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... Note 1: LX1 has internal clamp diodes to PGND1 and OUT1. LX2 has internal clamp diodes to PGND2 and OUT2. Applications that forward bias these diodes should take care not to exceed the IC package power dissipation limit. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permane ...
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... thermoelectric cooler (TEC) modules. Both devices utilize direct current control to eliminate current surges in the TEC. On-chip FETs minimize external components while providing high efficiency. A 500kHz/1MHz switching frequency and a unique ripple cancellation scheme reduce component size and nois ...
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... coupling capacitance effectively doubles – Miller effect ƒ If A switches in same direction while B switches, coupling capacitance disappears ƒ These effects can lead to large variance in possible delay of B driver, possibly factor of 5 or 6 between best and worst case ...
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... When a current flows, the charges are not in equilibrium. In that case, the electric field provides the force needed for the charge flow. 2 ∙ A physics professor has assembled his class at the baggage-claim carousel of the local airport to demonstrate an analog of electrical current. “Think of each ...
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... responsivity, the incident light wavelength should be spectrally matched to the operating region of the wavelengths of the detectors. The sensitivity of the detector is also influenced by the amount of photons received. By widening the photon reception window, the sensitivity can be increased. Howev ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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