Thermometer using a Thermistor with TWR-MCF51JF
... 5.3 Thermometer functions . . . . . . . . . . . . . . . . . . . . . . 5.4 Macros and variables . . . . . . . . . . . . . . . . . . . . . . . ...
... 5.3 Thermometer functions . . . . . . . . . . . . . . . . . . . . . . 5.4 Macros and variables . . . . . . . . . . . . . . . . . . . . . . . ...
ADS1202 数据资料 dataSheet 下载
... The ADS1203 is a delta-sigma (∆Σ) modulator with a 95dB dynamic range, operating from a single +5V supply. The differential inputs are ideal for direct connection to transducers or low-level signals. With the appropriate digital filter and modulator rate, the device can be used to achieve 16-bit ana ...
... The ADS1203 is a delta-sigma (∆Σ) modulator with a 95dB dynamic range, operating from a single +5V supply. The differential inputs are ideal for direct connection to transducers or low-level signals. With the appropriate digital filter and modulator rate, the device can be used to achieve 16-bit ana ...
Transient Analysis
... the initial calculated values at time t ¼ 0. For every time step, the node voltages and currents are calculated and compared to the previous time step DC solution. Only when the difference between two DC solutions falls within a specified tolerance (accuracy) will the analysis move on to the next in ...
... the initial calculated values at time t ¼ 0. For every time step, the node voltages and currents are calculated and compared to the previous time step DC solution. Only when the difference between two DC solutions falls within a specified tolerance (accuracy) will the analysis move on to the next in ...
eng paper 1
... (2) the current passing through the consumer device. (ii) What is the potential drop across the cable? (iii) Determine the voltage between terminals X and Y. (iv) If the transformer is 100% efficient, find (1) the power input to the primary coil of the transformer, and (2) the turn ratio of the tran ...
... (2) the current passing through the consumer device. (ii) What is the potential drop across the cable? (iii) Determine the voltage between terminals X and Y. (iv) If the transformer is 100% efficient, find (1) the power input to the primary coil of the transformer, and (2) the turn ratio of the tran ...
NX3P1108 1. General description Logic controlled high-side power switch
... The NX3P1108 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 1.5 A of continuous current. It has an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 0.9 V to 3.6 V, it is used in ...
... The NX3P1108 is a high-side load switch which features a low ON resistance P-channel MOSFET that supports more than 1.5 A of continuous current. It has an integrated output discharge resistor to discharge the output capacitance when disabled. Designed for operation from 0.9 V to 3.6 V, it is used in ...
Thesis Report
... Power semiconductors are the heart of power electronics equipment. “Snubber” is the term used to describe a device consisting of a resistor and a capacitor connected in series. It is intended to be connected in parallel with the contacts of a switch or a relay to reduce arcing. Snubbers are frequent ...
... Power semiconductors are the heart of power electronics equipment. “Snubber” is the term used to describe a device consisting of a resistor and a capacitor connected in series. It is intended to be connected in parallel with the contacts of a switch or a relay to reduce arcing. Snubbers are frequent ...
PRODUCT HANDBOOK
... experienced. Excessive overvoltage can damage MOV based SPDs although all Novaris surge diverters are housed in metal enclosures and meet the fail-safe requirements of UL1449 - specifically package rupture and the effects of excessive heating. Novaris manufactures surge diverters to suit all applica ...
... experienced. Excessive overvoltage can damage MOV based SPDs although all Novaris surge diverters are housed in metal enclosures and meet the fail-safe requirements of UL1449 - specifically package rupture and the effects of excessive heating. Novaris manufactures surge diverters to suit all applica ...
LTM8029 - 36VIN, 600mA Step-Down μModule Converter with 5μA Quiescent Current
... that is off when the output is in regulation, allowing an external resistor to pull the PGOOD pin high. Power good is valid when the LTM8029 is enabled and VIN is above 4.5V. The LTM8029 features the ability to skip the off-time in switching cycles when the input voltage approaches the target output ...
... that is off when the output is in regulation, allowing an external resistor to pull the PGOOD pin high. Power good is valid when the LTM8029 is enabled and VIN is above 4.5V. The LTM8029 features the ability to skip the off-time in switching cycles when the input voltage approaches the target output ...
Ten
... “Why are extremely low absolute TCR resistors required?” is a proper question when evaluating the performance and cost of a system. The answers are as numerous as the systems in which they are installed. The following pages discuss ten different individual technical characteristics of the Bulk Metal ...
... “Why are extremely low absolute TCR resistors required?” is a proper question when evaluating the performance and cost of a system. The answers are as numerous as the systems in which they are installed. The following pages discuss ten different individual technical characteristics of the Bulk Metal ...
by Submitted in partial fulfilment of the requirements for the degree
... amplitude and oscillation frequency. To the knowledge of this author, few published journal articles have focused on amplitude control techniques to reduce frequency drift. This dissertation focuses on reducing the frequency drift resulting from temperature variations based on amplitude control. A c ...
... amplitude and oscillation frequency. To the knowledge of this author, few published journal articles have focused on amplitude control techniques to reduce frequency drift. This dissertation focuses on reducing the frequency drift resulting from temperature variations based on amplitude control. A c ...
System Power Management for Mobile Handset MAX8939/MAX8939A/MAX8939B General Description
... Note 1: LX1 has internal clamp diodes to PGND1 and OUT1. LX2 has internal clamp diodes to PGND2 and OUT2. Applications that forward bias these diodes should take care not to exceed the IC package power dissipation limit. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permane ...
... Note 1: LX1 has internal clamp diodes to PGND1 and OUT1. LX2 has internal clamp diodes to PGND2 and OUT2. Applications that forward bias these diodes should take care not to exceed the IC package power dissipation limit. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permane ...
LOW VOLTAGE TEMPERATURE SENSOR DESIGN FOR ON-CHIP THERMAL MANAGEMENT by
... As the integration density and power density of modern very-large-scaleintegrated (VLSI) circuits keep increasing, on-chip overheating issue is causing performance degrading and even function failures. Thermal management system is therefore integrated on-chip, where a temperature sensor is the most ...
... As the integration density and power density of modern very-large-scaleintegrated (VLSI) circuits keep increasing, on-chip overheating issue is causing performance degrading and even function failures. Thermal management system is therefore integrated on-chip, where a temperature sensor is the most ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.