Evaluation of device of merit in microwave switching circuit design. Pibultip, Pitak.
... microwave switching circuit design, a switching- semiconductor of merit can be defined and used as the measure of device switching effectiveness. In ...
... microwave switching circuit design, a switching- semiconductor of merit can be defined and used as the measure of device switching effectiveness. In ...
73S8014R Smart Card Interface DATA SHEET
... circuit, firmware compatible with 8024-type devices for configurations where only asynchronous cards must be supported. It is derived from the 73S8024RN industrystandard electrical interface. The 73S8014R has been optimized to match most of the typical Set-Top-Box / A/V Conditional Access applicatio ...
... circuit, firmware compatible with 8024-type devices for configurations where only asynchronous cards must be supported. It is derived from the 73S8024RN industrystandard electrical interface. The 73S8014R has been optimized to match most of the typical Set-Top-Box / A/V Conditional Access applicatio ...
On the selection and installation of surge protection devices in a TT
... The annual property damage due to lightning and switching transients in a small developing country such as Sri Lanka, exceeds 2.5 million USD. Out of these losses, 75% is due to the damaged electrical and electronic systems (unpublished data of a survey done in Sri Lanka). In the other extreme, in U ...
... The annual property damage due to lightning and switching transients in a small developing country such as Sri Lanka, exceeds 2.5 million USD. Out of these losses, 75% is due to the damaged electrical and electronic systems (unpublished data of a survey done in Sri Lanka). In the other extreme, in U ...
Data Sheet - Avago Technologies
... Figure 4 shows the “worst-case” drive current of about 43 mA for reaching a distance of about 2000 meters. Figure 9 shows the transmitter forward voltage of about VF = 1.62 V. If the typical circuit configuration (Figure 2) is used at Vcc = 5.0 V, the resistor value “R1” should be choosen to 78.6 Ω ...
... Figure 4 shows the “worst-case” drive current of about 43 mA for reaching a distance of about 2000 meters. Figure 9 shows the transmitter forward voltage of about VF = 1.62 V. If the typical circuit configuration (Figure 2) is used at Vcc = 5.0 V, the resistor value “R1” should be choosen to 78.6 Ω ...
AT 121 – Lab 2 – Ohms Law
... An understanding of how resistance affects voltage and current will help you understand and trouble shoot automotive electrical circuits by explaining what values you should get while using a DVOM. This will help you diagnose automotive electrical problems quicker and more accurately. ...
... An understanding of how resistance affects voltage and current will help you understand and trouble shoot automotive electrical circuits by explaining what values you should get while using a DVOM. This will help you diagnose automotive electrical problems quicker and more accurately. ...
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... signals to develop a difference signal which is propor tional to the magnitude of the constant voltage between the probe 18 and test surface 20. This difference signal decreases further to a minimum or null while the capaci also can contain dynamic data because dynamic data tive coupling of electrod ...
... signals to develop a difference signal which is propor tional to the magnitude of the constant voltage between the probe 18 and test surface 20. This difference signal decreases further to a minimum or null while the capaci also can contain dynamic data because dynamic data tive coupling of electrod ...
34 2.8 NOISE 2.8.1 The Nyquist Noise Theorem We now want to
... 2.8.3 How to Handle Multiple Noisy Resistors If we have a network that consists of multiple noisy resistors we find the Thevenin equivalent circuit by using a modified version of superposition. To see this we consider the example of Figure 2-20. In the figure, the left schematic shows two, parallel, ...
... 2.8.3 How to Handle Multiple Noisy Resistors If we have a network that consists of multiple noisy resistors we find the Thevenin equivalent circuit by using a modified version of superposition. To see this we consider the example of Figure 2-20. In the figure, the left schematic shows two, parallel, ...
precision Thin film Technology
... to the amount of material being removed by the laser, allowing successively higher levels of accuracy to be obtained. These features utilize additional substrate area, which sometimes requires trade-offs between cost and performance. One of the features which distinguishes modern thin film technolog ...
... to the amount of material being removed by the laser, allowing successively higher levels of accuracy to be obtained. These features utilize additional substrate area, which sometimes requires trade-offs between cost and performance. One of the features which distinguishes modern thin film technolog ...
High Voltage Engineering
... currents are desirable as the losses and voltage drops due to the conductor resistance are lower. This permits the use of thinner conductors. The use of higher voltages introduces a number of new aspects that have to be taken into account in order to prevent current leakage or flashover due to inade ...
... currents are desirable as the losses and voltage drops due to the conductor resistance are lower. This permits the use of thinner conductors. The use of higher voltages introduces a number of new aspects that have to be taken into account in order to prevent current leakage or flashover due to inade ...
