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Aalborg Universitet
Aalborg Universitet

AN4731, Understanding Injection Current on NXP ® Automotive
AN4731, Understanding Injection Current on NXP ® Automotive

... specifications that are allowed for a particular device in terms of maximum voltages on both the power supply pins3 and to the input and output pins, as well as on the maximum currents that can be injected on a pin. Generally, on Freescale's MCUs, protection circuits are included to allow for some i ...
Chapter 4 Electrical Characteristics of CMOS
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...  The inductance produces Ldi/dt noise especially for ground bouncing noise. Note that when CMOS circuit are clocked, the current flow changes greatly di V L dt Advanced Reliable Systems (ARES) Lab. ...
Searching for Patterns in Series and Parallel Circuits
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... 2.3 Combo Circuit - Build a combination circuit. DIAGRAM using half of a page! a. Add an ammeter to measure the TOTAL current. Draw it in the diagram and record the total current next to the ammeter in the diagram. b. Take the ammeter out of the circuit and put it in the circuit again to measure the ...
Analog and Digital Multi
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STK672-640CN-E
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... To reduce noise on the 5V/24V system, be sure to place the GND of C01 in the circuit given above as close as possible to Pin 2 and Pin 6 of the hybrid IC. In addition, in order to set the current accurately, the GND side of RO2 of Vref must be connected to the shared ground terminal used by the Pi ...
Low-Dropout 0.5-A Negative Linear Regulator
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AAT3177 数据资料DataSheet下载
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... An alternative method can be used for flash/torch control that eliminates the need to use the S2Cwire singlewire interface. By using any typical digital I/O port, an additional enable can be created (see Figure 3). ...
Lab1: Resistors
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` = A` + B`
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... equivalent by using truth tables or by using DeMorgan’s law to change (ABC)’ into A’ + B’ + C’, then using the distributive law a few times. ...
EET 114 PowerPoint Slides - Sinclair Community College
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... paths to the transformer will determine the proportion of the return current to flow on the secondary neutral conductor. This secondary neutral current will result in some voltage drop (Vps) across the secondary neutral due to this current (Isn) and its resistance (Rsn). Secondary neutral voltage d ...
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... voltage, peripheral, I/O and memory rails in a processor based system. All three step-down converters enter a low-power mode at light load for maximum efficiency across the widest possible range of load currents. The TPS65021 also integrates two general-purpose 200 mA LDO voltage regulators, which a ...
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ExamView - DC Circuits

... ____ 25. Two resistors of values 6.0 and 12.0  are connected in parallel. This combination in turn is hooked in series with a 4.0- resistor. What is the overall resistance of this combination? a. 0.50  c. 8.0  b. 2.0  d. 22.0  ____ 26. Two resistors of values 6.0 and 12.0  are connected in p ...
COMPOUND CIRCUITS
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Sequential Logic

... 1. R = 0, S = 1. In this case the output of NOR gate GS must be 0 ( Q = 0). Now both inputs of gate GR are 0 and so the output of GR must be 1. So Q = 1 and Q = 0. In this case we say that the flip-flop is SET 2. R = 1, S = 0. In this case the output of NOR gate GR must be 0 (Q = 0). Now both inputs ...
OPA2889
OPA2889

... and simulation. (C) Typical value only for information. Junction temperature = ambient for +25°C tested specifications. Junction temperature = ambient at low temperature limit; junction temperature = ambient +4°C at high temperature limit for over temperature specifications. Current is considered po ...
SN10501 SN10502 SN10503
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... The SN1050x family is a set of rail-to-rail output single, dual, and triple low-voltage, high-output swing, low-distortion high-speed amplifiers ideal for driving data converters, video switching, or low distortion applications. This family of voltage-feedback amplifiers can operate from a single 15 ...
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AD596 数据手册DataSheet 下载

... failure alarm that indicates an open thermocouple lead when operated in the temperature proportional measurement mode. The alarm output has a flexible format which can be used to drive relays, LEDs or TTL logic. The device is packaged in a reliability qualified, cost effective 10-pin metal can or SO ...
LT1789-1/LT1789-10 - Micropower, Single Supply Rail-to-Rail Output Instrumentation Amplifier
LT1789-1/LT1789-10 - Micropower, Single Supply Rail-to-Rail Output Instrumentation Amplifier

... 1kHz Voltage Noise: 48nV/√Hz 0.1Hz to 10Hz Noise: 1.5μVP-P ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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