division of OMICRON electronics specialized in providing Smart Measurement Solutions to professionals such as scientists, engineers and teachers engaged in the field of electronics. It simplifies measurement tasks and provides its customers with more time to focus on their real busi ...
RF3161 QUAD-BAND GSM850/GSM900/DCS/PCS GMSK/EDGE POWER AMP MODULE Features
RF3161 QUAD-BAND GSM850/GSM900/DCS/PCS GMSK/EDGE POWER AMP MODULE Features

... The RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides over 50dB of control range. The device is a self-contained 6mmx6mmx1mm module with 50Ω input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM90 ...
bandgap voltage reference
bandgap voltage reference

... biased. Positive voltage on the P-type anode (blue,) drives holes toward the junction with N-type (red) material. At the same time the negative voltage on the N-type material repels electrons toward the junction where many recombine with the holes. Some of the electrons may cross over into the P-typ ...
Wiring Primer - Era Replica Automobiles
Wiring Primer - Era Replica Automobiles

... current in the field circuit, and is controlled by the Voltage Regulator. Current is fed to the battery and other power absorbers through the large Bat terminal on the back of the alternator. A ground connection on the alternator case completes the electrical circuit. There is also a Stator terminal ...
Power Electronic Modelling and Emulation of an Electrostatic
Power Electronic Modelling and Emulation of an Electrostatic

... be tested by using different precipitator types and scenarios. The IGBT pulses of the control unit are acquired and the precipitator current and voltage are emulated using a precipitator model. This test system can also be used for testing different precipitator models and high voltage transformer p ...
You may the IOTA Power Products
You may the IOTA Power Products

... control is automatic...just plug in the controller and it does the work. External and internal IQ4 models are available. See page 10 for details. The unique Proportional Fan Control circuit maintains fan speed in direct proportion to the converter’s internal ambient temperature, enabling the fan to ...
View a Sample Lesson  - Electrical Training Network
View a Sample Lesson - Electrical Training Network

www.Jameco.com 1-800-831-4242 Jameco Part Number 115318
www.Jameco.com 1-800-831-4242 Jameco Part Number 115318

... offset and drift of the OP07 with both high speed and low noise. Offsets down to 25 µV and drift of 0.6 µV/°C maximum make the OP27 ideal for precision instrumentation applications. Exceptionally low noise, en = 3.5 nV/√Hz, at 10 Hz, a low 1/f noise corner frequency of 2.7 Hz, and high gain (1.8 mil ...
Performance analysis of radix-4 adders Linköping University Post Print
Performance analysis of radix-4 adders Linköping University Post Print

... and radix-4 architectures are presented and compared for 64bit parallel prefix adders with main emphasis on the KoggeStone adder. In this work, we design a radix-4 FA instead of the more common radix-2 FA. The radix-4 FA is based on internal carry look-ahead to reduce the carry propagation path in a ...
LT4254 - Positive High Voltage Hot Swap Controller with Open
LT4254 - Positive High Voltage Hot Swap Controller with Open

... reaches 4.65V (typ), the GATE pin is pulled low; the TIMER pull-up current will be turned off and the capacitor is discharged by a 3µA pull-down current. When the TIMER pin falls below 0.65V (typ), the GATE pin turns on again if the RETRY pin is high (if the RETRY pin is low, the UV pin must be puls ...
AnaDev AD7694B, ADC 16-bit 1-ch pseudo-diff 250ksps ser.pdf
AnaDev AD7694B, ADC 16-bit 1-ch pseudo-diff 250ksps ser.pdf

4.7-V to 60-V Input, 50-mA Synchronous Step
4.7-V to 60-V Input, 50-mA Synchronous Step

No Slide Title
No Slide Title

... Example: Use superposition to find the Thevinen and Norton equivalent circuits. ...
Skin Response Meter
Skin Response Meter

... Response of the skin to the passage of a small electric current. The ease with which the current flows between two points on the skin can be used to indicate stress. When a person is tense or emotional, the sweat glands become more active, increasing moisture on the skin; this allows the electric c ...
A Simplified Equivalent Circuit Model of MEMS Electrostatic Actuator
A Simplified Equivalent Circuit Model of MEMS Electrostatic Actuator

TPS40075 数据资料 dataSheet 下载
TPS40075 数据资料 dataSheet 下载

... Inverting input to the error amplifier. In normal operation the voltage on this pin is equal to the internal reference voltage, 0.7 V. ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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