Atmel AT42QT1012 One-channel Toggle-mode QTouch Touch Sensor IC with Power Management Functions
... Increasing Sensitivity In some cases it may be desirable to increase sensitivity; for example, when using the sensor with very thick panels having a low dielectric constant, or when the device is used as a proximity sensor. Sensitivity can often be increased by using a larger electrode or reducing p ...
... Increasing Sensitivity In some cases it may be desirable to increase sensitivity; for example, when using the sensor with very thick panels having a low dielectric constant, or when the device is used as a proximity sensor. Sensitivity can often be increased by using a larger electrode or reducing p ...
±15kV ESD-Protected, Down to 10nA, 3.0V to 5.5V, General Description
... Note 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. Note 2: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device can be exposed to during board-level solder attach and rework. Thi ...
... Note 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. Note 2: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device can be exposed to during board-level solder attach and rework. Thi ...
Electrical Circuits
... Short circuit − A short circuit is a fault in the current path. A short can be: • an unwanted path between two parts of a circuit. • an unwanted path between part of a circuit and ground. • an unwanted current path inside a component. • an unwanted path between two separate circuits. Excessive curre ...
... Short circuit − A short circuit is a fault in the current path. A short can be: • an unwanted path between two parts of a circuit. • an unwanted path between part of a circuit and ground. • an unwanted current path inside a component. • an unwanted path between two separate circuits. Excessive curre ...
Evaluation of Solid-State Crowbars and Gas
... voltage protectors, gas tubes are crowbar devices which have been used for surge suppression in telecommunications applications for many years. They are triggered at relatively low voltages by a gas ionization process similar to that of neon "glow tubes" and cold-cathode displays. When current flow ...
... voltage protectors, gas tubes are crowbar devices which have been used for surge suppression in telecommunications applications for many years. They are triggered at relatively low voltages by a gas ionization process similar to that of neon "glow tubes" and cold-cathode displays. When current flow ...
A MEMS-Based, High-Resolution Electric-Field Meter
... In MEMS-based inertial sensors, such as accelerometers and gyroscopes, known electrical waveforms are applied to a modulating capacitive element to determine an unknown deflection. However, the inverse of this scheme can also be exploited - the capacitive element can be deterministically modulated t ...
... In MEMS-based inertial sensors, such as accelerometers and gyroscopes, known electrical waveforms are applied to a modulating capacitive element to determine an unknown deflection. However, the inverse of this scheme can also be exploited - the capacitive element can be deterministically modulated t ...
WP016: Lightning and surge protection for wind turbines
... tubular steel tower, which is frequently used for large wind turbines, can be regarded as an almost perfect Faraday cage for electromagnetic shielding. In case of concrete hybrid towers, the function of the galvanic cage must be ensured by reinforcing steel as well as earthing and electrical connect ...
... tubular steel tower, which is frequently used for large wind turbines, can be regarded as an almost perfect Faraday cage for electromagnetic shielding. In case of concrete hybrid towers, the function of the galvanic cage must be ensured by reinforcing steel as well as earthing and electrical connect ...
3.0-V TO 20-V PMBus SYNCHRONOUS BUCK CONTROLLER TPS40400 FEATURES APPLICATIONS
... be zero or greater for accurate results. Current sense does not support applications that sink current. Transient voltages (such as ripple) are permitted to go below 0 V, but must be within the specified linear range. ...
... be zero or greater for accurate results. Current sense does not support applications that sink current. Transient voltages (such as ripple) are permitted to go below 0 V, but must be within the specified linear range. ...
Ultralow Distortion IF VGA AD8375
... pin and 80 mA through the two chokes combined. The latter increases with temperature at about 2.5 mA per 10°C. There are two output pins for each polarity and they are oriented in an alternating fashion. When designing the board, care should be taken to minimize the parasitic capacitance due to the ...
... pin and 80 mA through the two chokes combined. The latter increases with temperature at about 2.5 mA per 10°C. There are two output pins for each polarity and they are oriented in an alternating fashion. When designing the board, care should be taken to minimize the parasitic capacitance due to the ...
Sepam Series 20
... This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designated to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment ...
... This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designated to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment ...
12.2 switched-capacitor circuits
... depicted in Fig. 12.8(c). When phase 1 is high, switch S1 is on and S2 is off, and when phase 2 is high, switch S2 is on and S1 is off, assuming the switches are implemented using NMOS transistors. Figure 12.9 gives the (piecewise linear) equivalent circuits that can be used to analyze the circuit ...
... depicted in Fig. 12.8(c). When phase 1 is high, switch S1 is on and S2 is off, and when phase 2 is high, switch S2 is on and S1 is off, assuming the switches are implemented using NMOS transistors. Figure 12.9 gives the (piecewise linear) equivalent circuits that can be used to analyze the circuit ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.