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MAX8860 低噪声、低压差300mA (确保)稳压器,µMAX封装
MAX8860 低噪声、低压差300mA (确保)稳压器,µMAX封装

... this reference to the selected feedback voltage and amplifies the difference. The MOSFET driver reads the error signal and applies the appropriate drive to the Pchannel pass transistor. If the feedback voltage is lower than the reference voltage, the pass-transistor gate is pulled lower, allowing mo ...
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... 1 eV at 50 °C to 0.39 eV at 150 °C. The same effect we could be observed by analyzing our data. The power increases from 2% at 50 °C to 8% at 175 °C and the maximum transconductance increases from 0.2% at 50 °C to 3.6% at 175 °C. In [4] was proposed that the electric field induced defect formation i ...
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... expensive components such as motors, SCR power converters, and bus bars. By keeping the expensive "muscle" components and replacing only the control equipment “brains," your Nidec solution will: • Achieve new system performance • Improve machine uptime • Reduce upgrade downtime • Lower capital mater ...
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... Project 3, and we can certainly decode each of the segments with NAND and NOR gates, but fortunately an integrated circuit (IC) is available that can decode all 7 segments at once. The part number for that IC is 74LS47. The 74LS47 takes a 4-bit binary number as input. (Since we have only 3 bits, we ...
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... amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal. Answer Voltage gain of the first amplifier, V1 = 10 Voltage gain of the second amplifier, V2 = 20 Input signal voltage, Vi = 0.01 V Output AC signal voltage = ...
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... The design and construction of a rat vitals-monitoring system is essential for simultaneously monitoring multiple anesthetized rats. Our client currently runs PET scans on four rats concurrently, and the scans can last up to two hours. During the two hour scans, the rats are under anesthesia and dos ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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