Evaluates: MAX17005B MAX17005B Evaluation Kit General Description Features
... through MOSFET Q1, as the main power source for the load connected at SYS_LOAD. Once the main AC adapter is selected as the power source, the EV kit circuit monitors the input current through the IINP connector. The input current is defined as the combined system-load current and battery-charge curr ...
... through MOSFET Q1, as the main power source for the load connected at SYS_LOAD. Once the main AC adapter is selected as the power source, the EV kit circuit monitors the input current through the IINP connector. The input current is defined as the combined system-load current and battery-charge curr ...
ADM1175 数据手册DataSheet 下载
... Undervoltage or Overvoltage Input Pin. This pin is active high on the ADM1175-1 and ADM1175-2 and active low on the ADM1175-3 and ADM1175-4. An internal undervoltage comparator has a trip threshold of 1.3 V, and the output of this comparator is used as an enable for the hot swap operation. For the O ...
... Undervoltage or Overvoltage Input Pin. This pin is active high on the ADM1175-1 and ADM1175-2 and active low on the ADM1175-3 and ADM1175-4. An internal undervoltage comparator has a trip threshold of 1.3 V, and the output of this comparator is used as an enable for the hot swap operation. For the O ...
Design of a Self-Correcting Active Pixel Sensor
... Figure 3. Schematic diagram of the pixel column amplifier Where RM6 is the output resistance of the transistor M6. Investigations of the circuit behavior of the redundant pixel have been performed using Spectre simulations for a CMOS 0.35µm process provided by the Canadian Microelectronics Corporati ...
... Figure 3. Schematic diagram of the pixel column amplifier Where RM6 is the output resistance of the transistor M6. Investigations of the circuit behavior of the redundant pixel have been performed using Spectre simulations for a CMOS 0.35µm process provided by the Canadian Microelectronics Corporati ...
Home Work 2 Solution
... L VOV Q = −12V/V. c The MOSFET will be in saturation for v I ranging from 1 V to 1.605 V. If the bias point input is 1.5 V, it allows for only a 0.105 V input sine wave. The amplitude of the output voltage signal that results is approximately equal to V OQ −VOB = 2 V − 0.605 V = 1.39 V. amplitude 1. ...
... L VOV Q = −12V/V. c The MOSFET will be in saturation for v I ranging from 1 V to 1.605 V. If the bias point input is 1.5 V, it allows for only a 0.105 V input sine wave. The amplitude of the output voltage signal that results is approximately equal to V OQ −VOB = 2 V − 0.605 V = 1.39 V. amplitude 1. ...
SIDACtor Capacitance Effects
... low value of resistance and is considered as a localized short circuit between base and emitter. During the manufacturing process, the emitter N+ diffusion is perforated with a series of dots to create these short circuits. On the picture, some of the top metallization has been omitted to show the P ...
... low value of resistance and is considered as a localized short circuit between base and emitter. During the manufacturing process, the emitter N+ diffusion is perforated with a series of dots to create these short circuits. On the picture, some of the top metallization has been omitted to show the P ...
1. COMMON EMITTER TRANSISTOR CHARACTERISTICS
... the operation of SCR is similar to PNPN diode. When IG < 0 the break over voltage required to allow the current through SCR is large. When IG > 0 less amount of break over voltage is sufficient. With very large positive gate currents break over may occur at a very low voltage such that the character ...
... the operation of SCR is similar to PNPN diode. When IG < 0 the break over voltage required to allow the current through SCR is large. When IG > 0 less amount of break over voltage is sufficient. With very large positive gate currents break over may occur at a very low voltage such that the character ...
Digital Integrated Circuits for Communication Design
... during the switching transients) each gate output is connected to either VDD or Vss via a low-resistance path. the outputs of the gates assume at all times the value of the Boolean function implemented by the circuit (ignoring, once again, the transient effects during switching periods). ...
... during the switching transients) each gate output is connected to either VDD or Vss via a low-resistance path. the outputs of the gates assume at all times the value of the Boolean function implemented by the circuit (ignoring, once again, the transient effects during switching periods). ...
02_ELC4345_Fall2013_Diode_Bridge_Rectifier
... G. Plot Measured %Vripple for Steps A, C, and D. Put %Vripple on the vertical axis, and Pdc on the horizontal axis. H. Plot Theoretical %Vripple for Steps A, C, and D. Use (5) with the measured values of Vpeak and P (i.e., P = Vdc • Idc). Superimpose the results of (5) on the plot from Step G. I. Me ...
... G. Plot Measured %Vripple for Steps A, C, and D. Put %Vripple on the vertical axis, and Pdc on the horizontal axis. H. Plot Theoretical %Vripple for Steps A, C, and D. Use (5) with the measured values of Vpeak and P (i.e., P = Vdc • Idc). Superimpose the results of (5) on the plot from Step G. I. Me ...
AN1625
... Both bulk electrolytic and high frequency bypass capacitors have to be connected with short tracks to VSA, VSB and GND. On the L6235 GND pins are the Logic GND, since only the quiescent current flows through them. Logic GND and Power GND should be connected together in a single point, the bulk capac ...
