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Highly Linear 2.45 GHz Low-Noise Amplifier Design LiU-ITN-TEK-A-15/042-SE
Highly Linear 2.45 GHz Low-Noise Amplifier Design LiU-ITN-TEK-A-15/042-SE

... One critical component of the communication receiver of front-end system is the low-noise amplifier (LNA). For good sensitivity and dynamic range, the LNA should provide a low noise figure and maximum attainable power gain. Another concern is the linearity of the LNA. Strong signals produce intermod ...
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... information that was present on the I inputs a setup time preceding the HIGH-to-LOW transition on LEn. The 3-STATE outputs are controlled by the Output Enable (OEn) input. When OEn is LOW the standard outputs are in the 2-state mode. When OEn is HIGH, the standard outputs are in the high impedance m ...
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... This general purpose switch is comprised of two symmetric RF ports and has exceptional port to port isolation up to 6 GHz. An integrated CMOS decoder facilitates a two-pin low voltage CMOS control interface. In addition, no external blocking capacitors are required if 0 VDC is present on the RF port ...
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... Integrated Comparators The MAX4855 dual, single-pole/double-throw (SPDT) switch operates from a single +2V to +5.5V supply and features rail-to-rail signal handling. The MAX4855 has low on-resistance (0.75Ω) with a +3V supply making it ideal for audio switching applications in portable devices. The ...
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... way of thinking, wide knowledge and wonderful guidance give me significant help to understand and improve my thesis, without their help, it is impossible to finish this work. I would like to give my warm and sincere gratitude the supervisor Dan Kuylenstierna, PhD, in the department of MC2 in Chalmer ...
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... effect is a tendency to cancel each other. Hence, in a circuit containing both inductances and capacitances, the net Reactance (X) will be equal to the difference between the values of the inductive and capacitive reactances. The net Reactance (X) will be inductive if XL > XC and capacitive if XC > ...
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... current DC links and Flexible Alternating Current Transmission System devices, FACTS, such as Unified Power Flow Controllers, UPFC, thyristor controlled phase angle regulators and interphase power flow controllers. Because they are simpler and less expensive to build, AC controllers are more common ...
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... statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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