... Both bulk electrolytic and high frequency bypass capacitors have to be connected with short tracks to VSA, VSB and GND. On the L6235 GND pins are the Logic GND, since only the quiescent current flows through them. Logic GND and Power GND should be connected together in a single point, the bulk capac ...
ADM1172 数据手册DataSheet 下载
... actively limited to 50 mV/RSENSE for the circuit breaker timer limit. The ADM1172-1 automatically retries after a current limit fault and the ADM1172-2 latches off. The retry duty cycle on the ADM1172-1 timer function is limited to 3.8% for FET ...
... actively limited to 50 mV/RSENSE for the circuit breaker timer limit. The ADM1172-1 automatically retries after a current limit fault and the ADM1172-2 latches off. The retry duty cycle on the ADM1172-1 timer function is limited to 3.8% for FET ...
MAX8808X/MAX8808Y/MAX8808Z 1A Linear Li+ Battery Chargers with Integrated Pass General Description
... MAX8808X/MAX8808Y/MAX8808Z integrate the current-sense circuit, MOS pass element, and thermal-regulation circuitry, and eliminate the reverse-blocking Schottky diode to create the simplest and smallest charging solution for handheld equipment. The MAX8808X functions as a stand-alone charger to contr ...
... MAX8808X/MAX8808Y/MAX8808Z integrate the current-sense circuit, MOS pass element, and thermal-regulation circuitry, and eliminate the reverse-blocking Schottky diode to create the simplest and smallest charging solution for handheld equipment. The MAX8808X functions as a stand-alone charger to contr ...
IA3514061413
... Fig. 9. Inductor current sampling schemes in the interleaving operation. (a) Two-phase interleaving. (b) Three-phase interleaving. It is very important to understand the dynamics of the SSICC. Generally, it is necessary to understand the relay response time such as how much time it takes for a relay ...
... Fig. 9. Inductor current sampling schemes in the interleaving operation. (a) Two-phase interleaving. (b) Three-phase interleaving. It is very important to understand the dynamics of the SSICC. Generally, it is necessary to understand the relay response time such as how much time it takes for a relay ...
LTC1151 - Dual ±15V Zero-Drift Operational Amplifier
... solder, and even copper wire are all candidates for thermal EMF generation. Junctions of copper wire from different manufacturers can generate thermal EMFs of 200nV/°C; four times the maximum drift specification of the LTC1151. Minimizing thermal EMF-induced errors is possible if judicious attention ...
... solder, and even copper wire are all candidates for thermal EMF generation. Junctions of copper wire from different manufacturers can generate thermal EMFs of 200nV/°C; four times the maximum drift specification of the LTC1151. Minimizing thermal EMF-induced errors is possible if judicious attention ...
ADR1581 数据手册DataSheet 下载
... The ADR1581 uses the band gap concept to produce a stable, low temperature coefficient voltage reference suitable for high accuracy data acquisition components and systems. The device makes use of the underlying physical nature of a silicon transistor base emitter voltage in the forward-biased opera ...
... The ADR1581 uses the band gap concept to produce a stable, low temperature coefficient voltage reference suitable for high accuracy data acquisition components and systems. The device makes use of the underlying physical nature of a silicon transistor base emitter voltage in the forward-biased opera ...
Transistor current sources
... very large but this implies that, for a specified current, the voltage source must be very large. Thus, efficiency is low (due to power loss in the resistor) and it is usually impractical to construct a 'good' current source this way. Nonetheless, it is often the case that such a circuit will provid ...
... very large but this implies that, for a specified current, the voltage source must be very large. Thus, efficiency is low (due to power loss in the resistor) and it is usually impractical to construct a 'good' current source this way. Nonetheless, it is often the case that such a circuit will provid ...
TRIAC
TRIAC, from triode for alternating current, is a genericized tradename for an electronic component that can conduct current in either direction when it is triggered (turned on), and is formally called a bidirectional triode thyristor or bilateral triode thyristor.TRIACs are a subset of thyristors and are closely related to silicon controlled rectifiers (SCR). However, unlike SCRs, which are unidirectional devices (that is, they can conduct current only in one direction), TRIACs are bidirectional and so allow current in either direction. Another difference from SCRs is that TRIAC current can be enabled by either a positive or negative current applied to its gate electrode, whereas SCRs can be triggered only by positive current into the gate. To create a triggering current, a positive or negative voltage has to be applied to the gate with respect to the MT1 terminal (otherwise known as A1).Once triggered, the device continues to conduct until the current drops below a certain threshold called the holding current.The bidirectionality makes TRIACs very convenient switches for alternating-current (AC) circuits, also allowing them to control very large power flows with milliampere-scale gate currents. In addition, applying a trigger pulse at a controlled phase angle in an AC cycle allows control of the percentage of current that flows through the TRIAC to the load (phase control), which is commonly used, for example, in controlling the speed of low-power induction motors, in dimming lamps, and in controlling AC heating resistors.